HMC941


Design Assistance

Customised Pack Sizes / Qtys

Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing

Electrical test & trimming
o Waffle Pack
o Gel Pak
o Tape & Reel

Onsite storage, stockholding &
scheduling

100% Visual Inspection
o MIL-STD 883 Condition A
o MIL-STD 883 Condition A

On-site failure analysis

Bespoke 24 Hour monitored
storage systems for secure long
term product support

On-site failure analysis
Contact
[email protected]
For price, delivery and to place orders
HMC941
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HMC941
v00.0910
ATTENUATORS - DIGITAL - CHIP
1
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL
ATTENUATOR, 0.1 - 30 GHz
Typical Applications
Features
The HMC941 is ideal for:
0.5 dB LSB Steps to 15.5 dB
• Fiber Optics & Broadband Telecom
Single Positive Control Line Per Bit
• Microwave Radio & VSAT
±0.5 dB Typical Bit Error
• Military Radios, Radar & ECM
High Input IP3: +45 dBm
• Space Applications
Die Size: 2.29 x 0.95 x 0.1 mm
Functional Diagram
General Description
The HMC941 die is a broadband 5-bit GaAs IC digital attenuator MMIC chip. Covering 0.1 to 30 GHz, the
insertion loss is less than 4 dB typical. The attenuator
bit values are 0.5 (LSB), 1, 2, 4, 8, for a total attenuation of 15.5 dB. Attenuation accuracy is excellent
at less than ± 0.5 dB typical step error with an IIP3 of
+45 dBm. Five control voltage inputs, toggled between
+5V and 0V, are used to select each attenuation state.
Electrical Specifications, TA = +25° C, With Vdd = +5V, Vss = -5V & VCTL = 0/ +5V
Parameter
Frequency (GHz)
Typ.
Max.
Units
0.1 - 18.0 GHz
18.0 - 30.0 GHz
2.5
4.0
3.5
4.8
dB
dB
Attenuation Range
0.1 - 30.0 GHz
15.5
dB
Return Loss (RF1 & RF2, All Atten. States)
0.1 - 30.0 GHz
15
dB
Insertion Loss
Min.
Attenuation Accuracy: (Referenced to Insertion Loss)
0.5 - 7.5 dB States
8 - 15.5 dB States
0.1 - 30.0 GHz
0.1 - 30.0 GHz
± 0.3 + 4% of Atten. Setting Max
± 0.3 + 5% of Atten. Setting Max
Input Power for 0.1 dB Compression
0.1 - 0.5 GHz
0.5 - 30.0 GHz
22
27
dBm
dBm
Input Third Order Intercept Point
(Two-Tone Input Power= 0 dBm Each Tone)
0.1 - 0.5 GHz
0.5 - 30.0 GHz
42
45
dBm
dBm
Switching Characteristics
0.1 - 30.0 GHz
60
90
ns
ns
tRISE, tFALL (10/90% RF)
tON/tOFF (50% CTL to 10/90% RF)
1-1
dB
dB
Idd
0.1 - 30.0 GHz
3
5
7
mA
Iss
0.1 - 30.0 GHz
-4
-6
-8
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC941
v00.0910
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL
ATTENUATOR, 0.1 - 30 GHz
(Only Major States are Shown)
0
INSERTION LOSS (dB)
-2
-3
-4
+25 C
+85 C
-55 C
-5
-6
-5
-10
-15
-20
0
5
10
15
20
25
30
35
40
0
5
10
FREQUENCY (GHz)
15
20
25
30
35
40
30
35
40
30
35
40
FREQUENCY (GHz)
Input Return Loss
Output Return Loss
(Only Major States are Shown)
(Only Major States are Shown)
0
-10
-10
RETURN LOSS (dB)
0
-20
-30
-40
-20
-30
ATTENUATORS - DIGITAL - CHIP
NORMALIZED ATTENUATION (dB)
0
-1
RETURN LOSS (dB)
1
Normalized Attenuation
Insertion Loss vs. Temperature
-40
-50
-50
0
5
10
15
20
25
30
35
40
0
5
10
FREQUENCY (GHz)
15
20
25
FREQUENCY (GHz)
Bit Error vs. Frequency
Bit Error vs. Attenuation State
(Only Major States are Shown)
1.5
1
0.8
1
0.4
BIT ERROR (dB)
BIT ERROR (dB)
0.6
0.2
0
-0.2
-0.4
10 GHz
20 GHz
30 GHz
-0.6
15.5 dB
0.5
0
-0.5
-1
-0.8
-1
-1.5
0
4
8
12
ATTENUATION STATE (dB)
16
0
5
10
15
20
25
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1-2
HMC941
v00.0910
Relative Phase vs. Frequency
Step Attenuation vs. Attenuation State
60
1
50
0.8
STEP ATTENUATION (dB)
RELATIVE PHASE (deg)
(Only Major States are Shown)
40
15.5 dB
30
20
10
0
-10
0.6
0.4
0.2
0
10 GHz
20 GHz
30 GHz
-0.2
0
5
10
15
20
25
30
35
-0.4
40
0
4
FREQUENCY (GHz)
50
IP3 (dBm)
50
40
15.5 dB
40
+25 C
+85 C
-40 C
30
30
20
5
10
15
20
25
30
35
40
20
0.1
1
100
Truth Table
Input Power for 0.1 dB Compression
30
P0.1dB (dBm)
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Control Voltage Input
26
P4
8 dB
P3
4 dB
P2
2 dB
P1
1 dB
P0
0.5 dB
Attenuation
State
RF1 - RF2
22
High
High
High
High
High
Reference I.L.
High
High
High
High
Low
0.5 dB
High
High
High
Low
High
1 dB
High
High
Low
High
High
2 dB
High
Low
High
High
High
4 dB
Low
High
High
High
High
8 dB
Low
Low
Low
Low
Low
15.5 dB
18
14
10
6
0.01
0.1
1
FREQUENCY (GHz)
1-3
16
(Minimum Attenuation State)
60
0
12
Input IP3 vs. Temperature
60
8 dB
8
ATTENUATION STATE (dB)
Input IP3 Over Major Attenuation States
IP3 (dBm)
ATTENUATORS - DIGITAL - CHIP
1
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL
ATTENUATOR, 0.1 - 30 GHz
10
100
Any Combination of the above states will provide an attenuation
approximately equal to the sum of the bits selected.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC941
Absolute Maximum Ratings
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL
ATTENUATOR, 0.1 - 30 GHz
1
Bias Voltages & Currents
RF Input Power (0.5 to 30 GHz)
+27 dBm
Vdd
+5V @ 5 mA
Control Voltage (P0 to P4)
Vdd + 0.5V
Vss
-5V @ 6 mA
Vdd
+7 Vdc
Vss
-7 Vdc
Channel Temperature
150 °C
Thermal Resistance
(channel to die bottom)
146 °C/W
Storage Temperature
-65 to + 150 °C
Operating Temperature
-55 to +85 °C
Control Voltage
State
Bias Condition
Low
0 to 0.8V @ 1 µA
High
2 to 5V @ 1 µA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS).
2. TYPICAL BOND PAD IS .004” SQUARE.
3. TYPICAL BOND PAD SPACING IS .006”
CENTER TO CENTER EXCEPT AS NOTED.
4. BACKSIDE METALIZATION: GOLD
5. BACKSIDE METAL IS GROUND
6. BOND PAD METALIZATION: GOLD
Die Packaging Information
ATTENUATORS - DIGITAL - CHIP
v00.0910
[1]
Standard
Alternate
WP-9 (Waffle Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1-4
HMC941
v00.0910
1
Pad Descriptions
Pad Number
ATTENUATORS - DIGITAL - CHIP
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL
ATTENUATOR, 0.1 - 30 GHz
Function
Description
GND
Die bottom must be connected to RF ground.
1, 9
RF1, RF2
This pad is DC coupled and matched to 50 Ohm. Blocking
capacitors are required if RF line potential is not equal to 0V.
2
Vss
Negative Bias -5V
3-7
P0 - P4
See truth table and control voltage table.
8
Vdd
Positive Bias +5V
Interface Schematic
Assembly Diagram
1-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC941
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL
ATTENUATOR, 0.1 - 30 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
ATTENUATORS - DIGITAL - CHIP
v00.0910
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with
vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1-6