HMC1110


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
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supply formats:
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storage systems for secure long
term product support
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[email protected]
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HMC1110
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HMC1110
v00.1213
FREQUENCY MULTIPLIER - ACTIVE - CHIP
GaAs MMIC X6 ACTIVE FREQUENCY
MULTIPLIER, 71 - 86 GHz
Typical Applications
Features
The HMC1110 is ideal for:
High Output Power: +13 dBm
• Point-to-Point & VSAT Radios
Low Input Power Drive: 0 to +6 dBm
• Test Instrumentation
5Fo Harmonic Isolation: +25 dBc
• Military & Space
7Fo Harmonic Isolation: +40 dBc
• Sensors
Die Size: 2.44 x 1.35 x 0.1 mm
General Description
Functional Diagram
The HMC1110 is a x6 active broadband frequency
multiplier chip utilizing GaAs pHEMT technology.
When driven by a +4 dBm signal, the multiplier
provides +13 dBm typical output power from 71 to
86 GHz. The 5Fo and 7Fo harmonic isolations with
respect to the output signal level are +25 dBc and +40
dBc respectively. The HMC1110 is ideal for use in LO
multiplier chains for Pt-to-Pt & VSAT Radios yielding
reduced parts count by integrating input and output
amplifiers vs. traditional approach which uses discrete
components. All data is taken with the chip connected
via two 0.025mm (1 mil) wire bonds of minimal length
0.31 mm (12 mils).
Electrical Specifications, TA = +25 °C,
VD_AMP1 = VD_AMP2 = 4V, VD_MULT = 1.5V, 4 dBm Drive Level
Parameter
Min.
Frequency Range, Input
Typ.
11.83 - 14.33
Frequency Range, Output
Max.
Units
GHz
71 - 86
GHz
0-6
dBm
13
dBm
5Fo Harmonic Isolation (with respect to the output signal level)
25
dBc
7Fo Harmonic Isolation (with respect to the output signal level)
40
dBc
Input Return Loss
15
dB
Output Return Loss
12
dB
Supply Current (VD_AMP1 + VD_AMP2)
175
mA
Supply Current (VD_MULT)
80
mA
Input Power Drive
Output Power
10
[1] Adjust VG_AMP between -2 to 0V to achieve 175 mA total on VD_AMP1 and VD_AMP2.
[2] Adjust VG_X2, VG_X3 between -2 to 0V to achieve 1 - 2 mA on VD_MULT.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1110
v00.1213
GaAs MMIC X6 ACTIVE FREQUENCY
MULTIPLIER, 71 - 86 GHz
20
15
15
10
5
0
-5
10
5
0
-5
-10
-10
70
72
74
76
78
80
82
84
86
88
70
72
74
OUTPUT FREQUENCY (GHz)
+25C
+85C
80
82
84
86
88
4dBm
6dBm
8dBm
Output Power vs. VD_AMP
Supply Current, VD_AMP = +3V [1]
20
20
15
15
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
78
0dBm
2dBm
-55C
Output Power vs. VD_AMP
Supply Current, VD_AMP = +4V [1]
10
5
0
-5
10
5
0
-5
-10
-10
70
72
74
76
78
80
82
84
86
88
70
72
74
OUTPUT FREQUENCY (GHz)
150 mA
76
78
80
82
84
86
88
OUTPUT FREQUENCY (GHz)
175 mA
200 mA
Output Power vs. VD_MULT
Supply Voltage, VD_AMP = +4V [1]
150 mA
175 mA
200 mA
Output Power vs. VD_MULT
Supply Voltage, VD_AMP = +3V [1]
20
20
15
15
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
76
OUTPUT FREQUENCY (GHz)
10
5
0
-5
FREQUENCY MULTIPLIER - ACTIVE - CHIP
Output Power vs. Drive Level
20
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
Output Power vs. Temperature [1]
10
5
0
-5
-10
-10
70
72
74
76
78
80
82
84
86
OUTPUT FREQUENCY (GHz)
1.5 V
2V
88
70
72
74
76
78
80
82
84
86
88
OUTPUT FREQUENCY (GHz)
2.5 V
1.5 V
2V
2.5 V
[1] Drive Level = +4 dBm
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2
HMC1110
v00.1213
GaAs MMIC X6 ACTIVE FREQUENCY
MULTIPLIER, 71 - 86 GHz
Input Return Loss
Output Return Loss, RF input = 12.5 GHz
OUTPUT RETURN LOSS (dB)
INPUT RETURN LOSS (dB)
0
-5
-10
-15
-20
-25
-4
-8
-12
-16
-20
10
11
12
13
14
15
16
70
72
74
76
FREQUENCY (GHz)
78
80
82
84
86
FREQUENCY (GHz)
DC Power vs. Temperature, Pin = 4dBm
VD_MULT = +1.5V, VD_AMP = +4V
5th & 7th Harmonic Isolation, Pin = 4dBm
VD_MULT = +1.5V, VD_AMP = +4V
1.4
60
1.2
50
1
ISOLATION (dBc)
TOTAL DC POWER (W)
FREQUENCY MULTIPLIER - ACTIVE - CHIP
0
0.8
0.6
0.4
40
30
20
0.2
0
70
72
74
76
78
80
82
84
86
10
11.8
88
12.2
12.6
+25C
13
13.4
13.8
14.2
14.6
INPUT FREQUENCY (GHz)
OUTPUT FREQUENCY (GHz)
+85C
5Fo
-55C
7Fo
5th Harmonic Isolation vs. VD_MULT
Pin = 4dBm, VD_AMP = +4V
45
ISOLATION (dBc)
40
35
30
25
20
15
10
11.8
12.2
12.6
13
13.4
13.8
14.2
14.6
INPUT FREQUENCY (GHz)
1.5V
3
2V
2.5V
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1110
v00.1213
GaAs MMIC X6 ACTIVE FREQUENCY
MULTIPLIER, 71 - 86 GHz
Amplifier Drain Bias Voltage
(VD_AMP)
+4.5 V
Multiplier Drain Bias Voltage
(VD_MULT)
+3V
RF Input Power
+10 dBm
Junction Temperature
146 °C
Channel Temperature
175 °C
Continuous Pdiss (T=85 °C)
(derate=17.21 mW/ °C above 85°C)
1.55 W
Thermal Resistance (RTH)
(junction to die bottom)
58.1 °C/W
Operating Temperature
-55 °C to +85 °C
Storage Temperature
-65 °C to 150 °C
ESD Sensitivity (HBM)
Class 0, passed 150V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
FREQUENCY MULTIPLIER - ACTIVE - CHIP
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS 0.0051” [3.303] SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4
HMC1110
v00.1213
GaAs MMIC X6 ACTIVE FREQUENCY
MULTIPLIER, 71 - 86 GHz
FREQUENCY MULTIPLIER - ACTIVE - CHIP
Pad Descriptions
5
Pad Number
Function
Description
1, 3, 4, 6, 8, 10,
12, 13, 15, 17, 18
GND
Ground pads must be connected to RF/DC ground.
2
LO_IN
This pin is DC coupled
and matched to 50 Ohms.
5
VD_MULT
Supply voltage for multiplier. External bypass capacitors of 100 pF,
0.01 µF and 4.7 µF are recommended.
7, 11
VD_AMP1,
VD_AMP2
Supply voltage for input and output amplifiers. External bypass
capacitors of 100 pF, 0.01µF and 4.7 µF are recommended.
9
VG_AMP
Gate control for amplifier. External bypass capacitors of 100pF,
0.01µF and 4.7µF are required. Adjust VG_AMP between -2 to 0V
to achieve 175 mA total on VD_AMP1 and VD_AMP2.
16, 19
VG_X2, VG_X3
Gate control for multiplier. External bypass capacitors of 100 pF,
0.01 µF and 4.7 µF are recommended. Adjust VG_X2, VG_X3
between -2 to 0V to achieve 1 - 2 mA on VD_MULT.
14
LO_OUT
This pin is AC coupled
and matched to 50 Ohms.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Pin Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1110
v00.1213
GaAs MMIC X6 ACTIVE FREQUENCY
MULTIPLIER, 71 - 86 GHz
FREQUENCY MULTIPLIER - ACTIVE - CHIP
Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
6
HMC1110
v00.1213
GaAs MMIC X6 ACTIVE FREQUENCY
MULTIPLIER, 71 - 86 GHz
FREQUENCY MULTIPLIER - ACTIVE - CHIP
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 150V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched
with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started
on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
7
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1110
v00.1213
GaAs MMIC X6 ACTIVE FREQUENCY
MULTIPLIER, 71 - 86 GHz
FREQUENCY MULTIPLIER - ACTIVE - CHIP
Notes
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8