ROHM FMN1_11

Data Sheet
Switching Diode
FMN1
Dimensions (Unit : mm)
Applications
Ultra high speed switching
Land size figure (Unit : mm)
2.9±0.2
+0.1
Each lead has same dimension
0.3 -0.05各リードとも同寸法
Features
1) Small mold type. (SMD5)
2) High reliability.
0.45 0.35
0.35 0.45
0.6
+0.2
-0.1
(2)
0.95 0.95
1.6
2.8±0.2
(1)
0.15±0.1
0.06
2.4
1.0MIN.
0.8MIN.
(5)
(4)
(3)
0.8±0.1
1.9±0.2
0.95
Construction
Silicon epitaxial planar
0.3~0.6
0~0.1
1.9
SMD5
1.1±0.2
0.1
0.95
Structure
ROHM : SMD5
JEITA : SC-74A
week code
Taping specifications (Unit : mm)
φ1.5±0.1
0
2.0±0.05
0.3±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
IFM
Forward current (Single)
Average rectified forward current (Single)
Io
Isurge
Surge current (t=1us)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
φ1.0MIN
4.0±0.1
3.2±0.1
Limits
3.2±0.1
8.0±0.2
5.5±0.2
0~0.5
3.2±0.1
3.5±0.05
1.75±0.1
4.0±0.1
1.35±0.1
Unit
V
V
mA
mA
mA
mW
°C
°C
80
80
80
25
250
80
150
55 to 150
Min.
Typ.
Max.
Unit
Conditions
IF=5mA
-
-
0.9
V
IR
-
-
0.1
μA
VR=70V
Ct
-
-
3.5
pF
trr
-
-
4
ns
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50
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© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 - Rev.C
100
100000
Ta=150℃
Ta=150℃
Ta=25℃
Ta=-25℃
1
1000
Ta=75℃
100
Ta=25℃
10
Ta=-25℃
1
0.1
0.01
0.1
200
300
400
500
600
700
800
0.1
0
900 1000
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
20 30 40 50 60 70
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0
680
AVE:682.7mV
70
60
50
40
30
AVE:7.689nA
20
6
5
4
3
AVE:1.039pF
2
1
0
Ct DISPERSION MAP
IR DISPERSION MAP
8.3ms
10
AVE:2.50A
5
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
9
REVERSE RECOVERY TIME:trr(ns)
1cyc
15
5
7
0
10
Ifsm
8
10
VF DISPERSION MAP
20
8
7
6
5
4
3
AVE:1.26ns
2
1
0
0
Ifsm
4
8.3ms 8.3ms
1cyc
3
2
1
0
1
IFSM DISPERSION MAP
trr DISPERSION MAP
t
10
1
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
Rth(j-c)
100
Mounted on epoxy board
IM=1mA
1ms
IF=10mA
time
8
7
6
5
3
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
AVE:0.57kV
2
0
0.01
AVE:2.06kV
4
1
300us
10
0.001
100
9
Rth(j-a)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
1000
100
20
Ta=25℃
VR=6V
f=1MHz
n=10pcs
9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
690
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
80
660
PEAK SURGE
FORWARD CURRENT:IFSM(A)
80
Ta=25℃
VR=70V
n=10pcs
90
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
Ta=25℃
IF=5mA
n=30pcs
700
670
10
100
710
1
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
0
10
Ta=125℃
10000
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
Ta=75℃
10
Data Sheet
FMN11
1000
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.06 - Rev.C
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Notes
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R1120A