ROHM DAN222WM

Data Sheet
Switching Diode
DAN222WM
lApplications
High frequency switching
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
lFeatures
1)Ultra small mold type. (EMD3)
2)High reliability
1.3
0.7
1.0
0.5 0.5
0.7
0.7
1N
0.6
0.6
EMD3
lConstruction
Silicon epitaxial planer
lStructure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
IFM
Forward voltage(repetitive peak)
Average rectified forward current
Io
Isurge
Surge current(t=1s)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Limits
80
80
300
100
4
150
150
Unit
V
V
mA
mA
A
mW
C
C
-55 to +150
Min.
Typ.
Max.
Unit
-
-
1.2
V
IF=100mA
Conditions
Reverse current
Capacitance between terminals
IR
-
-
0.1
μA
VR=70V
Ct
-
-
3.5
pF
Reverse recovery time
trr
-
-
4
ns
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50Ω
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.10 - Rev.A
Data Sheet
DAN222WM
100
10000
Ta=125°C
10
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
1000
Ta=125°C
1
Ta=75°C
Ta=25°C
0.1
Ta=-25°C
Ta=75°C
100
Ta=25°C
10
1
Ta=-25°C
0.1
0.01
0.01
0
0.5
1
0
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
20
40
60
80
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
f=1MHz
f=1MHz
VR=6V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0.9
1
0.7
AVE:0.52pF
0.5
0.3
0.1
0.1
0
10
20
30
Ct DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
50
Ta=25°C
IF=100mA
n=30pcs
940
930
920
AVE:905.0 mV
45
Ta=25°C
VR=70V
n=30pcs
40
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
950
35
30
25
20
15
AVE:8.1nA
10
910
5
0
900
IR DISPERSION MAP
VF DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.10 - Rev.A
30
1000
Ta=25°C
IF=100mA
IR=100mA
Irr=0.1*IR
n=10pcs
25
AVE:19.0ns
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
REVERSE RECOVERY TIME:trr(ns)
Data Sheet
DAN222WM
20
15
10
5
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
10
0.001
0
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
trr DISPERSION MAP
100
20
PEAK SURGE
FORWARD CURRENT:IFSM(A)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
n=10pcs
15
AVE: 8.0kV
10
AVE: 1.6kV
5
0
IFSM
t
10
1
C=200pF
R=0Ω
0.1
C=100pF
R=1.5kΩ
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
ESD DISPERSION MAP
5
5
IFSM
IFSM
4
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1
8.3m 8.3ms
s
1cyc
3
2
1
4
8.3ms
1cyc
3
2
AVE:2.5A
1
0
0
1
10
100
IFSM DISPERSION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.10 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A