ROHM RB095T

Data Sheet
Schottky barrier diode
RB095T-60
Applications
Switching power supply
Dimensions (Unit : mm)
Structure
Features
1) Cathode common type.
(TO-220)
2) Low IR
(1) (2) (3)
3) High reliability
6
Construction
Silicon epitaxial planer
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive)
Reverse voltage(DC)
Average rectified forward current (*1)
Fprward current surge peak (60Hz / 1cyc)
Junction temperature
Storage temperature
Limits
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Unit
V
V
A
A
60
60
6
100
150
40 to 150
C
C
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130C
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
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Symbol
VF
Typ.
-
Max.
0.58
300
Unit
V
IR
Min.
-
jc
-
-
3.0
C/W
1/3
A
Conditions
IF=3A
VR=60V
junction to case
2011.04 - Rev.D
Data Sheet
RB095T-60
Electrical characteristic curves
1000000
REVERSE CURRENT:IR(uA)
Ta=25°C
Ta=75C
Ta=-25°C
0.1
10000
Ta=75C
1000
100
Ta=25C
10
Ta=-25C
1
100
10
0.1
0.01
0.01
0
100
200
300
400
500
600
700
0
800
10
20
30
40
50
1
60
0
200
550
Ta=25C
IF=3A
n=30pcs
530
AVE:532.4mV
520
510
160
140
120
100
80
60
AVE:20.8uA
40
650
550
500
450
400
150
AVE:73.0A
100
50
1000
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
10
AVE:8.30ns
5
8.3ms
1
IF=3A
100
10
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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100
1ms
10
time
Rth(j-a)
300us
Rth(j-c)
1
0.1
0.001
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
IM=100mA
t
100
10
100
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISPERSION MAP
1000
8.3ms
1cyc
10
0
1
Ifsm
100
15
0
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Ct DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I FSM(A)
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
8.3ms
200
AVE:514.4pF
300
30
1cyc
30
600
IR DISPERSION MAP
Ifsm
25
Ta=25C
f=1MHz
VR=0V
n=10pcs
350
VF DISPERSION MAP
250
20
700
0
300
15
750
20
500
10
800
Ta=25C
VR=60V
n=30pcs
180
REVERSE CURRENT:IR(uA)
540
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE : V F(mV)
f=1MHz
Ta=125°C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
FORWARD CURRENT:I F(A)
Ta=125C
1
1000
Ta=150°C
100000
Ta=150°C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
D=1/2
DC
5
Sin(θ=180)
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2011.04 - Rev.D
Data Sheet
RB095T-60
15
15
Io
0A
10
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0V
Sin(θ=180)
D=1/2
5
DC
DC
T
10
D=t/T
VR=30V
Tj=150℃
D=1/2
5
Sin(θ =180)
0
10
20
30
40
50
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
60
Io
0V
VR
t
DC
10
T
D=t/T
VR=30V
Tj=150℃
D=1/2
5
Sin(θ =180)
0
0
0
0A
VR
t
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
15
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(℃)
Derating Curve"(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve"(Io-Tc)
30
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
No break at 30kV
25
20
AVE:12.7kV
15
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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3/3
2011.04 - Rev.D
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Notes
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R1120A