100mA / 50V Digital transistors (with built-in resistors) DTC124EM / DTC124EE / DTC124EUA / DTC124EKA Applications Inverter, Interface, Driver Dimensions (Unit : mm) DTC124EM 0.2 1.2 0.32 0.8 1.2 (3) (1)(2) 0.22 0.2 Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on / off conditions need to be set for operation, making the device design easy. 0.4 0.4 0.13 0.5 (1) IN (2) GND (3) OUT 0.8 ROHM : VMT3 Abbreviated symbol : 25 DTC124EE 0.7 1.6 0.55 0.3 (2) 0.2 UMT3 DTC124EUA SMT3 Taping Taping Taping Taping Code T2L TL T106 T146 Basic ordering unit (pieces) 8000 3000 3000 3000 − − − − − 2.0 0.9 − DTC124EE DTC124EUA − − DTC124EKA − − 0.7 (3) (1) (2) DTC124EM 0.2 0.3 2.1 EMT3 1.25 VMT3 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 − − 0.15 1.3 Abbreviated symbol : 25 DTC124EKA (1) GND (2) IN (3) OUT 1.1 2.9 0.4 Inner circuit 0.1Min. Type (1) GND (2) IN (3) OUT 1.0 Abbreviated symbol : 25 Packaging specifications Packaging type 0.15 0.5 0.5 ROHM : EMT3 Package (1) 0.2 0.1Min. Structure NPN epitaxial planar silicon transistor (Resistor built-in type) 1.6 0.8 (3) 0.8 1.6 2.8 (3) OUT (2) R2 (1) 0.95 0.95 0.15 ROHM : SMT3 EIAJ : SC-59 GND 1.9 0.3Min. R1 IN (1) GND (2) IN (3) OUT Abbreviated symbol : 25 OUT IN GND R1=R2=22kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.B DTC124EM / DTC124EE / DTC124EUA / DTC124EKA Data Sheet Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit DTC124EM DTC124EE DTC124EUA DTC124EKA Supply voltage VCC 50 V Input voltage VIN −10 to +40 V IO 30 IC(Max.) 100 Output current mA Power dissipation Pd Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 150 200 mW Electrical characteristics (Ta=25C) Parameter Input voltage Output voltage Symbol Min. Typ. Max. VI(off) − − 0.5 VI(on) 3 − − VO(on) − 0.1 0.3 V II − − 0.36 mA VI=5V Input current Unit Conditions VCC=5V, IO=100μA V VO=0.2V, IO=5mA IO/II=10mA/0.5mA IO(off) − − 0.5 μA VCC=50V, VI=0V DC current gain GI 56 − − − VO=5V, IO=5mA Input resistance R1 15.4 22 28.6 kΩ Resistance ratio R2/R1 0.8 1 1.2 − − 250 − MHz Output current fT ∗ Transition frequency − − VCE=10V, IE=−5mA, f=100MHz ∗ Characteristics of built-in transistor Electrical characteristic curves 10m 5m VO=0.2V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1 1k VCC=5V 2m 1m 500μ VO=5V 500 DC CURRENT GAIN : GI 100 Ta=100°C 25°C −40°C 200μ 100μ 50μ 20μ 10μ Ta=100°C 25°C −40°C 200 100 50 20 10 5 5μ 2μ 1μ 0 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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