High-reliability discrete products and engineering services since 1977 1N5059-1N5062 STANDARD AVALANCHE DIODE FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Parameter Test condition Sub type Symbol Value 1N5059 1N5060 Reverse voltage = repetitive peak reverse voltage 400 VR = VRRM 1N5061 Average forward current 800 tp = 10ms, half sinewave IFSM RthJA = 45 K/W, Tamb = 50°C Junction ambient 50 I(BR)R = 1 A, inductive load Lead length l = 10mm, TL = constant A 2 IFAV RthJA = 100 K/W, Tamb = 75°C Junction and storage temperature range Maximum pulse energy in avalanche mode, non repetitive (inductive load switch off) V 600 1N5062 Peak forward surge current Unit 200 A 0.8 TJ, Tstg -55 to +175 °C ER 20 mJ 45 RthJA On PC board with spacing 25 mm K/W 100 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Forward voltage Test condition Sub type IF = 1A Symbol Min Typ 1 VF IF = 2.5A 1.15 VR = VRRM Reverse current Diode capacitance µA 10 1N5060 1N5061 225 V(BR)R 1N5062 Reverse recovery time V 100 1N5059 IR = 100µA Unit 1 IR VR = VRRM, TJ = 100°C VR = VRRM, TJ = 150°C Reverse breakdown voltage Max 450 1600 650 V 900 IF = 0.5A, IR = 1A, IR = 0.25A trr VR = 0 V, f = 1 MHz CD 4 40 µs pF Rev. 20100122 High-reliability discrete products and engineering services since 1977 1N5059-1N5062 STANDARD AVALANCHE DIODE MECHANICAL CHARACTERISTICS Case SOD-57 Marking Body painted, alpha numeric Polarity Cathode band Rev. 20100122 High-reliability discrete products and engineering services since 1977 1N5059-1N5062 STANDARD AVALANCHE DIODE Rev. 20100122