2N6116-2N6118 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Symbol Value Unit Repetitive peak forward current 100µs pulse width, 1.0% duty cycle 20µs pulse width, 1.0% duty cycle Rating ITRM 1.0 2.0 Amp Non repetitive peak forward current 10µs pulse width ITSM Amp 5.0 DC forward anode current Derate above 25°C IT 200 2.0 mA mA/°C DC gate current IG ±20 mA Gate to cathode forward voltage VGKF 40 Volt Gate to cathode reverse voltage VGKR 5.0 Volt Gate to anode reverse voltage VGAR 40 Volt Anode to cathode voltage VAK ±40 Volt Forward power dissipation @ TA = 25°C Derate above 25°C PF 1/ӨJA 250 2.5 mW mW/°C Operating junction temperature range TJ -55 to 125 °C Storage temperature range Tstg -65 to 200 °C ELECTRICAL CHARACTERSITICS (TA = 25°C unless otherwise specified) Characteristic Offset voltage (VS = 10Vdc, RG = 1.0MΩ) (VS = 10Vdc, RG = 10kΩ) Symbol 2N6116 2N6117 2N6118 All types VT Gate to anode leakage current (VS = 40Vdc, TA = 25°C, cathode open) (VS = 40Vdc, TA = 75°C, cathode open) IGAO Gate to cathode leakage current (VS = 40Vdc, anode to cathode shorted) IGKS Peak current (VS = 10Vdc, RG = 1MΩ) (VS = 10Vdc, RG = 10kΩ) 2N6116 2N6117 2N6118 2N6116 2N6117 2N6118 lp Min Typ Max 0.2 0.2 0.2 0.2 0.70 0.50 0.40 0.35 1.6 0.6 0.6 0.6 - 1.0 30 5.0 75 - 5.0 50 - 1.25 0.19 0.08 4.00 1.20 0.70 2.00 0.30 0.15 5.00 2.00 1.00 Unit Volts nAdc nAdc µA Rev. 20150504 2N6116-2N6118 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS High-reliability discrete products and engineering services since 1977 ELECTRICAL CHARACTERSITICS (TA = 25°C unless otherwise specified) Characteristic Valley current (VS = 10Vdc, RG = 1MΩ) (VS = 10Vdc, RG = 10kΩ) Symbol 2N6116, 2N6117 2N6118 2N6116 2N6117, 2N6118 IV Forward voltage (IF = 50mA peak) VF Peak output voltage (VB = 20Vdc, CC = 0.2µF) VO Pulse voltage rise time (VB = 20Vdc, CC = 0.2µF) tr Min Typ Max 70 50 18 18 270 270 50 25 - - 0.8 1.5 6.0 16 - - 40 80 Unit µA Volts Volts ns MECHANICAL CHARACTERISTICS Case TO-18 Marking Body painted, alpha-numeric Pin out See below Dim CD CH HD LC LD LL LU L1 L2 P Q TL TW α TO-18 Inches Millimeters Min Max Min Max 0.178 0.195 4.520 4.950 0.140 0.210 3.556 5.330 0.209 0.230 5.310 5.840 0.100 TP 2.540 TP 0.016 0.021 0.410 0.530 0.500 0.750 12.700 19.050 0.016 0.019 0.410 0.480 - 0.050 0.250 0.100 0.040 0.028 0.048 0.036 0.046 45°TP - 1.270 6.350 2.540 1.020 0.710 1.220 0.910 1.170 45°TP Rev. 20150504 High-reliability discrete products and engineering services since 1977 2N6116-2N6118 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS Rev. 20150504 High-reliability discrete products and engineering services since 1977 2N6116-2N6118 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS Rev. 20150504 High-reliability discrete products and engineering services since 1977 2N6116-2N6118 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS Rev. 20150504