ROHM 2SA2071_11

Power transistor (60V, 3A)
2SA2071
Features
1) High speed switching. (Tf : Typ. : 20ns at IC = 3A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 2A, IB = 0.2A)
3) Strong discharge power for inductive load and capacitance load.
4) Complements the 2SC5824
Dimensions (Unit : mm)
MPT3
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Sourse)
Applications
Low Frequency Amplifier
High speed switching
Each lead has same dimensions
Abbreviated symbol : UN
Structure
PNP Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Taping
Code
T100
Basic ordering unit (pieces)
1000
2SA2071
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
−60
−60
−6
−3
−6
500
2.0
150
−55 to +150
Unit
V
V
V
A
A ∗1
mW
W ∗2
°C
°C
∗1 Pw=100ms
∗2 Mounted on a 40×40×0.7 (mm) ceramic substrate
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2011.03 - Rev.C
2SA2071
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
BVCBO −60
−
−
V IC= −100μA
Collector-base breakdown voltage
Collector-emitter breakdown voltage BVCEO −60
−
−
V IC= −1mA
Emitter-base breakdown voltage
BVEBO
−6
−
−
V IE= −100μA
−
−
−1.0 μA VCB= −40V
ICBO
Collector cut-off current
IEBO
−
−
−1.0 μA VEB= −4V
Emitter cut-off current
−
−200 −500 mV IC= −2A, IB= −0.2A ∗1
Collector-emitter saturation voltage VCE (sat)
hFE
VCE= −2V, IC= −100mA
120
−
270
−
DC current gain
fT
−
180
−
MHz VCE= −10V, IE=10mA, f=10MHz
Transition frequency
Collector output capacitance
Cob
−
50
−
pF VCB= −10V, IE=0mA, f=1MHz
Ton
−
20
−
ns IC= −3A
Turn-on time
IB1= −300mA
Tstg
−
150
−
ns IB2=300mA
Storage time
Tf
−
20
−
ns VCC −25V ∗2
Fall time
∗1
∗1 Non repetitive pulse
∗2 See switching charactaristics measurement cicuits
hFE RANK
Q
120−270
Electrical characteristic curves
Tf
Ton
100
10
−0.01
−0.1
−1
−10
1000
VCE= −2V
DC CURRENT GAIN : hFE
Tstg
100
Ta=125°C
Ta=25°C
Ta= −40°C
10
1
−0.001
−0.01
−0.1
−1
−10
Ta=25°C
VCE= −5V
VCE= −3V
VCE= −2V
100
10
1
−0.001
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 Switching Time
Fig.2 DC Current Gain vs.
Collector Current (Ι)
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
−10
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
IC/IB=10/1
−1
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
−0.01
−0.001
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
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c 2011 ROHM Co., Ltd. All rights reserved.
○
−10
Ta=25°C
BASE EMITTER SATURATION
VOLTAGE : VBE (sat) (V)
−10
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
1000
Ta=25°C
VCC= −25V
IC/IB=10/1
DC CURRENT GAIN : hFE
SWITCHING TIME : (ns)
1000
−1
IC/IB=20/1
IC/IB=10/1
−0.1
−0.01
−0.001
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
2/3
IC/IB=10/1
−1
Ta= −40°C
−0.1 Ta=25°C
Ta=125°C
−0.01
−0.001
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Current
2011.03 - Rev.C
Data Sheet
VCE= −2V
Ta=125°C
Ta=25°C
−1 Ta= −40°C
−0.1
−0.01
0
−0.5
−1
−1.5
1000
Ta=25°C
VCE= −10V
100
10
1
0.001
0.01
0.1
1
1000
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
COLLECTOR CURRENT : IC (A)
−10
TRANSITION FREQUENCY : fT (MHz)
2SA2071
Ta=25°C
f=1MHz
100
10
1
−0.1
10
−1
−10
−100
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER CURRENT : IE (A)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Grounded Emitter
Propagation Characteristics
Fig.8 Transition Frequency
Fig.9 Collector Output Capacitance
Switching characteristics measurement circuits
RL=8.3Ω
VIN
IB1
PW
IC
VCC −25V
IB2
PW 50μs
DUTY CYCLE 1%
IB2
IB1
BASE CURRENT
WAVEFORM
Ton
Tstg
Tf
90%
COLLECTOR CURRENT
WAVEFORM
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c 2011 ROHM Co., Ltd. All rights reserved.
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IC
10%
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2011.03 - Rev.C
Notice
Notes
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R1120A