ASJE1200R100

ADVANCE INFORMATION
SiC JFET
ASJE1200R100
Normally-OFF Trench Silicon
Carbide Power JFET
BVDS
FEATURES:
RDS(ON)max
0.100
V
:
ETS,typ
170
μJ
Die Inside
• Hermetic TO-258 Packaging
• 200°C Maximum Operating Temperature (for 260oC Contact Factory)
• Available Screening:
- MIL-PRF-19500 Equivalent
- Space Level
- MIL-STD-750 Methods & Conditions
• Inherent Radiation Tolerance >100K TID
• Compatible with Standard Gate Driver ICs
• Positive Temperature Coefficient for Ease of Paralleling
• Extremely Fast Switching with No “Tail”
4
Current at 150°C
• 1200 Volt Drain-Source Blocking Voltage
• RDS(on)max of 0.100 
• Voltage Controlled
• Low Gate Charge
• Low Intrinsic Capacitance
APPLICATIONS:
ProductSummary
1200
D (2,4)
G (1)
S (3)
TO-258
• Satellite Solar Inverters
• Mil Spec Power Supplies
- Switch Mode
- Uninterrupted
• Jet Engine Electronics
• Down-hole Electronics (Motor / Compressor Control)
Internal Schematic
123
Non-isolated tab version shown.
For isolated tab version, tab (4)
is No Connect.
MAXIMUM RATINGS
Parameter
ContinuousDrainCurrent
Symbol
ID,Tj=125
Conditions
Tj=125°C
Value
17
ID,Tj=175
Tj=175°C
12
Unit
A
PulsedDrainCurrent(1)
ShortCircuitWithstandTime
IDM
Tc=25°C
30
A
tSC
VDD<800V,TC<125°C
50
μS
PowerDissipation
PD
Tc=25°C
136
W
VGS
GateͲSourceVoltage
OperatingandStorageTemperature
AC
(2)
Ͳ15to+15
Tj,Tj,stg
Tsold
LeadTemperatureforSoldering
1/8"fromcase<10s
(1)Limitedbypulsewidth
(2)RgEXT=1ohm,tp<200ns,seeFigure5forstaticconditions
*ContactFactoryfor260oC
Ͳ55to+200*
260
o
THERMAL CHARACTERISTICS
Value
Parameter
ThermalResistance,junctionͲtoͲcase
ThermalResistance,junctionͲtoͲambient
ASJE1200R100
Rev. 0.1 06/11
Symbol
Rth,JC
Typ
Ͳ
Max
TBD
Rth,JA
Ͳ
TBD
V
o
Unit
C
C
For more products and
information, please visit our
website at www.micross.com
°C/W
Micross Components reserves the right to change products or specifications without notice.
1
ADVANCE INFORMATION
SiC JFET
ASJE1200R100
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Conditions
Min
Value
Typ
Max
Unit
OffCharacteristics
DrainͲSourceBlockingVoltage
TotalDrainLeakageCurrent
TotalGateReverseLeakage
BVDS
IDSS
IGSS
VGS=0V,ID=600ʅA
1200
Ͳ
Ͳ
VDS=1200V,VGS=0V,Tj=25oC
Ͳ
100
600
VDS=1200V,VGS=0V,Tj=175oC
VDS=1200V,VGS=Ͳ15V,
Ͳ
300
1000
Ͳ
1
Ͳ
Tj=25oC
VDS=1200V,VGS=Ͳ15V,
V
μA
Tj=175oC
VGS=Ͳ15V,VDS=0V
Ͳ
10
Ͳ
Ͳ
Ͳ0.1
Ͳ0.3
VGS=Ͳ15V,VDS=1200V
Ͳ
Ͳ0.1
Ͳ
Ͳ
0.08
Ͳ
0.2
1.15
1.4
Ͳ
1.75
V
Ͳ
mA
mA
OnCharacteristics
GateThresholdVoltage
VGS(th)
ID=12A,VGS=3V,
Tj=25°C
ID=12A,VGS=3V,
Tj=125°C
VDS=1V,ID=34mA
GateForwardCurrent
IGFWD
VGS=3V
Ͳ
220
RG
f=1MHz,drainͲsourceshorted
Ͳ
8
Ͳ
:
RG(on)
VGS>2.7V;SeeFigure5
Ͳ
0.5
Ͳ
:
Ͳ
670
Ͳ
Ͳ
103
Ͳ
Ͳ
97
Ͳ
Ͳ
60
Ͳ
Ͳ
10
Ͳ
Ͳ
12
Ͳ
Ͳ
30
Ͳ
Ͳ
25
Ͳ
Ͳ
70
Ͳ
Ͳ
100
Ͳ
DrainͲSourceOnͲresistance
GateResistance
RDS(on)
DynamicCharacteristics
InputCapacitance
Ciss
OutputCapacitance
Coss
ReverseTransferCapacitance
Crss
EffectiveOutputCapacitance,
energyrelated
Co(er)
SwitchingCharacteristics
TurnͲOnDelay
ton
RiseTime
tr
TurnͲOffDelay
toff
FallTime
tf
TurnͲOnEnergy
Eon
TurnͲOffEnergy
Eoff
VDD=100V
VDS=0Vto480V,
VGS=0V
VDS=600V,ID=12A,
InductiveLoad,TJ=25oC
GateDriver=+15V,Ͳ10V,
RgEXT=5ohm
SeeFigure15fortypicalgatedrive/
inductiveloadswitchingcircuit.
0.1
TotalSwitchingEnergy
Ets
Ͳ
170
Ͳ
TurnͲOnDelay
ton
Ͳ
10
Ͳ
RiseTime
tr
Ͳ
15
Ͳ
TurnͲOffDelay
toff
Ͳ
30
Ͳ
FallTime
tf
Ͳ
25
Ͳ
Ͳ
85
Ͳ
Ͳ
100
Ͳ
Ͳ
185
Ͳ
Ͳ
30
Ͳ
Ͳ
1
Ͳ
Ͳ
24
Ͳ
TurnͲOnEnergy
Eon
TurnͲOffEnergy
Eoff
TotalSwitchingEnergy
Ets
TotalGateCharge
Qg
GateͲSourceCharge
Qgs
GateͲDrainCharge
Qgd
ASJE1200R100
Rev. 0.1 06/11
VDS=600V,ID=12A,
InductiveLoad,TJ=150oC
GateDriver=+15V,Ͳ10V,
RgEXT=5ohm
SeeFigure15fortypicalgatedrive/
inductiveloadswitchingcircuit.
VDS=600V,ID=10A,
VGS=+2.5V
:
pF
ns
μJ
ns
μJ
nC
Micross Components reserves the right to change products or specifications without notice.
2
ADVANCE INFORMATION
SiC JFET
ASJE1200R100
Figure 1. Typical Output Characteristics
ID = f(VDS); Tj = 25 °C; parameter: VGS
Figure 2. Typical Output Characteristics
ID = f(VDS); Tj = 125 °C; parameter: VGS
20
3.0 V
30
ID, Drain-Source Current (A)
ID, Drain-Source Current (A)
40
2.5 V
20
2.0 V
10
1.5 V
15
2.5 V
10
2.0 V
5
1.5 V
0
0
0
2
4
VDS, Drain-Source Voltage (V)
0
6
Figure 3. Typical Output Characteristics
ID = f(VDS); Tj = 175°C; parameter: VGS
2
4
VDS, Drain-Source Voltage (V)
40
ID, Drain-Source Current (A)
3.0 V
12
2.5 V
9
6
2.0 V
3
1.5 V
35
30
25
20
15
10
5
0
0
0
1
2
3
4
5
0.00
6
0.50
VDS, Drain-Source Voltage (V)
RDS(on), Drain-Source On-resistance
(ȍ)
8
o
6
175 C
4
25oC
2
0.30
175oC
0
2
3
4
5
6
0.20
25oC
0.10
0.00
1.5
2.0
2.5
2.00
2.50
3.00
0.50
0.45
0.40
150oC
0.35
0.30
0.25
125oC
0.20
0.15
0.10
25oC
0.05
0.00
0
3.0
4
8
12
16
20
ID, Drain Current (A)
VGS, Gate-Source Voltage (V)
ASJE1200R100
Rev. 0.1 06/11
1.50
Figure 6. Drain-Source On-resistance
RDS(on) = f(ID); VGS = 3.0; parameter: Tj
0.50
0.40
1.00
VGS, Gate-Source Voltage (V)
Figure 5. Gate-Source Current
IGS = f(VGS); parameter: Tj
IGS, Gate-Source Current (A)
6
Figure 4. Typical Transfer Characteristics
ID = f(VGS); VDS = 5V
15
ID, Drain-Source Current (A)
3.0 V
Micross Components reserves the right to change products or specifications without notice.
3
ADVANCE INFORMATION
SiC JFET
ASJE1200R100
Figure 8. Drain-Source On-resistance
RDS(ON) = f(IGS); Tj = 25oC
0.30
0.25
RDS(on), Drain-Source On-resistance (ȍ)
RDS(on), Drain-Source On-resistance (ȍ)
Figure 7. Drain-Source On-resistance
RDS(ON) = f(Tj); parameter: IGS
100mA
500mA
0.20
0.15
0.10
0.05
0.00
0
50
100
150
0.094
0.092
0.090
0.088
0.086
0.084
0.082
0.080
0.078
0.076
0.1
200
Tj, Junction Temperature (°C)
Figure 9. Typical Capacitance
C = f(VDS); VGS = 0 V; f = 1 MHz
VGS, Gate-Source Voltage (V)
C, Capacitance (pF)
Ciss
1.E+02
Coss
Crss
1.E+01
1.E+00
2.5
2.0
1.5
1.0
0.5
300
600
900
1200
0
VDS, Drain-Source Voltage (V)
1.50
10
20
30
Qg, Total Gate Charge (nC)
Figure 11. Gate Threshold Voltage
Vth = f(Tj)
Figure 12. Drain-Source Leakage
ID = f(VDS); VGS = 0V; parameter: Tj
1E-03
-1.5mV/oC
ID, Drain Leakage Current (A)
VTH, Gate Threshold Voltage (V)
1000.0
0.0
0
Max
Typical
0.75
175oC
1E-04
1E-05
125oC
1E-06
1E-07
25oC
1E-08
1E-09
0.50
0
50
100
150
0
200
o
Tj, Junction Temperature ( C)
ASJE1200R100
Rev. 0.1 06/11
100.0
3.0
1.E+03
1.00
10.0
Figure 10. Gate Charge
Qg = f(VGS); VDS = 600V; ID = 5A, Tj = 25oC
1.E+04
1.25
1.0
IGS, Gate-Source Current (mA)
300
600
900
1200
BVDS, Drain-Source Blocking Voltage (V)
Micross Components reserves the right to change products or specifications without notice.
4
ADVANCE INFORMATION
SiC JFET
ASJE1200R100
Figure 13. Switching Energy Losses
Figure 14. Switching Energy Losses
Es = f(ID); VDS = 600V; VGD = +15V/-10V, RGEXT = 5ohm
Es = f(RGEXT); VDS = 600V; ID = 12A, VGD = +15V/-10V
600
Tj = 25oC
Tj = 150oC
250
E, Switching Energy (uJ)
E, Switching Energy (uJ)
300
ETS
200
150
EOFF
100
EON
50
Tj = 25oC
Tj = 150oC
500
ETS
400
EOFF
300
EON
200
100
0
0
2
6
10
14
0
18
ID, Drain Current (A)
10
20
30
40
RgEXT, External Gate Resistance, (ȍ)
Figure 15. Inductive Load Switching Circuit
Figure 18. Transient Thermal Impedance
Zth(jc) = f(tP); parameter: Duty Ratio
Zth(jc), Transient Thermal Impedance
(°C/W)
1.E+01
1.E+00
0.5
0.3
1.E-01
1.E-02
0.1
0.05
0.02
0.01
single
1.E-03
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
tP, Pulse Width (s)
ASJE1200R100
Rev. 0.1 06/11
Micross Components reserves the right to change products or specifications without notice.
5
ADVANCE INFORMATION
SiC JFET
ASJE1200R100
MECHANICAL DRAWING
$IA
"3#
"3#
4YP
NOTE:
1. Dimensions in mm (inches)
2. Controlling dimensions (inches)
ORDERING INFORMATION
BasePartNumber
ASJE1200R100
Configuration
Blank=NonͲisolatedTab
S=IsolatedTab
Package
JunctionTemp.Range
M=TOͲ258 Ͳ
EL
EX
TempRanges:
EL=ElevatedTemp.Range,Ͳ55oCto200oC(TJ)
Processing
Blank
/V
/S
EX=ExtremeTemp.Range,Ͳ55oCto260oC(TJ)(consultfactory)
Processing:
ExamplePartNumbers:
Blank=Commercial/StandardProcessing
MILͲPRFͲ19500EquivalentScreeningAvailablePerSCD
/V=JANTXMILͲPRFͲ19500Equivalent(futurestandardoffering)
/S=JANSMILͲPRFͲ19500Equivalent(futurestandardoffering)
ASJE1200R100SMͲEX
ASJE1200R100MͲEL
has commercial plastic versions of this product available. Please refer to the SemiSouth website
http://www.semisouth.com/products/products.html for datasheet specifications and ordering information. The
SemiSouth part number is SJEP120R100 and is supplied in a TO-247 plastic package.
ASJE1200R100
Rev. 0.1 06/11
Micross Components reserves the right to change products or specifications without notice.
6
ADVANCE INFORMATION
SiC JFET
ASJE1200R100
DOCUMENT TITLE
Normally-OFF Trench Silicon Carbide Power JFET
Rev #
0.0
History
Initial Release
Release Date
December 2010
Status
Advance Information
0.1
Replaced TO-257 package
with TO-258 package
June 2011
Advance Information
ASJE1200R100
Rev. 0.1 06/11
Micross Components reserves the right to change products or specifications without notice.
7