3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The SOT-143 package provides ease of manufacturing, and a lower cost assembly option. FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N163 ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature (See Packaging Information). Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation 3N163 Features: MAXIMUM CURRENT Very high Input Impedance Drain Current Low Capacitance MAXIMUM VOLTAGES High Gain Drain to Gate High Gate Breakdown Voltage Drain to Source Low Threshold Voltage Peak Gate to Source2 3N163 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS IGSSF Gate Forward Current ‐10 ‐‐ ‐‐ pA TA= +125°C ‐‐ ‐‐ ‐25 BVDSS Drain to Source Breakdown Voltage ‐40 ‐‐ ‐‐ BVSDS Source‐Drain Breakdown Voltage ‐40 ‐‐ ‐‐ V VGS(th) Gate to Source Threshold Voltage ‐2.0 ‐‐ ‐5.0 ‐2.0 ‐‐ ‐5.0 VGS Gate Source Voltage ‐3.0 ‐‐ ‐6.5 IDSS Drain Leakage Current “Off” ‐‐ ‐‐ 200 pA ISDS Source Drain Current ‐‐ ‐‐ 400 rDS(on) Drain to Source “On” Resistance ‐‐ ‐‐ 250 Ω ID(on) Drain Current “On” ‐5.0 ‐‐ ‐30 mA gfs Forward Transconductance 2000 ‐‐ 4000 µS gos ‐65°C to +200°C ‐55°C to +150°C 375mW 50mA ‐40V ‐40V ±125V CONDITIONS VGS = ‐40V, VDS = 0V ID = ‐10µA, VGS = 0V IS = ‐10µA, VGD = 0V, VBD = 0V VDS = VGS , ID = ‐10µA VDS = ‐15V, ID = ‐10µA VDS = ‐15V, ID = ‐0.5mA VDS = ‐15V, VGS = 0V VDS = 15V, VGS = VDB = 0V VGS = ‐20V, ID = ‐100µA VDS = ‐15V, VGS = ‐10V VDS = ‐15V, ID = ‐10mA , f = 1kHz Click To Buy Output Admittance ‐‐ ‐‐ 250 Ciss Input Capacitance–Output shorted ‐‐ ‐‐ 2.5 3 pF VDS = ‐15V, ID = ‐10mA , f = 1MHz Crss Reverse Transfer Capacitance ‐‐ ‐‐ 0.7 Coss Output Capacitance Input Shorted ‐‐ ‐‐ 3.0 SWITCHING CHARACTERISTICS ‐ TA = 25°C and VBS = 0 unless otherwise noted TIMING WAVEFORMS SYMBOL CHARACTERISTIC MAX UNITS CONDITIONS td(on) Turn On Delay Time 12 VDD = ‐15V ns ID(on) = ‐10mA tr Turn On Rise Time 24 3 RG = RL = 1.4KΩ toff Turn Off Time 50 SWITCHING TEST CIRCUIT Note 1 ‐ Absolute maximum ratings are limiting values above which 3N163 serviceability may be impaired. Note 2 – Device must not be tested at ±125V more than once or longer than 300ms. Note 3 – For design reference only, not 100% tested Micross Components Europe Available Packages: 3N163 in SOT-143 3N163 in bare die. Tel: +44 1603 788967 Email: [email protected] Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. This is trial version If Kingdom, you want get fullFax:version, please register it, thank you. Micross Components Ltd, United Tel: +44 1603 788967, +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx www.verypdf.com Demo (http://www.verypdf.com)