2SB1694 Transistors General purpose amplification (−30V, −1A) 2SB1694 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zDimensions (Units : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −380mV At IC = −500mA / IB = −25mA 0~0.1 0.15 0.2 2.1 0.1Min. Each lead has same dimensions Abbreviated symbol : ES ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 zPackaging specifications zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg Limits −30 −30 −6 −1 −2 200 150 −55~+150 (1) Emitter (2) Base (3) Collector Unit V V V A A∗ mW °C °C Package Type Taping Code T106 Basic ordering unit (pieces) 3000 2SB1694 ∗Single pulse, PW=1ms zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −30 −30 −6 − − − 270 − − Typ. − − − − − −180 − 320 7 Max. − − − −100 −100 −380 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−10µA IC=−1mA IE=−10µA VCB=−30V VEB=−30V IC=−500mA, IB=−25mA VCE=−2V, IC=−100mA ∗1 VCE=−2V, IE=100mA, f=100MHz ∗1 VCB=−10V, IE=0A, f=1MHz ∗1 Pulsed Rev.B 1/2 2SB1694 Transistors DC CURRENT GAIN : hFE Ta=25°C Ta=−40°C 100 10 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current VCE=−2V Pulsed Ta=100°C Ta=25°C 0.1 Ta=−40°C 0.01 0.001 0 0.5 1 1.5 IC/IB=20/1 Pulsed VBE(sat) 1 0.1 Ta=100°C Ta=25°C Ta=−40°C VCE(sat) 0.01 0.001 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 1 IC/IB=20/1 0.1 IC/IB=50/1 IC/IB=10/1 0.01 0.01 0.1 1 COLLECTOR CURRENT : IC (A) 1000 1000 Ta=25°C VCE=−2V f=100MHz 10 0.01 0.1 Ta=25°C VCE=−5V IC/IB=20/1 tstg 100 100 tf tr tdon 10 1 0.01 1 0.1 1 COLLECTOR CURRENT : IC (A) Fig.6 Switching time 10 COLLECTOR CURRENT : IC (A) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25°C IC=0A f=1MHz Pulsed 0.001 0.001 Fig.5 Gain bandwidth product vs. emitter current 10 1 1 EMITTER CURRENT : IE (A) Cob 1 0.1 0.1 Ta=25°C Fig.3 Collector-emitter saturation voltage vs. collector current Fig.4 Grounded emitter propagation characteristics Cib 0.01 COLLECTOR CURRENT : IC (A) BASE TO EMITTER CURRENT : VBE (V) 100 Ta=−40°C Ta=25°C Ta=100°C 10 Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 1 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=−2V Pulsed Ta=100°C SWITCHING TIME : (ns) 1000 BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) zElectrical characteristic curves 1m 1 0.1 s 10 ms PW =1 DC 00 ms Op era tio n 0.01 Ta=25°C Single Pulse 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe Operating Area Rev.B 2/2 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. 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