ROHM RBQ10T45A

Data Sheet
Schottky Barrier Diode
RBQ10T45A
lApplications
General rectification
lStructure
lDimensions (Unit : mm)
4.5±0.3
0.1
2.8±0.2
0.1
8.0±0.2
12.0±0.2
lFeatures
1)Cathode common type.
2)Low IR
3)High reliability
5.0±0.2
①
lConstruction
Silicon epitaxial planer
15.0±0.4
0.2
8.0
10.0±0.3
0.1
13.5MIN
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
ROHM : TO220FN
①
Manufacture Date
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
Average rectified forward current (*1)
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
lElectrical characteristics (Tj=25C)
Parameter
Limits
45
45
10
50
150
Unit
V
V
A
A
C
C
-40 to +150
Symbol
VF
Min.
Forward voltage
-
-
0.65
V
Reverse current
IR
-
-
150
mA
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Typ. Max.
1/4
2.6±0.5
Unit
Conditions
IF=5A
VR=45V
2011.11 - Rev.A
Data Sheet
RBQ10T45A
10
100000
Ta=150°C
10000
1
REVERSE CURRENT:IR(μA)
FORWARD CURRENT:IF(A)
Ta=125°C
Ta=150°C
Ta=75°C
0.1
Ta=25°C
Ta=-25°C
1000
Ta=125°C
100
10
Ta=75°C
1
Ta=25°C
0.1
Ta=-25°C
0.01
0.01
0
100
200
300
400
500
600
700
800
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
30
40
50
600
590
f=1MHz
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
10
Ta=25°C
IF=5A
n=30pcs
580
570
AVE:551.3mV
560
550
540
530
520
510
1
500
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
20
15
10
AVE:12.2mA
5
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
550
Ta=25°C
VR=45V
n=30pcs
25
REVERSE CURRENT:IR(mA)
10
0
540
530
520
Ta=25°C
f=1MHz
VR=0V
n=10pcsa
510
500
AVE:489.8pF
490
480
470
460
450
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/4
2011.11 - Rev.A
300
30
REVERSE RECOVERY TIME:trr(ns)
1cyc
IFSM
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RBQ10T45A
8.3ms
200
AVE:128.5A
100
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
AVE:10.8ns
10
5
0
0
trr DISPERSION MAP
IFSM DISRESION MAP
300
300
IFSM
250
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
250
8.3ms 8.3ms
1cyc
200
150
100
IFSM
t
200
150
100
50
50
0
0
1
10
100
1
10
100
8
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
1000
Rth(j-a)
10
Rth(j-c)
0.1
0.01
0.001
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
10
D=1/2
6
Sin(q＝180)
4
DC
2
0
0.01
0.1
1
10
100
1000
0
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© 2011 ROHM Co., Ltd. All rights reserved.
5
10
15
20
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
3/4
2011.11 - Rev.A
Data Sheet
RBQ10T45A
30
2
0A
25
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
1.5
1
DC
0.5
D=1/2
Sin(q=180)
t
DC
20
T
D=1/2
VR
D=t/T
VR=20V
Tj=150°C
15
10
5
Sin(q＝180)
0
0
0
10
20
30
40
0
50
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
30
30
Io
0A
0V
t
20
DC
T
D=t/T
VR=20V
Tj=150°C
15
D=1/2
10
Sin(q＝180)
5
AVE:23.3kV
25
VR
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io
0V
20
15
10
AVE:4.9kV
5
0
0
0
25
50
75
100
125
150
C=200pF
R=0W
CASE TEMPERATURE:Tc(℃)
DERATING DURVE(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
C=100pF
R=1.5kW
ESD DISPERSION MAP
4/4
2011.11 - Rev.A
Notice
Notes
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R1120A