PCSG150N60 Short Circuit Rated IGBT Chip 600V, 150A, VCE (sat) Typ = 2.2V Part VCES ICN VCE (sat) Typ Die Size PCSG150N60 600V 150A 2.2V 11.1 x 11.1 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • AC & DC Motor Controls • High Speed Switching & High Input Impedance • General Purpose Inverters • Short Circuit Rated • Positive Temp-Coefficient @ >100A Maximum Ratings Symbol Parameter Ratings Units VCES Collector to Emitter Voltage 600 V Gate to Emitter Voltage ±20 V 150 A 300 A 10 µS -40 to 150 °C VGES IC 1 Drain Current ICM TSC TJ, TSTG Continuous (TC = 25°C) Pulsed Collector Current Short Circuit Rate Withstand Time VCC = 300V,VGE = 15V, TC = 100°C Operation Junction & Storage Temperature Static Characteristics, TJ = 25° unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V ICES Collector Cut-Off Current VCE = VCES , VGE = 0V - - 250 µA IGES(R) G-E Leakage Current, Reverse VGE = -30 - - -70 nA IGES(F) G-E Leakage Current, Forward VGS = 30V 70 nA Symbol Parameter Test Conditions Min Typ Max Units VGE(th) VGE(th) VCE(sat) VCE(sat) G-E Threshold Voltage IC = 250µA, VCE = VGE 4.4 - 7.3 V G-E Threshold Voltage IC = 150mA, VCE = VGE 5.0 - 8.5 V Collector to Emitter Saturation Voltage IC = 15A, VGE = 15V - - 1.6 V Collector to Emitter Saturation Voltage IC = 150A, VGE = 15V - 2.2 2.8 V Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 On Characteristics, TJ = 25°C unless otherwise noted Dynamic Characteristics2, TJ = 25°C unless otherwise noted Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions Min Typ Max - 12840 - - 1400 - - 354 - - 620 - - 120 - - 270 - Min Typ Max - 40 - ns - 70 - ns - 90 - ns - 110 - ns VCE = 30V, VGE = 0V f = 1MHz VCE = 300V, IC = 150A VGE = 15V Units pF nC Switching Characteristics3, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions td(on) Turn-On Delay Time tr Rise Time td (off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss - 1.6 - mJ Eoff Turn-Off Switching Loss - 4.8 - mJ Ets Total Switching Loss - 6.4 - mJ td (on) Turn-On Delay Time - 40 - ns - 80 - ns - 100 - ns - 300 - ns 2.0 - mJ VCC = 300V, IC = 150A RG = 2.4Ω, VGE = 15V Inductive Load, TC = 25°C Units tr Rise Time td (off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss - Eoff Turn-Off Switching Loss - 8.0 - mJ Ets Total Switching Loss - 10.0 - mJ VCC = 300V, IC = 150A RG = 2.4Ω, VGE = 15V Inductive Load, TC = 125°C Notes: 1. Performance will vary based on assembly technique and substrate choice 2. Defined by chip design, not subject to 100% production test at wafer level 3. Specified in discrete package for indicative purposes only, bare die performance will vary depending on module design. 4. Ordering Guide Part Number Format Detail / Drawing PCSG150N60MW PCSG150N60MF PCSG150N60MD Un-sawn wafer, electrical rejects inked Page 3 Sawn wafer on film-frame Page 4 Singulated die / chips in waffle pack Page 4 Page2 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Die Drawing – Dimensions (microns) Mechanical Data Parameter Units Chip Dimensions Un-sawn 11060 x 11130 µm Chip Thickness (Nominal) 350 µm Gate Pad Size 1020 x 1440 µm Wafer Diameter 127 (subject to change) mm 80 (subject to change) µm Saw Street Wafer notch parallel with frame flat Topside Metallisation & Thickness Al 4 µm Backside Metallisation & Thickness V/Ni/Ag 0.45 µm Topside Passivation Silicon Nitride Recommended Die Attach Material Soft Solder or Conductive Epoxy Recommended Wire Bond - Gate Al 305µm X1 Recommended Wire Bond – Source Al 305µm X16 Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page3 Wafer orientation on frame Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 13.94mm ±0.13mm pocket size Y = 13.94mm ±0.13mm pocket size Z = 0.99mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 3 X 3 (9) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page4 1. Life support devices or systems are devices or systems which,