650V, 75A, VCE(sat) 1.65V, VGE(th) min 4V, tr 43ns - tf 24ns, Eon 2.85mJ, Eoff 1.2mJ - Die Size - 5.4 x 5.3 mm 2 - FGH75T65UP IGBT DIE

FGH75T65UP
Field Stop Trench IGBT Chip
650V, 75A, VCE(sat) = 1.65V
Part
VCES
ICn
VCE (sat) Typ
Die Size
FGH75T65UP
650V
75A
1.65
5.4 x 5.3 mm
2
See page 2 for ordering part numbers & supply formats
Features
Applications
•
Inverter Modules
•
Short Circuit Ruggedness > 5µs @ 25°C
•
Welding & Drive Applications
•
Low Saturation Voltage
•
Positive Temp Co-efficient for paralleling
Maximum Ratings
Symbol
Parameter
Ratings
Units
VCES
Collector to Emitter Voltage
650
V
Gate to Emitter Voltage
±20
V
Continuous (TC = 25°C)
150
A
Continuous (TC = 100°C)
75
A
A
VGES
IC
1
Drain Current
ICM
Pulsed Collector Current
225
ILM
Clamped Inductive Load Current @ TC = 25°C
225
A
SCWT
Short Circuit Withstand Time @ TC = 25°C
5
us
TJ, TSTG
Operation Junction & Storage Temperature
-55 to 175
°C
Static Characteristics, TJ = 25° unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVCES
Collector to Emitter Breakdown Voltage
VGE = 0V, IC = 1mA
650
-
-
V
ICES
Collector Cut-Off Current
VCE = VCES , VGE = 0V
-
-
250
µA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
VGE(th)
G-E Threshold Voltage
IC = 75mA, VCE = VGE
4.0
6.0
7.5
V
IC = 75A, VGE = 15V
-
1.65
2.3
V
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 75A, VGE = 15V
@ 175°C
-
2.05
-
V
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page1
On Characteristics, TJ = 25°C unless otherwise noted
Dynamic Characteristics2, TJ = 25°C unless otherwise noted
Symbol
Parameter
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
Test Conditions
VCE = 30V, VGE = 0V
f = 1MHz
VCE = 400V, IC = 75A
VGE = 15V
Min
Typ
Max
Units
-
5665
-
-
205
-
-
100
-
-
385
-
-
45
-
-
210
-
Min
Typ
Max
-
32
-
ns
-
43
-
ns
-
166
-
ns
-
24
-
ns
2.85
-
mJ
pF
nC
Switching Characteristics3, TJ = 25°C unless otherwise noted
Symbol
Parameter
td(on)
Turn-On Delay Time
Test Conditions
Units
tr
Rise Time
td (off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
-
Eoff
Turn-Off Switching Loss
-
1.2
-
mJ
Ets
Total Switching Loss
-
4.05
-
mJ
td (on)
Turn-On Delay Time
-
30
-
ns
-
57
-
ns
-
176
-
ns
-
21
-
ns
tr
Rise Time
td (off)
Turn-Off Delay Time
tf
Fall Time
VCC = 400V, IC = 75A
RG = 3.0Ω, VGE = 15V
Inductive Load, TC = 25°C
VCC = 400V, IC = 75A
RG = 3.0Ω, VGE = 15V
Inductive Load, TC = 175°C
Eon
Turn-On Switching Loss
-
4.45
-
mJ
Eoff
Turn-Off Switching Loss
-
1.60
-
mJ
Ets
Total Switching Loss
-
6.05
-
mJ
TSC
Short Circuit Withstand Time
5
-
-
µs
VGE = 15V, VCC ≤400V
RG = 10Ω
Notes:
1. Performance will vary based on assembly technique and substrate choice
2. Defined by chip design, not subject to 100% production test at wafer level
3. Specified in discrete package for indicative purposes only, bare die performance will vary depending on
module design.
4.
Part Number
Format
Detail / Drawing
FGH75T65UPMW
Un-sawn wafer, electrical rejects inked
Page 3
FGH75T65UPMF
Sawn wafer on film-frame
Page 4
FGH75T65UPMD
Singulated die / chips in waffle pack
Page 4
Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page2
Ordering Guide
Die Drawing
Mechanical Data
Parameter
Units
Chip Dimensions Un-sawn
5440 x 5310
µm
Chip Thickness (Nominal)
75
µm
Gate Pad Size
405 x 562
µm
Wafer Diameter
200 (subject to change)
mm
Saw Street
80 (subject to change)
µm
Wafer orientation on frame
Wafer notch parallel with frame flat
Topside Metallisation & Thickness
Al
4
µm
Backside Metallisation & Thickness
V/Ni/Ag
0.45
µm
Topside Passivation
Nitride
Recommended Die Attach Material
Soft Solder or Conductive Epoxy
Al 125µm X1
Al 380µm X2
Page3
Recommended Wire Bond - Gate
Recommended Wire Bond – Source
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Sawn Wafer on Film-Frame – Dimensions (inches)
Die in Waffle Pack – Dimensions (mm)
A
X
X = 5.56mm ±0.13mm pocket size
Y = 5.56mm ±0.13mm pocket size
Z = 0.89mm ±0.08mm pocket depth
A = 5° ±1/2° pocket draft angle
No Cross Slots
Array = 6 X 6 (36)
Y
Z
X
OVERALL TRAY SIZE
Size = 50.67mm ±0.25mm
Height = 3.94mm ±0.13mm
Flatness = 0.30mm
DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO
RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS
GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION.
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR
DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY
ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND
CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS
WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
(a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use
provided in the labelling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page4
1. Life support devices or systems are devices or systems which,
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