FGH40T120SM Field Stop Trench IGBT Chip 1200V, 40A, VCE(sat) = 1.8V Part VCES ICn VCE (sat) Typ Die Size FGH40T120SM 1200V 40A 1.8 6.66 x 6.49 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • AC & DC Motor Controls • High Speed Switching & High Input Impedance • General Purpose Inverters • Positive Temperature Coefficient • Low Saturation Voltage Maximum Ratings Symbol Parameter Ratings Units VCES Collector to Emitter Voltage 1200 V Gate to Emitter Voltage ±25 Transient Gate to Emitter Voltage ±30 VGES IC V Collector Current 1 Continuous (TC = 25°C) 80 A Collector Current 1 Continuous (TC = 100°C) 40 A ICM Pulsed Collector Current 160 A ILM Clamped Inductive Load Current @ TC = 25°C 160 A TJ, TSTG Operation Junction & Storage Temperature -55 to 175 °C Static Characteristics, TJ = 25° unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250 µA 1200 - - V ICES Collector Cut-Off Current VCE = VCES , VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA Symbol Parameter Test Conditions Min Typ Max Units VGE(th) G-E Threshold Voltage IC = 40mA, VCE = VGE 4.9 6.2 7.5 V IC = 40A, VGE = 15V - 1.8 2.4 V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V TC = 175°C - 2.0 - V 1. 2. 3. Notes: Performance will vary based on assembly technique and substrate choice Defined by chip design, not subject to 100% production test at wafer level Specified in discrete package for indicative purposes only, bare die performance will vary depending on module design. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2015 Fairchild Semiconductor Corporation & Micross Components Page1 On Characteristics, TJ = 25°C unless otherwise noted Dynamic Characteristics2, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 30V, VGE = 0V f = 1MHz VCE = 600V, IC = 40A VGE = 15V Min Typ Max Units - 4300 - pF - 180 - pF - 100 - pF - 370 - nC - 23 - nC - 210 Min Typ Max - 40 - ns - 47 - ns - 475 - ns - 10 nC Switching Characteristics3, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions td(on) Turn-On Delay Time tr Rise Time td (off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss - 2.7 - mJ Eoff Turn-Off Switching Loss - 1.1 - mJ Ets Total Switching Loss - 3.8 - mJ td (on) Turn-On Delay Time - 40 - ns tr Rise Time - 55 - ns td (off) Turn-Off Delay Time - 520 - ns tf Fall Time - 50 - ns Eon Turn-On Switching Loss - 3.4 - mJ Eoff Turn-Off Switching Loss - 2.5 - mJ Ets Total Switching Loss - 5.9 - mJ VCC = 600V, IC = 40A RG = 10Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 600V, IC = 40A RG = 10Ω, VGE = 15V Inductive Load, TC = 175°C Units ns Notes: 1. Performance will vary based on assembly technique and substrate choice 2. Defined by chip design, not subject to 100% production test at wafer level 3. Specified in discrete package for indicative purposes only, bare die performance will vary depending on module design. Ordering Guide Part Number Format Detail / Drawing FGH40T120SMW Un-sawn wafer, electrical rejects inked Page 3 FGH40T120SMF Sawn wafer on film-frame Page 4 FGH40T120SMD Singulated die / chips in waffle pack Page 4 Page2 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2015 Fairchild Semiconductor Corporation & Micross Components Die Drawing – Dimensions (µm) EMITTER GATE EMITTER CHIP BACKSIDE IS COLLECTOR Mechanical Data Parameter Units Chip Dimensions Un-sawn 6660 x 6490 µm Chip Thickness (Nominal) 125 µm Gate Pad Size 350 x 513 µm Wafer Diameter 150 (subject to change) mm 80 (subject to change) µm Saw Street Wafer orientation on frame Wafer notch parallel with frame flat Topside Metallisation & Thickness Al Backside Metallisation & Thickness Al/V/Ni/Ag 4 µm 0.35 µm Nitride Recommended Die Attach Material Soft Solder or Conductive Epoxy Recommended Wire Bond - Gate Al 125µm X1 Recommended Wire Bond – Source Al 380µm X2 Page3 Topside Passivation Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2015 Fairchild Semiconductor Corporation & Micross Components Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 6.86mm ±0.13mm pocket size Y = 6.86mm ±0.13mm pocket size Z = 0.89mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 4 X 4 (16) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. 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LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2015 Fairchild Semiconductor Corporation & Micross Components Page4 1. Life support devices or systems are devices or systems which,