ROHM DA221_11

Data Sheet
Switching Diode
DA221
Dimensions (Unit : mm)
Applications
Ultra high speed switching
Land size figure (Unit : mm)
1.0
0.5 0.5
0.7
1.6±0.2
0.3±0.1
0.05
0.15±0.05
(3)
Construction
Silicon epitaxial planar
0~0.1
0.6
0.6
0.55±0.1
0.5
0.5
1.0±0.1
(1)D2:C (2)D1:A
(3)D1:C D2:A
EMD3
0.1Min
(1)
(2)
0.7
0.7
1.6±0.2
0.8±0.1
0.2±0.1
-0.05
1.3
Features
1) Ultra small mold type. (EMD3)
2) High reliability.
Structure
0.7±0.1
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping specifications (Unit : mm)
φ1.55±0.1
φ1.5 0.1
00
2.0±0.05
0.3±0.1
8.0±0.2
0~0.1
1.8±0.2
1.8±0.1
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
φ0.5±0.1
0.9±0.2
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
IFM
Forward current (Single)
Average rectified forward current (Single)
Io
Isurge
Surge current (t=1us)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Rarted in slash put frequency
f
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
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© 2011 ROHM Co., Ltd. All rights reserved.
Limits
20
20
200
100
300
150
150
55 to 150
100
Unit
V
V
mA
mA
mA
mW
°C
°C
MHz
Conditions
Symbol
VF
IR
Min.
-
Typ.
-
Max.
1.0
0.1
Unit
V
μA
IF=10mA
VR=15V
Ct
-
-
4.0
pF
VR=6V , f=1MHz
1/3
2011.06 - Rev.B
Data Sheet
DA221
100
D2
Ta=125℃
10
Ta=25℃
Ta=150℃
Ta=25℃
1
FORWARD CURRENT : I F(mA)
Ta=75℃
Ta=125℃
Ta=75℃
10
Ta=25℃
Ta=125℃
Ta=150℃
1
Ta=25℃
0.1
0
100
200
300
400
500
600
700
800
0
100
200
500
600
700
800
Ta=75℃
1
Ta=25℃
0.1
Ta=25℃
D2
0.01
0.001
0
900 1000 1100
10
f=1MHz
10
0
690
Ta=25℃
IF=10mA
n=30pcs
860
850
840
830
AVE:849.7mV
0.7
0.6
0.5
0.4
AVE:0.1065nA
0.3
0.2
0.1
V F DISPERSION MAP
IR DISPERSION MAP
5
6
5
4
AVE:0.620nA
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
7
9
7
6
5
4
3
AVE:1.85pF
2
1
0
0
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© 2011 ROHM Co., Ltd. All rights reserved.
D1
8
1
IR DISPERSION MAP
Ta=25℃
VR=6V
f=1MHz
n=10pcs
REVERSE RECOVERY TIME:trr(ns)
10
Ta=25℃
VR=15V
n=30pcs
8
0.8
D1
0
VF DISPERSION MAP
D2
Ta=25℃
V R=15V
n=30pcs
0.9
820
10
15
1
D2
AVE:709.8mV
680
10
REVERSE VOLTAGE : VR(V)
V R-Ct CHARACTERISTICS
REVERSE CURRENT : IR(nA)
700
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : V F(mV)
710
1
15
870
720
D2
0.1
5
REVERSE VOLTAGE : V R(V)
VR-IR CHARACTERISTICS
D1
15
10
0
730
10
f=1MHz
1
15
Ta=25℃
IF=10mA
n=30pcs
5
REVERSE VOLTAGE : V R(V)
VR-IR CHARACTERISTICS
0.1
5
Ta=25℃
0.01
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT : IR(nA)
Ta=125℃
0
FORWARD VOLTAGE : V F(mV)
400
D1
0.001
REVERSE CURRENT : IR (nA)
Ta=25℃
0.1
10
Ta=150℃
2
300
Ta=75℃
D1
1
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100
3
10
0.1
900 1000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
9
REVERSE CURRENT : IR(nA)
D1
FORWARD CURRENT : I F(mA)
Ta=150℃
100
100
Ta=25℃
VR=6V
IF=10mA
RL=100Ω
Irr=0.1*IR
n=10pcs
D1
4
3
2
1
AVE:1.20ns
0
Ct DISPERSION MAP
2/3
trr DISPERSION MAP
2011.06 - Rev.B
Data Sheet
DA221
1000
Rth(j-c)
Mounted on epoxy board
IF=10mA
IM=1mA
10
1ms
time
3.5
3
2.5
0.1
1
10
AVE:0.33kV
AVE:0.96kV
2
1.5
1
0
1
0.01
9
4
0.5
300us
0.001
D1
100
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
1000
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
4.5
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
100
10
5
Rth(j-a)
7
6
5
4
3
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
3/3
AVE:5.06kV
AVE:1.27kV
2
1
0
C=200pF
R=0Ω
D2
8
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
2011.06 - Rev.B
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A