250V, 62A, 29mOhm, 100nC – Die Size - 6.8 x 6.8 mm2 – FQA62N25C MOSFET Bare Die

FQA62N25C
N-Channel Planar DMOS Mosfet Chip
250V, 62A, 35mΩ1
Chip
Part
V(BR)DSS
IDn
RDS(on)
FQA62N25C
250V
62A
35mΩ
1
Die Size
9.0 x 7.1 mm
Photo
2
See page 2 for ordering part numbers & supply formats
TBA
Features
Applications
•
High density AC / DC Converters
•
High Avalanche Energy Strength
•
Switching PWM stages
•
Low Gate Charge
•
Low Crss
Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
250
V
Gate to Source Voltage
±30
V
VGSS
ID
Drain Current
IDM
Drain Current
TJ, TSTG
2
3
Continuous (TC = 25°C)
62
Continuous (TC = 100°C)
39
Pulsed
248
Operation Junction & Storage Temperature
EAS
Single Pulsed Avalanche Energy
-55 to 150
°C
L= 0.96mH, IAS=62A,VDD =50V, RG=25Ω
Starting TJ =25°C
2300
mJ
ISD≤62A,di/dt≤300A/µs, VDD≤BVDSS, Start @ TJ=25°C
5.5
V/ns
4
4
dv/dt
Peak Diode Recovery dv/dt
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
250
-
-
V
VGS(th)
Gate threshold Voltage
VGS = VDS, ID =250µA
2.0
-
4.0
V
IDSS
Zero Gate Voltage Drain Current
VDS = 250V, VGS = 0V
-
-
10
µA
IDSS
Zero Gate Voltage Drain Current 125°C
VDS = 200V, VGS = 0V
-
-
100
µA
IGSSF
Gate to Body Leakage Current, Forward
VGS = 30V , VDS = 0V
-
-
IGSSR
Gate to Body Leakage Current, Reverse
VGS = -30V , VDS = 0V
1
RDS(on)
Static Drain to Source On Resistance
1.
2.
3.
VGS = 10V, ID = 31A
-
29
100
nA
-100
nA
35
mΩ
Notes:
Defined by chip design, not subject to 100% production test at wafer level
Performance will vary based on assembly technique and substrate choice
Repetitive Rating: Pulse width limited by maximum junction temperature
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
Page1
Static Characteristics, TJ = 25° unless otherwise noted
Dynamic Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
VDS = 40V, ID = 31A
-
55
-
S
-
4830
6280
pF
-
945
1230
pF
-
63.5
83
pF
-
100
130
nC
-
25.5
-
nC
-
39
-
nC
gFS
Forward Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS =200V, ID = 62A
5
VGS = 10V
Typ
Max
Units
Switching Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Test Conditions
VDD = 125V, ID = 62A
RG = 25Ω5
Min
Typ
Max
Units
-
75
160
ns
-
395
800
ns
-
245
500
ns
-
335
680
ns
Units
Drain-Source Diode Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
62
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
248
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 62A
-
-
1.5
V
trr
Reverse Recovery Time
-
340
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 62A
dIF/dt = 100A/μs
-
4.77
-
µC
4.
5.
Notes:
Characterised by design & tested at component level, not subject to production test at wafer level
Essentially independent of Operating Temperature Typical Characteristics
Ordering Guide
Part Number
Format
Detail / Drawing
FQA62N25CMW
Un-sawn wafer, electrical rejects inked
Page 3
FQA62N25CMF
Sawn wafer on film-frame
Page 4
FQA62N25CMD
Singulated die / chips in waffle pack
Page 4
Page2
Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
Die Drawing
Mechanical Data
Parameter
Units
Chip Dimensions Un-sawn
9040 x 7140
µm
Chip Thickness (Nominal)
300
µm
Gate Pad Size
512 x 706
µm
Wafer Diameter
150 (subject to change)
mm
Saw Street
80 (subject to change)
µm
Wafer orientation on frame
Wafer notch parallel with frame flat
Topside Metallisation & Thickness
Al
4
µm
Backside Metallisation & Thickness
V/Ni/Ag
0.45
µm
Topside Passivation
Silicon Nitride
Recommended Die Attach Material
Soft Solder or Conductive Epoxy
Al 150µm X1
Al 380µm X2
Page3
Recommended Wire Bond - Gate
Recommended Wire Bond – Source
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
Sawn Wafer on Film-Frame – Dimensions (inches)
Die in Waffle Pack – Dimensions (mm)
A
X
X = 10.13mm ±0.13mm pocket size
Y = 7.59mm ±0.13mm pocket size
Z = 0.61mm ±0.08mm pocket depth
A = 5° ±1/2° pocket draft angle
No Cross Slots
Array = 4 X 5 (20)
Y
Z
X
OVERALL TRAY SIZE
Size = 50.67mm ±0.25mm
Height = 3.94mm ±0.13mm
Flatness = 0.30mm
DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO
RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS
GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION.
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR
DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY
ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND
CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS
WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
(a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use
provided in the labelling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
Page4
1. Life support devices or systems are devices or systems which,
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