600V, 50A, VF 1.38V, trr 75ns – Die Size - 4.06 x 4.06 mm2 – FFH50US60S Rectifier Bare Die

FFH50US60S
STEALTH™ Rectifier Diode Chip
600V, 50A, VF 1.38V, trr = 75ns
Part
VRRM
IF(AV)n
VF Typ
trr Typ
Die Size
FFH50US60S
600V
50A
1.38V
75ns
4.06 x 4.06 mm
2
See page 2 for ordering part numbers & supply formats
Features
Applications
•
General Purpose
•
Soft Recovery, trr = 75ns @ IF = 50A
•
Free Wheeling Diode
•
Low VF & Reverse Recovery Current
•
Avalanche Energy Rated
Maximum Ratings
Symbol
Parameter
Ratings
Units
VRRM
Peak Repetitive Reverse Voltage
600
V
VRWM
Working Peak Reverse Voltage
600
V
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current @ TC = 120°C
50
A
IFSM
Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave
500
A
20
mJ
-55 to 175
°C
1
3
EAVL
Avalanche Energy (1A, 40mH)
TJ, TSTG
Operation Junction & Storage Temperature
Electrical Characteristics @ 25°C unless otherwise specified
Parameter
Forward Voltage
VF
Test Conditions
2
Max
Unit
TC = 25°C
-
1.38
1.54
V
TC = 125°C
-
1.37
1.53
TC = 25°C
-
-
100
μA
TC = 125°C
-
-
1
mA
IF = 1A, dl/dt = 100A/µs, VR =15V
-
47
-
IF = 50A, dl/dt = 100A/µs, VR = 15V
-
75
-
-
113
-
-
9.6
-
A
-
0.9
-
µC
-
235
-
ns
-
1.5
-
-
-
15
-
A
-
2.3
-
µC
VR = 600V
3
Reverse Recovery Time
trr
Typ
IF = 50A
Instantaneous Reverse
2
Current
IR
Min
3
trr
Reverse Recovery Time
IR(REC)
3
IF = 50A, dI/dt = 200A/μs
VR = 390V, TC = 25°C
3
IF = 50A, dI/dt = 200A/μs
VR = 390V, TC = 125°C
Reverse Recovery Current
QRR
3
Reverse Recovery Charge
3
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)3
IR(REC)
Reverse Recovery Current
3
QRR
Reverse Recovery Charge
1.
2.
3.
ns
Notes:
Performance will vary based on assembly technique and substrate choice
Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
Specified in discrete package, not subject to 100% production test at wafer level
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page1
Symbol
Ordering Guide
Part Number
Format
Detail / Drawing
FFH50US60S MW
Un-sawn wafer, electrical rejects inked
Page 2
FFH50US60S MF
Sawn wafer on film-frame
Page 3
FFH50US60S MD
Singulated die / chips in waffle pack
Page 3
Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request
Die Drawing – Dimensions in µm
4064
40
3048
3048
Passivated area
4064
ANODE
Chip backside is CATHODE
Mechanical Data
Parameter
Units
Chip Dimensions Un-sawn
4064 x 4064
µm
Chip Thickness (Nominal)
250
µm
Anode Pad Size
3048 x 3048
µm
Wafer Diameter
127 (subject to change)
mm
80 (subject to change)
µm
Saw Street
Wafer notch parallel with frame flat
Topside Metallisation & Thickness
Al
6
µm
Backside Metallisation & Thickness
V/Ni/Ag
0.3
µm
Topside Passivation
Silicon Nitride
Recommended Die Attach Material
Soft Solder or Conductive Epoxy
Recommended Wire Bond - Anode
Al 380µm X3
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page2
Wafer orientation on frame
Sawn Wafer on Film-Frame – Dimensions (inches)
Die in Waffle Pack – Dimensions (mm)
A
X
X = 4.19mm ±0.13mm pocket size
Y = 4.19mm ±0.13mm pocket size
Z = 0.61mm ±0.08mm pocket depth
A = 5° ±1/2° pocket draft angle
No Cross Slots
Array = 6 X 6 (36)
Y
Z
X
OVERALL TRAY SIZE
Size = 50.67mm ±0.25mm
Height = 3.94mm ±0.13mm
Flatness = 0.30mm
DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO
RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS
GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION.
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR
DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY
ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND
CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS
WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
(a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use
provided in the labelling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page3
1. Life support devices or systems are devices or systems which,
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