FFP20S65S STEALTH™ Rectifier Diode Chip 650V, 20A, VF 2.1V, trr = 42ns Part VRRM IF(AV)n VF Typ trr Typ Die Size FFP20S65S 650V 20A 2.1V 42ns 1.9 x 4.1 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • General Purpose • Exceptionally Soft Recovery • Free Wheeling Diode • Low Reverse Recovery Current • 175°C rated, optimised for low loss performance Maximum Ratings Symbol Parameter Ratings Units VRRM Peak Repetitive Reverse Voltage 650 V VRWM Working Peak Reverse Voltage 650 V VR DC Blocking Voltage 650 V 1 IF(AV) Average Rectified Forward Current @ TC = 100°C 20 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 120 A TJ, TSTG Operation Junction & Storage Temperature -55 to 175 °C Electrical Characteristics, TJ = 25° unless otherwise noted Parameter Test Conditions VF Forward Voltage 2 IF = 20A 2 IR Reverse Current VR = 665V 3 Erec Reverse Recovery Energy trr Reverse Recovery Time 3 3 Irr Reverse Recovery Current IF =20A, dI/dt =200A/µs 3 Qrr Reverse Recovery Charge 1. 2. 3. Min Typ Max Units TC = 25°C - 2.1 2.6 V TC = 175°C - 1.7 - TC = 25°C - - 10 TC = 175°C - 96 - uJ TC = 25°C - 42 - ns TC = 175°C - 200 - TC = 25°C - 3.6 - TC = 175°C - 8.0 - TC = 25°C - 76 - TC = 175°C - 800 - µA A nC Notes: Performance will vary based on assembly technique and substrate choice Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Tested in discrete package, not subject to 100% production test at wafer level Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 Symbol Ordering Guide Part Number Format Detail / Drawing FFP20S65SMW Un-sawn wafer, electrical rejects inked Page 2 FFP20S65SMF Sawn wafer on film-frame Page 3 FFP20S65SMD Singulated die / chips in waffle pack Page 3 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Die Drawing - Dimensions in µm 1900 40 949.2 Passivated area 3109.2 4060 ANODE Chip backside is CATHODE Mechanical Data Parameter Units Chip Dimensions Un-sawn 1900 x 4060 µm Chip Thickness (Nominal) 250 µm Anode Pad Size 949.2 x 3109 µm Wafer Diameter 127mm (subject to change) mm Saw Street 80 (subject to change) µm Wafer orientation on frame Wafer notch parallel with frame flat Topside Metallisation & Thickness Al 6 µm Backside Metallisation & Thickness V/Ni/Ag 0.3 µm Silicon Nitride Soft Solder or Conductive Epoxy Recommended Wire Bond - Anode Al 380µm X2 Page2 Topside Passivation Recommended Die Attach Material Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 4.45mm ±0.13mm pocket size Y = 2.77mm ±0.13mm pocket size Z = 0.91mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 8 X 12 (96) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page3 1. Life support devices or systems are devices or systems which,