English

BLM3401
BLM3401
P-Channel Enhancement
Mode MOSFET
FEATURES
APPLICATIONS
VDS
-30V
VGS
12V
RDSon TYP
[email protected]
[email protected]
[email protected]
ID
-4A
DESCRIPTION
•
•
•
Load Switch
Portable Devices
DCDC conversion
Pin Configuration
This device is particularly suited for low
voltage application such as portable
equipment, power management and other
battery powered circuits, and low in-line
power dissipation are needed in a very small
outline surface mount package Excellent
thermal and electrical capabilities.
Packaging Information
Page 1
V1.0
P-Channel Enhancement Mode MOSFET
BLM3401
Absolute Maximum Ratings @TA=25℃
℃ unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous
Pulsed
Continuous Power Dissipation
Operating and Storage Temperature Range
Drain Current (Note 1)
Symbol
Vdss
Vgss
Id
Idm
Pd
Tj,Tstg
Limit
-30
±12
-4
-30
800
-55~150
Unit
V
V
A
A
mW
℃
Electrical Characteristics @TA=25℃
℃ unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Idss
Vgs=0V, Vds =-30 V ---1
uA
Gate - Body Leakage, Forward
Igssf
Vgs =-12V
---100 nA
Gate–Body Leakage, Reverse
Igssr
Vgs=12V
--100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
Vgs(th )
Vds=Vgs,Id=-250µA -0.7
-1
-1.3
V
Vgs=-10V,Id=-4.2A
-51
55
Static Drain-Source On-Resistance
Vgs=-4.5V,Id=-4A
-60
65 mR
Rds(on)
Vgs=-2.5V,Id=-1A
-98
120
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
-600
-Vds=-30V,Vgs=0V
pF
Output Capacitance
Coss
-85
-f =200KHz
Reverse Transfer Capacitance
Crss
-66
-SWITCHING CHARACTERISTICS
Turn-On Delay Time
Td(on)
-6.5
-Rise Time
Tr
3.5
-Vds=-15V,Rl=3.6R, -ns
Vgs=-10V,Rgen=6R
Turn-Off Delay Time
Td(off)
-40
-Fall Time
Tf
-13
-DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Vsd
Is=-1A,Vgs=0V
-- -0.78 -1
V
Notes :
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the
case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is
guaranteed by design while RθCA is determined by the user's board design.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Page 2
V1.0
P-Channel Enhancement Mode MOSFET
BLM3401
P-channel Typical Performance Characteristics
Page 3
Vds, Drain-Source Voltage (V)
Figure 1. Output Characteristics
Vgs, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
Id, Drain Current (A)
Fig3. On Resistance vs. Drain Current
VDS, Drain-Source Voltage (V)
Fig4.Capacitance
Tj, Junction Temperature (℃)
Fig5. On resistance vs. Temperature
VDS, Drain-Source Voltage (V)
Fig6.Diode Forward Characteristics
V1.0
P-Channel Enhancement Mode MOSFET
Vgs, Gate-to-Source Voltage (V)
Fig7. On Resistance vs. G-S Voltage
Page 4
BLM3401
Tj, Junction Temperature (℃)
Fig8. Gate Threshold vs.Temperature
V1.0