Pb Free Product BLM8205B N-Channel Enhancement Mode Power MOSFET Description D1 The BLM8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate D2 G2 G1 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S2 S1 Schematic diagram General Features ● VDS = 20V,ID = 6A Typ.RDS(ON) = 16m Ω @ VGS=4.5V Typ.RDS(ON) = 19m Ω @ VGS=2.5V ● High power and current handing capability Marking and pin assignment ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch Top view ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width 8205B BLM8205B SOT23-6 Ø180mm 8mm 3000 units 8205B BLM8205B TSSOP-8 Ø330mm 12mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Quantity Limit Unit 20 V ±12 V 6 A 25 A 1.5 W -55 To 150 ℃ 83 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 - - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA Page1 www.belling.com.cn V2.2 Pb Free Product BLM8205B Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.5 0.7 1.2 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=4.5A - 16 22 mΩ VGS=2.5V, ID=3.5A - 19 27 mΩ VDS=5V,ID=4.5A - 10 - S - 900 - PF - 220 - PF - 100 - PF - 10 20 nS On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss VDS=10V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=10V,ID=1A - 11 25 nS td(off) VGS=4.5V,RGEN=6Ω - 35 70 nS - 30 60 nS - 12 15 nC - 2.3 - nC - 1 - nC - 0.75 1.2 V - - 1.7 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V,ID=6A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=1.7A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Page2 www.belling.com.cn V2.2 Pb Free Product BLM8205B Typical Electrical and Thermal Characteristics Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) Vout 90% VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output Characteristics Page3 Figure 6 Drain-Source On-Resistance www.belling.com.cn V2.2 Pb Free Product ID- Drain Current (A) Normalized On-Resistance BLM8205B TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge Page4 Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward www.belling.com.cn V2.2 Pb Free Product ID- Drain Current (A) BLM8205B Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance Page5 www.belling.com.cn V2.2 Pb Free Product BLM8205B SOT23-6L PACKAGE INFORMATION Page6 www.belling.com.cn V2.2 Pb Free Product BLM8205B TSSOP-8 Package Information Symbol D E b c E1 A A2 A1 e L H Θ Page7 Dimensions In Millimeters Min Max 2.900 3.100 4.300 4.500 0.190 0.300 0.090 0.200 6.250 6.550 1.100 0.800 1.000 0.020 0.150 0.65(BSC) 0.500 0.700 0.25(TYP) 1° 7° www.belling.com.cn V2.2