JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TO-92 TRANSISTOR（NPN） FEATURE 1.EMITTER Power Switching Applications 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 3. BASE Value Unit VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA,IC=0 6 V ICBO VCB= 600V,IE=0 100 µA ICEO VC(= 400V,IB=0 100 µA IEBO VEB= 6 V, IC=0 100 µA hFE1 VCE= 10 V, IC=200mA 9 hFE2 VCE= 10 V, IC=0.25mA 5 Collector cut-off current Emitter cut-off current Dc c urrent 40 gain Collector-emitter saturation voltage VCE(sat) IC=200mA, IB=40mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=200mA, IB=40mA 1.1 V Transition frequency fT Fall time tf Storage time ts VCE=10V, IC=100mA f =1MHz IC=1A, 5 MHz IB1=-IB2=0.2A VCC=100V 0.5 µs 2.5 µs CLASSIFICATION OF hFE1 Range 9-15 15-20 20-25 25-30 30-35 35-40 &,-XO,201 Typical Characteristics Static Characteristic 300 9mA hFE 10mA 8mA DC CURRENT GAIN (mA) IC —— IC COMMON EMITTER VCE= 10V 200 COLLECTOR CURRENT hFE 100 COMMON EMITTER Ta=25℃ 250 3DD13002B 7mA 150 6mA 5mA 100 4mA Ta=100℃ Ta=25℃ 10 3mA 50 2mA IB=1mA 0 1 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 12 14 1 IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— 800 100 IC (mA) IC β=5 β=5 Ta=25℃ 600 Ta=100 ℃ 400 200 0 0.1 1 10 100 COLLECTOR CURREMT IC —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.5 800 1 10 VBE fT 10 (mA) IC Ta=25℃ 8 TRANSITION FREQUENCY 10 T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC fT 100 —— IC COMMON EMITTER VCE=10V (MHz) COMMON EMITTER VCE=10V 800 100 COLLECTOR CURREMT (mA) 800 (mA) 10 COLLECTOR CURRENT VCE (V) 1 6 4 2 0.1 0 200 400 600 800 1000 0 20 1200 40 1000 Cob/Cib —— VCB/VEB 100 C (pF) COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ Cib CAPACITANCE PC 1200 f=1MHz IE=0/IC=0 Cob 10 1 0.1 60 80 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) —— 100 IC 120 (mA) Ta 900 600 300 0 1 REVERSE VOLTAGE 10 V (V) 30 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) &,-XO,201