JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002S TO-92 TRANSISTOR (NPN) FEATURES Power switching applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit 2. COLLECTOR VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.75 W Thermal Resistance from Junction to Ambient 167 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA 1 . EMITTER 3. BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 0.1mA,IC=0 Collector cut-off current ICBO VCB=600V,IE=0 100 Collector cut-off current ICEO VCE=400V,IB=0 100 uA Emitter cut-off current IEBO VEB=7V,IC=0 100 uA hFE(1) VCE=10V, IC=200mA 9 hFE(2) VCE=10V, IC=250uA 5 DC current gain 6 V 40 Collector-emitter saturation voltage VCE(sat) IC=200mA,IB=40mA 0.5 Base-emitter saturation voltage VBE(sat) IC=200mA,IB=40mA 1.1 fT tf tS Transition frequency Fall time Storage time VCE=10V, IC=100mA,f=1MHz uA 5 V V MHz IC=1A,IB1=IB2=0.2A,VCC=100V 0.5 us IC=1A,IB1=IB2=0.2A,VCC=100V 2.5 us CLASSIFICATION of hFE(1) Range 9-15 CLASSIFICATION of Rank Range www.cj-elec.com 15-20 20-25 25-30 30-35 35-40 VCE(sat) A B <0.25 0.25-0.45 1 C,Oct,2014 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.173 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 2 C,Oct,2014 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP3 C,Oct,2014