JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors JC(T 2SC4944 DUAL TRANSISTOR (NPN+NPN) SOT-353 Features z Small package (dual type) z High voltage and high current z High hFE, excellent hFE linearity z Complementary to 2SA1873 Marking: LY LGR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=2mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) IC=100mA,IB=10mA VCE=10V,IC=1mA fT 400 120 0.25 80 MHz 3.5 VCB=10V,IE=0,f=1MHz Cob V pF CLASSIFICATION OF hFE Rank Range Marking www.cj-elec.com Y GR 120-240 200-400 LY LGR 1 A,Jun,2014 D,Mar,2016 SOT-353 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.100 0.150 2.000 2.200 1.150 1.350 2.150 2.400 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Max Min 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.004 0.006 0.079 0.087 0.045 0.053 0.085 0.094 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-353 Suggested Pad Layout www.cj-elec.com 2 D,Mar,2016 SOT-353 Tape and Reel www.cj-elec.com 3 D,Mar,2016