JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC807U DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURE For AF input stages and drive applications High hFE Low VCE(sat) Tow (galvanic) internal isolated transistors with good matching in one package MARKING: S5B MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V Symbol Parameter IC Collector Current -0.5 A PC Collector Power Dissipation 0.3 W ℃/W Thermal Resistance from Junction to Ambient 417 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V Collector cut-off current ICBO VCB=-25V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 µA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency hFE(1) * hFE(2) * VCE=-1V, IC=-100mA 160 VCE=-1V, IC=-500mA 40 400 VCE(sat) * IC=-500mA, IB=-50mA -0.7 V VBE(sat) * IC=-500mA, IB=-50mA -1.2 V fT VCE=-5V,IC=-50mA,f=20MHz 200 MHz Collector-base capacitance Ccb VCB=-10V,f=1MHz 10 pF Emitter-base capacitance Ceb VEB=-0.5V,f=1MHz 60 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. www.cj-elec.com 1 B,Mar,2016 Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.cj-elec.com 2 Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.100 0.150 2.000 2.200 1.150 1.350 2.150 2.400 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.004 0.006 0.079 0.087 0.045 0.053 0.085 0.094 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° B,Mar,2016 www.cj-elec.com 3 B,Mar,2016