ACE7332M N-Channel 30-V (D-S) MOSFET Description The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. Key Features PRODUCT SUMMARY Low rDS(on) trench technology Low thermal impedance Fast switching speed VDS (V) rDS(on) (mΩ) ID(A) 13 @ VGS = 10V 14 18 @ VGS = 4.5V 12 30 Features VDS(V)=30V ID=15A (VGS=10V) RDS(ON)＜8.5mΩ (VGS=10V) RDS(ON)＜13mΩ (VGS=4.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS 30 V VGS ±20 V Gate-Source Voltage O TA=25 C Drain Current (Continuous) *AC O TA=70 C Drain Current (Pulse) *B ID IDM O Power Dissipation TA=25 C O TA=70 C Operating and Storage Temperature Range PD 15 12 A 50 3.5 W 2 O TJ,Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Packaging Symbol t <= 10 sec Steady State RθJA Max 35 81 Unit °C/W TypeOrdering information DFN3x3-8L ACE7332M XX + H Halogen - free Pb - free NN : DFN3*3-8L VER 1.1 1 ACE7332M N-Channel 30-V (D-S) MOSFET Electrical Characteristics Parameter Symbol Conditions Min. Typ. Max Unit Static Gate-Source Threshold Voltage Gate-Body Leakage Zero ate Voltage Drain Current VGS(th) VDS = VGS, ID = 250 uA IGSS VDS = 0 V, VGS = ±20V ±100 VDS = 24 V, VGS = 0 V 1 IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea RDS(ON) Forward Transconductancea Diode Forward Voltagea 1 V uA VDS = 24 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V 25 20 A VGS = 10 V, ID = 11 A 13 VGS = 4.5 V, ID =8.8A 18 VDS =15 V, ID = 11 A 25 S VSD IS = 2.6A, VGS = 0 V 0.74 V b Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 17 Turn-On Delay Time td(on) 15 Rise Time tr Turn-Off Delay Time td(off) Fall Time tf 54 Input Capacitance Ciss 1456 Output Capacitance Coss Capacitance mΩ gFS Dynamic Reverse Transfer nA 25 VDS = 15 V, VGS = 4.5 ID =11 A VDS = 15 V, RL = 1.4 Ω, ID = 11 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 MHz Crss 11 nC 13 ns 100 231 pF 198 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing VER 1.1 2 ACE7332M N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics VER 1.1 3 ACE7332M N-Channel 30-V (D-S) MOSFET VER 1.1 4 ACE7332M N-Channel 30-V (D-S) MOSFET Packing Information DFN3*3-8L U Unit: mm VER 1.1 5 ACE7332M N-Channel 30-V (D-S) MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6