ACE2320M N-Channel 20-V MOSFET Description ACE2320M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology Applications • • • White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Continuous Parameter Symbol Limit Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V TA=25℃ Drain Current a TA=70℃ ID 7.0 5.5 A Pulsed Drain Current b IDM 20 A Continuous Source Current (Diode Conduction) a IS 1.9 A TA=25℃ Power Dissipation a TA=70℃ Operating temperature / storage temperature PD 1.3 0.8 TJ/TSTG -55~150 W ℃ THERMAL RESISTANCE RATINGS Symbol Parameter Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA Maximum 100 166 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 ACE2320M N-Channel 20-V MOSFET Packaging Type SOT-23-3 Ordering information ACE2320M BM + H Halogen - free Pb - free BM : SOT-23-3 VER 1.1 2 ACE2320M N-Channel 20-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA Gate-Body Leakage IGSS VDS = 0 V, VGS = ±8 V ±10 Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 IDSS On-State Drain Current Drain-Source On-Resistance A A Diode Forward Voltage Min Typ VDS = 5 V, VGS = 10 V RDS(ON) Max Unit 1 V VDS = 16V, VGS = 0 V, TJ = 55°C ID(on) A Forward Transconductance Test Conditions Static 25 10 nA uA A VGS = 4.5V, ID = 5.6 A 18 VGS = 2.5 V, ID = 4.5 A 21 mΩ gFS VDS =15 V, ID = 5.6 A 12 S VSD IS = 1 A, VGS = 0 V 0.69 V Dynamic b Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.8 Turn-On Delay Time td(on) 367 Rise Time tr VDS = 10 V, RL = 1.8 Ω, ID = 5.6 A, 1337 Turn-Off Delay Time td(off) VGEN = 4.5 V, RGEN = 6Ω, 4697 Fall Time tf 3037 Input Capacitance Ciss 628 Output Capacitance Coss ReverseTransfer Capacitance Crss 11 VDS = 10V, VGS = 4.5 V, ID = 5.6 A VDS = 15 V, VGS = 0 V, f =1 MHz 1.9 nC ns 105 99 Note : a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing VER 1.1 3 ACE2320M N-Channel 20-V MOSFET Typical Performance Characteristics (N-Channel) ID-Drain Current (A) 1. On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage VDS - Drain-to-Source Voltage (V) 5. Output Characteristics VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage VDS-Drain-to-Source Voltage (V) 6. Capacitance VER 1.1 4 ACE2320M N-Channel 20-V MOSFET Typical Performance Characteristics Qg - Total Gate Charge (nC) 7. Gate Charge VDS Drain to Source Voltage (V) 9. Safe Operating Area TJ –Junction Temperature(°C) 8. Normalized On-Resistance Vs Junction Temperature t1 TIME (SEC) 10. Single Pulse Maximum Power Dissipation t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient VER 1.1 5 ACE2320M N-Channel 20-V MOSFET Packing Information SOT-23-3 SYMBOLS A A1 A2 b C D E E1 e e1 L L1 L2 R Θ Θ1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.01 0.10 0.85 0.90 0.925 0.30 0.40 0.50 0.10 0.15 0.25 2.70 2.90 3.10 2.60 2.80 3.00 1.4 1.60 1.80 0.95 BSC 1.90 BSC 0.30 0.40 0.60 0.60REF 0.25BSC 0.10 0° 4° 8° 7°NOM nit: mm VER 1.1 6 ACE2320M N-Channel 20-V MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7