ACE7402A N-Channel Enhancement Mode MOSFET Description The ACE7402A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features • • • • • 20V/4.0A, RDS(ON)=65mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=80mΩ@VGS=2.5V 20V/2.8A, RDS(ON) =95mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability Application • • • • • • • Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter VER 1.1 1 ACE7402A N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V TA=25℃ Continuous Drain Current (TJ=150℃) TA=70℃ ID 2.4 A 1.7 Pulsed Drain Current IDM 6 A Continuous Source Current (Diode Conduction) IS 1.6 A TA=25℃ Power Dissipation TA=70℃ Operating Junction Temperature PD TJ 0.33 W 0.21 -55/150 O C O C Storage Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 105 O C/W Packaging Type SOT-323 3 SOT-323 Description 1 2 1 Gate 2 Source 3 Drain Ordering information ACE7402A CM + H Halogen - free Pb - free CM : SOT-323 VER 1.1 2 ACE7402A N-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current V(BR)DSS VGS=0V, ID=250uA 20 VGS(th) VDS=VGS, ID=250uA 0.35 IGSS VDS=0V,VGS=±12V ±100 VDS=20V, VGS=0V 1 VDS=20V, VGS=0V TJ=55℃ 5 IDSS VDS≧5V, VGS=4.5V V 0.85 6 nA uA A VGS=4.5V, ID=4.0A 0.060 0.065 VGS=2.5V, ID=3.4A 0.067 0.080 VGS=1.8V, ID=2.8A 0.076 0.095 Drain-Source On-Resistance RDS(ON) Forward Transconductance Gfs VDS=5V,ID=-3.6A 10 Diode Forward Voltage VSD IS=1.6A, VGS=0V 0.8 1.2 4.8 8 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.0 Input Capacitance Ciss 485 Output Capacitance Reverse Transfer Capacitance Coss Turn-On Time Turn-Off Time VDS=6V, VGS=4.5V, ID=2.8A VDS=6V, VGS=0V, f=1MHz 1.0 nC 85 pF Crss 40 td(on) 8 14 12 18 30 35 12 16 tr td(off) tf VDD=6V, RL=6Ω, VGEN=4.5V, ID=1.0A ,RG=6Ω VER 1.1 nS 3 ACE7402A N-Channel Enhancement Mode MOSFET Typical Performance Characteristics Output Characteristics VDS-Drain-to-Source Voltage (V) On-Resistance vs. Drain Current ID-Drain Current (A) Gate Charge Qg-Total Gate Charge (nC) Transfer Characteristics VGS-Gate-to-Source Voltage (V) Capacitance VDS-Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature TJ-Junction Temperature (℃) VER 1.1 4 ACE7402A N-Channel Enhancement Mode MOSFET Typical Performance Characteristics Source-Drain Diode Forward Voltage VSD-Source-to-Drain Voltage (V) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage VGS-Gate-to-Source Voltage (V) Single Pulse Power (Jumction-to-Ambient) TJ-Temperature(℃) Time (sec) Normalized Thermal Transient Impedance, Junction-to Foot Square Wave Pulse Duration (sec) VER 1.1 5 ACE7402A N-Channel Enhancement Mode MOSFET Packing Information SOT-323 VER 1.1 6 ACE7402A N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7