ACE7402A (VER1.1)

ACE7402A
N-Channel Enhancement Mode MOSFET
Description
The ACE7402A is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits where high-side switching, and low
in-line power loss are needed in a very small outline surface mount package.
Features
•
•
•
•
•
20V/4.0A, RDS(ON)[email protected]=4.5V
20V/3.4A,RDS(ON)[email protected]=2.5V
20V/2.8A, RDS(ON) [email protected]=1.8V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
Application
•
•
•
•
•
•
•
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
VER 1.1
1
ACE7402A
N-Channel Enhancement Mode MOSFET
Absolute Maximum Ratings
Parameter
Symbol Max
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
TA=25℃
Continuous Drain Current (TJ=150℃)
TA=70℃
ID
2.4
A
1.7
Pulsed Drain Current
IDM
6
A
Continuous Source Current (Diode Conduction)
IS
1.6
A
TA=25℃
Power Dissipation
TA=70℃
Operating Junction Temperature
PD
TJ
0.33
W
0.21
-55/150
O
C
O
C
Storage Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
105
O
C/W
Packaging Type
SOT-323
3
SOT-323 Description
1
2
1
Gate
2
Source
3
Drain
Ordering information
ACE7402A CM + H
Halogen - free
Pb - free
CM : SOT-323
VER 1.1
2
ACE7402A
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS=0V, ID=250uA
20
VGS(th)
VDS=VGS, ID=250uA
0.35
IGSS
VDS=0V,VGS=±12V
±100
VDS=20V, VGS=0V
1
VDS=20V, VGS=0V TJ=55℃
5
IDSS
VDS≧5V, VGS=4.5V
V
0.85
6
nA
uA
A
VGS=4.5V, ID=4.0A
0.060 0.065
VGS=2.5V, ID=3.4A
0.067 0.080
VGS=1.8V, ID=2.8A
0.076 0.095
Drain-Source
On-Resistance
RDS(ON)
Forward Transconductance
Gfs
VDS=5V,ID=-3.6A
10
Diode Forward Voltage
VSD
IS=1.6A, VGS=0V
0.8
1.2
4.8
8
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1.0
Input Capacitance
Ciss
485
Output Capacitance
Reverse Transfer
Capacitance
Coss
Turn-On Time
Turn-Off Time
VDS=6V, VGS=4.5V, ID=2.8A
VDS=6V, VGS=0V, f=1MHz
1.0
nC
85
pF
Crss
40
td(on)
8
14
12
18
30
35
12
16
tr
td(off)
tf
VDD=6V, RL=6Ω, VGEN=4.5V,
ID=1.0A ,RG=6Ω
VER 1.1
nS
3
ACE7402A
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
Output Characteristics
VDS-Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
ID-Drain Current (A)
Gate Charge
Qg-Total Gate Charge (nC)
Transfer Characteristics
VGS-Gate-to-Source Voltage (V)
Capacitance
VDS-Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
TJ-Junction Temperature (℃)
VER 1.1
4
ACE7402A
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
Source-Drain Diode Forward Voltage
VSD-Source-to-Drain Voltage (V)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
VGS-Gate-to-Source Voltage (V)
Single Pulse Power (Jumction-to-Ambient)
TJ-Temperature(℃)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to Foot
Square Wave Pulse Duration (sec)
VER 1.1
5
ACE7402A
N-Channel Enhancement Mode MOSFET
Packing Information
SOT-323
VER 1.1
6
ACE7402A
N-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
7