ACE4490M N-Channel 100-V MOSFET Description The ACE4490M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features • • • Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications • • • • PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters Absolute Maximum Ratings Continuous Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TA=25℃ Drain Current a ID TA=70℃ Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25℃ Power Dissipation a TA=70℃ Operating temperature / storage temperature 5.2 4.4 A IDM 50 A IS 3 A PD 3.1 2.2 TJ/TSTG -55~150 W ℃ THERMAL RESISTANCE RATINGS Symbol Parameter Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA Maximum 40 80 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 ACE4490M N-Channel 100-V MOSFET Packaging Type SOP-8 Ordering information ACE4490M FM + H Halogen - free Pb - free FM : SOP-8 VER 1.1 2 ACE4490M N-Channel 100-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA Gate-Body Leakage IGSS IDSS Zero Gate Voltage Drain Current Test Conditions Static Min Typ Max Unit 1 3.5 V VDS = 0 V, VGS = 20 V ±100 nA VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 55°C On-State Drain Current ID(on) VDS = 5 V, VGS = 10 V Drain-Source On-Resistance RDS(ON) 25 20 uA A VGS = 10 V, ID = 3.6 A 78 VGS = 4.5 V, ID = 3.3 A 92 mΩ Forward Transconductance gFS VDS = 15 V, ID = 3.6 A 22 S Diode Forward Voltage VSD IS = 1.5 A, VGS = 0 V 0.7 V Dynamic 17.7 Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 11.1 Turn-On Delay Time td(on) 7 Rise Time tr VDS = 50 V, RL = 13.9 Ω, ID = 3.6 A, VGEN 5.8 Turn-Off Delay Time td(off) = 10 V, RGEN = 6 Ω 46 Fall Time tf 26 Input Capacitance Ciss 990 Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 50 V, VGS = 4.5 V, ID = 3.6 A VDS = 15 V, VGS = 0 V, f = 1 MHz 2.7 nC ns 115 pF 77 Note : a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing VER 1.1 3 ACE4490M N-Channel 100-V MOSFET Typical Performance Characteristics ID-Drain Current (A) 1. On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage VDS - Drain-to-Source Voltage (V) 5. Output Characteristics VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage VDS-Drain-to-Source Voltage (V) 6. Capacitance VER 1.1 4 ACE4490M N-Channel 100-V MOSFET Typical Performance Characteristics Qg - Total Gate Charge (nC) 7. Gate Charge VDS Drain to Source Voltage (V) 9. Safe Operating Area TJ -JunctionTemperature(°C) 8. Normalized On-Resistance Vs Junction Temperature t1 TIME (SEC) 10. Single Pulse Maximum Power Dissipation t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient VER 1.1 5 ACE4490M N-Channel 100-V MOSFET Packing Information SOP-8 DIM MILLMETERS MIN NOM MAX A 1.35 1.55 1.75 A(1) 0.10 0.18 0.25 B 0.38 0.45 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E 3.80 3.90 4.00 e 1.27 BSC H 5.8 6.00 6.20 L 0.50 0.72 0.93 0 a 0 4 8 h 0.25 0.38 0.50 Unit: mm VER 1.1 6 ACE4490M N-Channel 100-V MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7