ACE25Q800G (VER 1.1)

ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Description
The ACE25Q800G is 8M-bit Serial Peripheral Interface(SPI) Flash memory, and supports the
Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (/WP), and I/O3 (/HOLD).
The Dual I/O data is transferred with speed of 216Mbits/s and the Quad I/O & Quad output data is
transferred with speed of 434Mbits/s. The device uses a single low voltage power
supply, ranging from 2.7 Volt to 3.6 Volt.
Additionally, the device supports JEDEC standard manufacturer and device ID and three
256-bytes Security Registers..
Features
● Serial Peripheral Interface (SPI)
- Standard SPI: SCLK, /CS, SI, SO, /WP, /HOLD
- Dual SPI: SCLK, /CS, IO0, IO1, /WP, /HOLD
- Quad SPI: SCLK, /CS, IO0, IO1, IO2, IO3
● Read
- Normal Read (Serial): 50MHz clock rate
- Fast Read (Serial): 108MHz clock rate
- Dual/Quad (Multi-I/O) Read: 108MHz clock rate
● Program
- Serial-input Page Program up to 256bytes
-Program Suspend and Resume
● Erase
- Block erase (64/32 KB)
- Sector erase (4 KB)
- Chip erase
- Erase Suspend and Resume
● Program/Erase Speed
- Page Program time: 0.7ms typical
- Sector Erase time: 60ms typical
- Block Erase time: 0.2/0.4s typical
- Chip Erase time: 7s typical
● Flexible Architecture
-Sector of 4K-byte
-Block of 32/64K-byte
● Low Power Consumption
- 20mA maximum active current
- 5uA maximum power down current
VER 1.1
1
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
● Software/Hardware Write Protection
- 3x256-Byte Security Registers with OTP Lock
- Enable/Disable protection with WP Pin
- Write protect all/portion of memory via software
- Top or Bottom, Sector or Block selection
● Single Supply Voltage
- Full voltage range: 2.7~3.6V
● Temperature Range
- Commercial (0℃to +70℃)
- Industrial (-40℃ to +85℃)
● Cycling Endurance/Data Retention
- Typical 100k Program-Erase cycles on any sector
- Typical 20-year data retention at +55℃
Packaging Type
VER 1.1
2
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Signal Names
Table 1
Pin No
Pin Name
I/O
1
/CS
I
2
SO (IO1)
I/O
Description
Chip Select
Serial Output for single bit data Instructions. IO1 for Dual or Quad
Instructions.
Write Protect in single bit or Dual data Instructions. IO2 in Quad mode.
3
/WP (IO2)
I/O
The signal has an internal pull-up resistor and may be left unconnected in
the host system if not used for Quad Instructions.
4
VSS
5
SI (IO0)
6
SCLK
Ground
I/O
I
Serial Input for single bit data Instructions. IO0 for Dual or Quad
Instructions.
Serial Clock
Hold (pause) serial transfer in single bit or Dual data Instructions. IO3 in
7
/HOLD# (IO3)
I/O
Quad-I/O mode. The signal has an internal pull-up resistor and may be
left unconnected in the host system if not used for Quad Instructions.
8
VCC
Core and/ O Power Supply
Ordering information
ACE25Q800G UX8 + X
H
Halogen-free
U: Tube
T: Tape and Reel
Pb - free
UA8: USON8 3*2 (0.50mm-0.50mm)
UC8A: USON8 3*3 (0.75mm-0.65mm)
UC8B: USON8 3*3 (0.45mm-0.50mm)
UD8: USON8 4*4 (0.45mm-0.80mm)
800:8M bit
VER 1.1
3
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Uniform Block Sector Architecture
Table 2 ACE25Q800G Block/Sector Addresses
Memory
Density
Block(64kbyte)
Block(32kbyte)
Sector
Size(KB)
Address range
Sector 0
4
000000h-000FFFh
Sector 7
Sector 8
007000h-007FFFh
008000h-008FFFh
Sector 15
Sector 16
4
4
4
4
4
Sector 23
Sector 24
4
4
017000h-017FFFh
018000h-018FFFh
Sector 31
4
01F000h-01FFFFh
Sector 224
4
0E0000h-0E0FFFh
Sector 231
Sector 232
4
4
0E7000h-0E7FFFh
0E8000h-0E8FFFh
Sector 239
Sector 240
4
4
0EF000h-0EFFFFh
0F0000h-0F0FFFh
Sector 247
Sector 248
4
4
0F7000h-0F7FFFh
0F8000h-0F8FFFh
Sector 255
4
0FF000h-0FFFFFh
Sector No.
Half block 0
Block 0
Half block 1
000000h-000FFFh
010000h-010FFFh
Half block 2
Block1
Half block 3
8M Kbit
Half block 28
Block 14
Half block 29
Half block 30
Block 15
Half block 31
Notes:
1.
Block = Uniform Block, and the size is 64K bytes.
2.
Half block = Half Uniform Block, and the size is 32k bytes.
3.
Sector = Uniform Sector, and the size is 4K bytes.
VER 1.1
4
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Device Operation
Standard SPI Instructions
The ACE25Q800G features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip
Select (/CS), Serial Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are
supported. Input data is latched on the rising edge of SCLK and data shifts out on the falling edge of
SCLK.
Dual SPI Instructions
The ACE25Q800G supports Dual SPI operation when using the “Dual Output Fast Read” and “Dual
I/O Fast Read” (3BH and BBH) instructions. These instructions allow data to be transferred to or from
the device at two times the rate of the standard SPI. When using the Dual SPI instruction the SI and
SO pins become bidirectional I/O pins: IO0 and IO1.
Quad SPI Instructions
The ACE25Q800G supports Quad SPI operation when using the “Quad Output Fast Read”, “Quad I/O
Fast Read” (6BH, EBH) instructions. These instructions allow data to be transferred t-o or from the
device at four times the rate of the standard SPI. When using the Quad SPI instruction the SI and SO
pins become bidirectional I/O pins: IO0 and IO1, and /WP and /HOLD pins become IO2 and IO3.
Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set.
Operation Features
Supply Voltage
Operating Supply Voltage
Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage within the specified
[VCC(min), VCC(max)] range must be applied (see operating ranges of page 37). In order to secure a stable DC
supply voltage, it is recommended to decouple the VCC line with a suitable capacitor (usually of the order of 10nF to
100nF) close to the VCC/VSS package pins. This voltage must remain stable and valid until the end of the transmission
of the instruction and, for a Write instruction, until the completion of the internal write cycle (tW).
Power-up Conditions
When the power supply is turned on, VCC rises continuously from VSS to VCC. During this time, the Chip Select (/CS)
line is not allowed to float but should follow the VCC voltage, it is therefore recommended to connect the /CS line to
VCC via a suitable pull-up resistor.
In addition, the Chip Select (/CS) input offers a built-in safety feature, as the /CS input is edge sensitive as well as level
sensitive: after power-up, the device does not become selected until a falling edge has first been detected on Chip
Select (/CS). This ensures that Chip Select (/CS) must have been High, prior to going Low to start the first operation.
Device Reset
In order to prevent inadvertent Write operations during power-up (continuous rise of VCC), a power on reset (POR)
circuit is included. At Power-up, the device does not respond to any instruction until VCC has reached the power on
reset threshold voltage (this threshold is lower than the minimum VCC operating voltage defined in operating ranges of
page 37).
When VCC has passed the POR threshold, the device is reset.
VER 1.1
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Power-down
At Power-down (continuous decrease in VCC), as soon as VCC drops from the normal operating voltage to below the
power on reset threshold voltage, the device stops responding to any instruction sent to it. During Power-down, the
device must be deselected (Chip Select (/CS) should be allowed to follow the voltage applied on VCC) and in Standby
Power mode (that is there should be no internal Write cycle in progress).
Active Power and Standby Power Modes
When Chip Select (/CS) is Low, the device is selected, and in the Active Power mode. The device consumes ICC.
When Chip Select (/CS) is High, the device is deselected. If a Write cycle is not currently in progress, the device then
goes in to the Standby Power mode, and the device consumption drops to ICC1.
Hold Condition
The Hold (/HOLD) signal is used to pause any serial communications with the device without resetting the clocking
sequence. During the Hold condition, the Serial Data Output (SO) is high impedance, and Serial Data Input (SI) and
Serial Clock (SCLK) are Don’t Care. To enter the Hold condition, the device must be selected, with Chip Select (/CS)
Low. Normally, the device is kept selected, for the whole duration of the Hold condition. Deselecting the device while it is
in the Hold condition, has the effect of resetting the state of the device, and this mechanism can be used if it is required
to reset any processes that had been in progress.
The Hold condition starts when the Hold (/HOLD) signal is driven Low at the same time as Serial
Clock (SCLK) already being Low (as shown in Figure 1)
The Hold condition ends when the Hold (HOLD) signal is driven High at the same time as Serial Clock (C) already
being Low. Also shows what happens if the rising and falling edges are not timed to coincide with Serial Clock (SCLK)
being Low.
Figure 1 Hold condition activation
Figure 1
VER 1.1
6
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Status Register
Status Register Table
See Table 3 and Table 4 for detail description of the Status Register bits. Status Register-2 (SR2)
and Status Register-1 (SR1) can be used to provide status on the availability of the Flash memory
array, if the device is write enabled or disabled the state of write protection, Quad SPI setting, Security
Register lock status, and Erase/Program Suspend status.
Table 3 Status Register-2 (SR2)
BIT
Name
7
SUS
6
CMP
5
4
3
LB3
LB2
LB1
Suspend
Status
Complement
Protect
Security
Register
Lock Bits
2
Reserved
Reserved
1
0
QE
SRP1
Function
Quad Enable
Status
Resister
Protect 1
Default
Value
0
0
0
0
0
Description
0
1
0
1
=
=
=
=
Erase/Program not suspended
Erase/Program suspended
Normal Protection Map
Inverted Protection Map
OTP Lock Bits 3:1 for Security Registers 3:1
0 = Security Register not protected
0
0
0
0 = Quad Mode Not Enabled, the /WP pin and /HOLD
are enabled.
1 = Quad Mode Enabled, the IO2 and IO3 pins are
enabled, and /WP and /HOLD functions are disabled
0 = SRP0 selects whether /WP input has effect on
protection of the status register
1 = SRP0 selects Power Supply Lock Down or OTP
Lock Down mode
VER 1.1
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Table 4 Status Register-1 (SR1)
BIT
Name
Function
Default Value
7
SRP0 Status Resister Protect 0
0
6
SEC
Sector/Block Protect
0
5
TB
Top/Bottom Protect
4
3
2
BP2
BP1
BP0
Block Protect Bits
0
0
0
0
1
WEL
Write Enable Latch
0
0
WIP
Write in Progress Status
0
Description
0 = /WP input has no effect or Power Supply Lock
Down mode
1 = /WP input can protect the Status Register or
OTP Lock Down
0 = BP2-BP0 protect 64KB blocks
1 = BP2-BP0 protect 4KB sectors
0 = BP2-BP0 protect from the Top down
1 = BP2-BP0 protect from the Bottom up
000b = No protection
See Table 6 and Table 7 for protection ranges
0 = Not Write Enabled, no embedded operation
can start
1 = Write Enabled, embedded operation can start
0 = Not Busy, no embedded operation in progress
1 = Busy, embedded operation in progress
The Status and Control Bits
WIP bit
The Write in Progress (WIP) bit indicates whether the memory is busy in program/erase/write status
register progress. When WIP bit sets to 1, means the device is busy in program/erase/write status
register progress, when WIP bit sets 0, means the device is not in program/erase/write status register
progress.
WEL bit
The Write Enable Latch bit indicates the status of the internal Write Enable Latch. When set to 1 the
internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write
Status Register, Program or Erase instruction is accepted.
SEC, TB, BP2, BP1, BP0 bits
The Block Protect (SEC, TB, BP2, BP1, BP0) bits are non-volatile. They define the size of the area
to be software protected against Program and Erase instructions. These bits are written with the Write
Status Register instruction. When the Block Protect (SEC, TB, BP2, BP1, BP0) bits are set to 1, the
relevant memory area (as defined in Table 6).becomes protected against Page Program, Sector
Erase and Block Erase instructions. The Block Protect (SEC, TB, BP2, BP1, BP0) bits can be written
provided that the Hardware Protected mode has not been set.
VER 1.1
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
SRP1, SRP0 bits
The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status
register. The SRP bits control the method of write protection: software protection, hardware protection,
power supply lock-down or one time programmable protection.
QE bit
The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad
operation. When the QE bit is set to 0 (Default) the /WP pin and /HOLD pin are enable. When the QE
pin is set to 1, the Quad IO2 and IO3 pins are enabled. (The QE bit should never be set to 1 during
standard SPI or Dual SPI operation if the /WP or /HOLD pins directly to the power supply or ground).
LB3/LB2/LB1 bit
The LB bit is a non-volatile One Time Program (OTP) bit in Status Register that provide the write
protect control and status to the Security Registers. The default state of LB is 0, the security registers
are unlocked. LB can be set to 1 individually using the Write Register instruction. LB is One Time
Programmable, once it’s set to 1, the 256byte Security Registers will become read-only permanently,
LB3/2/1 for Security Registers 3:1.
CMP bit
The CMP bit is a non-volatile Read/Write bit in the Status Register2 (bit6). It is used in conjunction the
SEC-BP0 bits to provide more flexibility for the array protection. Please see the Status registers
Memory Protection table for details. The default setting is CMP=0.
SUS bit
The SUS bit is a read only bit in the status register2 (bit7) that is set to 1 after executing an
Erase/Program Suspend (75H) instruction. The SUS bit is cleared to 0 by Erase/Program Resume
(7AH) instruction as well as a power-down, power-up cycle.
Status Register Protect Table (Table5)
SRP1
SRP0
/WP
Status Register
Description
0
0
X
Software
Protected
The Status Register can be written to after a Write
Enable instruction, WEL=1.(Factory Default)
0
1
0
Hardware
Protected
/WP=0, the Status Register locked and cannot be
written.
0
1
1
Hardware
Unprotected
1
0
X
Power Supply
Lock-Down(1)
1
1
X
One Time
Program(2)
/WP=1, the Status Register is unlocked and can be written
to after a Write Enable instruction, WEL=1.
Status Register is protected and cannot be written
To again until the next Power-Down, Power-Up cycle.
Status Register is permanently protected and cannot be
written to.
Notes:
1.
When SRP1, SRP0= (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0) state.
2.
The One time Program feature is available upon special order. Please contact ACE for details.
VER 1.1
9
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Write Protect Features
1. Software Protection: The Block Protect (SEC, TB, BP2, BP1, BP0) bits define the section of the
memory array that can be read but not change.
2.Hardware Protection: /WP going low to protected the BP0~SEC bits and SRP0~1 bits.
3.Deep Power-Down: In Deep Power-Down Mode, all instructions are ignored except the
Release from deep Power-Down Mode instruction.
4.Write Enable: The Write Enable Latch (WEL) bit must be set prior to every Page Program, Sector
Erase, Block Erase, Chip Erase, Write Status Register and Erase/Program Security Registers
instruction.
Status Register Memory Protection
Protect Table
Table 6 ACE25Q800G Status Register Memory Protection (CMP=0)
Status Register Content
Memory Content
SEC
TB
BP2
BP1
BP0
Blocks
Addresses
Density
Portion
X
X
0
0
0
NONE
NONE
NONE
NONE
0
0
0
0
1
15
0F0000H-0FFFFFH
64KB
Upper 1/6
0
0
0
1
0
14 to 15
0E0000H-0FFFFFH
128KB
Upper 1/8
0
0
0
1
1
12 to 15
0C0000H-0FFFFFH
256KB
Upper 1/4
0
0
1
0
0
8 to 15
080000H-0FFFFFH
512KB
Upper 1/2
0
1
0
0
1
0
000000H-00FFFFH
64KB
Lower 1/16
0
1
0
1
0
0 to 1
000000H-01FFFFH
128KB
Lower 1/8
0
1
0
1
1
0 to 3
000000H-03FFFFH
256KB
Lower 1/4
0
1
1
0
0
0 to 7
000000H-07FFFFH
512KB
Lower 1/2
0
X
1
0
1
0 to 15
000000H-0FFFFFH
1MB
ALL
X
X
1
1
X
0 to 15
0FF000H-0FFFFFH
1MB
ALL
1
0
0
0
1
15
0FE000H-0FFFFFH
4KB
Top Block
1
0
0
1
0
15
0FC000H-0FFFFFH
8KB
Top Block
1
0
0
1
1
15
0F8000H-0FFFFFH
16KB
Top Block
1
0
1
0
X
15
000000H-000FFFH
32KB
Top Block
1
1
0
0
1
0
000000H-03FFFFH
4KB
Bottom Block
1
1
0
1
0
0
000000H-001FFFH
8KB
Bottom Block
1
1
0
1
1
0
000000H-003FFFH
16KB
Bottom Block
1
1
1
0
X
0
000000H-007FFFH
32KB
Bottom Block
VER 1.1
10
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Table 7 ACE25Q800G Status Register Memory Protection(CMP=1)
Status Register Content
Memory Content
SEC
TB
BP2
BP1
BP0
Blocks
Addresses
Density
Portion
X
X
0
0
0
0 to 15
000000H-0FFFFFH
1MB
ALL
0
0
0
0
1
0 to 14
000000H-0EFFFFH
960KB
Lower 15/16
0
0
0
1
0
0 to 13
000000H-0DFFFFH
896KB
Lower 7/8
0
0
0
1
1
0 to 11
000000H-0BFFFFH
768KB
Lower 3/4
0
0
1
0
0
0 to 7
000000H-07FFFFH
512KB
Lower 1/2
0
1
0
0
1
1 to 15
010000H-0FFFFFH
960KB
Upper 15/16
0
1
0
1
0
2 to 15
020000H-0FFFFFH
896KB
Upper 7/8
0
1
0
1
1
4 to 15
040000H-0FFFFFH
768KB
Upper 3/4
0
1
1
0
0
8 to 15
080000H-0FFFFFH
512KB
Upper 1/2
0
X
1
0
1
NONE
NONE
NONE
NONE
X
X
1
1
X
NONE
NONE
NONE
NONE
1
0
0
0
1
0 to 15
000000H-0FEFFFH
1020KB
L-255/256
1
0
0
1
0
0 to 15
000000H-0FDFFFH
1016KB
L-127/128
1
0
0
1
1
0 to 15
000000H-0FBFFFH
1008KB
L-163/64
1
0
1
0
X
0 to 15
000000H-0F7FFFH
992KB
L-31/32
1
1
0
0
1
0 to 15
001000H-0FFFFFH
1020KB
U-255-256
1
1
0
1
0
0 to 15
002000H-0FFFFFH
1016KB
U-127/128
1
1
0
1
1
0 to 15
004000H-0FFFFFH
1008KB
U-63/64
1
1
1
0
X
0 to 15
008000H-0FFFFFH
992KB
U-31/32
Device Identification
Three legacy Instructions are supported to access device identification that can indicate the
manufacturer, device type, and capacity (density). The returned data bytes provide the information as
shown in the below table.
Table 8 ACE25Q800G ID Definition table
Operation Code
M7-M0
ID15-ID8
ID7-ID0
9FH
90H
ABH
E0
E0
40
14
13
13
VER 1.1
11
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Instructions Description
All instructions, addresses and data are shifted in and out of the device, beginning with the most
significant bit on the first rising edge of SCLK after /CS is driven low. Then, the one byte instruction
code must be shifted in to the device, most significant bit first on SI, each bit being latched on the
rising edges of SCLK.
See Table 9, every instruction sequence starts with a one-byte instruction code. Depending on the
instruction, this might be followed by address bytes, or by data bytes, or by both or none. /CS must be
driven high after the last bit of the instruction sequence has been shifted in. For the instruction of
Read, Fast Read, Read Status Register or Release from Deep Power Down, and Read Device ID, the
shifted-in instruction sequence is followed by a data out sequence. /CS can be driven high after any
bit of the data-out sequence is being shifted out.
For the instruction of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register,
Write Enable, Write Disable or Deep Power-Down instruction, /CS must be driven high exactly at a
byte boundary, otherwise the instruction is rejected, and is not executed. That is /CS must driven high
when the number of clock pulses after /CS being driven low is an exact multiple of eight. For Page
Program, if at any time the input byte is not a full byte, nothing will happen and WEL will not be reset.
VER 1.1
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Instruction Set Table
Table 9
Instruction Name
Byte 1
Write Enable
06H
Write Disable
04H
Read Status Register-1
05H
(S7-S0)
Read Status Register-2
35H
(S15-S8)
Write Enable for Volatile
Status Register
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
50H
Write Status Register
01H
(S7-S0)
(S15-S8)
Read Data
03H
A23-A16
A15-A8
A7-A0
(D7-D0)
Next byte
Fast Read
0BH
A23-A16
A15-A8
A7-A0
dummy
(D7-D0)
Dual Output Fast Read
3BH
A23-A16
A15-A8
A7-A0
dummy
(D7-D0)(1)
Dual I/O Fast Read
BBH
A23-A8(2)
A7-A0 M7-M0(2)
(D7-D0)(1)
Quad Output Fast Read
6BH
A23-A16
A15-A8
A7-A0
dummy
(D7-D0)(3)
Quad I/O Fast Read
EBH
A23-A0
M7-M0(4)
dummy
(D7-D0)(5)
Set Burst with Wrap
77h
dummy
dummy
dummy
W8-W0
Continuous Read Reset
FFH
FFH
Page Program
02H
A23-A16
A15-A8
A7-A0
(D7-D0)
Sector Erase
20H
A23-A16
A15-A8
A7-A0
Block Erase(32K)
52H
A23-A16
A15-A8
A7-A0
Block Erase(64K)
D8H
A23-A16
A15-A8
A7-A0
Next byte
VER 1.1
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Instruction Name
Byte 1
Chip Erase
C7/60H
Program/Erase Suspend
75H
Program/Erase Resume
7AH
Deep Power-Down
B9H
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
dummy
dummy
dummy
(ID7-ID0)
(M7-M0)
(ID7-ID0)
Release From Deep
Power-Down,
ABH
And Read Device ID
Release From
Deep Power-Down
ABH
Manufacturer/ Device ID
90H
dummy
dummy
00H
JEDEC ID
9FH
(M7-M0)
(ID15-ID8)
(ID7-ID0)
Erase Security Registers(6)
44H
A23-A16
A15-A8
A7-A0
Program Security Registers(6)
42H
A23-A16
A15-A8
A7-A0
(D7-D0)
(D7-D0)
Read Security Registers(6)
48H
A23-A16
A15-A8
A7-A0
dummy
(D7-D0)
Enable Reset
7Eh
Reset Device
99h
VER 1.1
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Notes:
1. Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8, A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9, A7, A5, A3, A1, M7, M5, M3
3. Quad Output Data
IO0 = (D4, D0,…..)
IO1 = (D5, D1,…..)
IO2 = (D6, D2,…..)
IO3 = (D7, D3,…..)
4. Quad Input Address
IO0 = A20, A16, A12, A8, A4, A0, M4, M0
IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
5. Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0,…)
IO1 = (x, x, x, x, D5, D1,…)
IO2 = (x, x, x, x, D6, D2,…)
IO3 = (x, x, x, x, D7, D3,…)
6. Security Registers Address:
Security Register0: A23-A16=00h, A15-A8=00h, A7-A0= Byte Address;
Security Register1: A23-A16=00h, A15-A8=01h, A7-A0= Byte Address;
Security Register2: A23-A16=00h, A15-A8=02h, A7-A0= Byte Address;
Security Register3: A23-A16=00h, A15-A8=03h, A7-A0= Byte Address;
Security Register 0 can be used to store the Flash Discoverable Parameters,
The feature is upon special order, please contact ACE for details.
VER 1.1
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Configuration and Status Instructions
Write Enable (06H)
See Figure 2, the Write Enable instruction is for setting the Write Enable Latch bit. The Write
Enable Latch bit must be set prior to every Page Program, Sector Erase, Block Erase, Chip Erase and
Write Status Register instruction. The Write Enable instruction sequence: /CS goes low sending the
Write Enable instruction /CS goes high.
Figure 2 Write Enable Sequence Diagram
Figure 2
Write Disable (04H)
See Figure 3, the Write Disable instruction is for resetting the Write Enable Latch bit. The Write
Disable instruction sequence: /CS goes low sending the Write Disable instruction /CS goes high. The
WEL bit is reset by following condition: Power-up and upon completion of the Write Status Register,
Page Program, Sector Erase, Block Erase and Chip Erase instructions.
Figure 3, Write Disable Sequence Diagram
Figure 3
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8M BIT SPI NOR FLASH Memory Series
Read Status Register (05H or 35H)
See Figure 4, the Read Status Register (RDSR) instruction is for reading the Status Register. The
Status Register may be read at any time, even while a Program, Erase or Write Status Register cycle
is in progress. When one of these cycles is in progress, it is recommended to check the Write in
Progress (WIP) bit before sending a new instruction to the device. It is also possible to read the Status
Register continuously. For instruction code “05H”, the SO will output Status Register bits S7~S0. The
instruction code “35H”, the SO will output Status Register bits S15~S8.
Figure 4. Read Status Register Sequence Diagram
Figure 4
Write Status Register (01H)
See Figure 5, the Write Status Register instruction allows new values to be written to the Status
Register. Before it can be accepted, a Write Enable instruction must previously have been executed.
After the Write Enable instruction has been decoded and executed, the device sets the Write Enable
Latch (WEL).
The Write Status Register instruction has no effect on S15, S1 and S0 of the Status Register. /CS
must be driven high after the eighth or sixteen bit of the data byte has been latched in. If not, the Write
Status Register instruction is not executed. If /CS is driven high after eighth bit of the data byte, the
QE and SRP1 bits will be cleared to 0. As soon as /CS is driven high, the self-timed Write Status
Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress,
the Status Register may still be read to check the value of the Write in Progress (WIP) bit. The Write in
Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed.
When the cycle is completed, the Write Enable Latch is reset.
The Write Status Register instruction allows the user to change the values of the Block Protect
(SEC, TB, BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as
defined in Table 3. The Write Status Register instruction also allows the user to set or reset the Status
Register Protect (SRP1 and SRP0) bits in accordance with the Write Protect (/WP) signal. The Status
Register Protect (SRP1 and SRP0) bits and Write Protect (/WP) signal allow the device to be put in
the Hardware Protected Mode. The Write Status Register instruction is not executed once the
Hardware Protected Mode is entered.
Figure 5 Write Status Register Sequence Diagram
Figure 5
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Write Enable for Volatile Status Register (50H)
See Figure 6, the non-volatile Status Register bits can also be written to as volatile bits. During
power up reset, the non-volatile Status Register bits are copied to a volatile version of the Status
Register that is used during device operation. This gives more flexibility to change the system
configuration and memory protection schemes quickly without waiting for the typical non-volatile bit
write cycles or affecting the endurance of the Status Register non-volatile bits. To write the volatile
version of the Status Register bits, the Write Enable for Volatile Status Register (50h) instruction must
be issued prior to each Write Status Registers (01h) instruction. Write Enable for Volatile Status
Register instruction will not set the Write Enable Latch bit, it is only valid for the next following Write
Status Registers instruction, to change the volatile Status Register bit values.
Figure 6 Write Enable for Volatile Status Register
Figure 6
Read Instructions
Read Data (03H)
See Figure 7, the Read Data Bytes (READ) instruction is followed by a 3-byte address (A23-A0),
each bit being latched-in during the rising edge of SCLK. Then the memory content, at that address, is
shifted out on SO, each bit being shifted out, at a Max frequency fR, during the falling edge of SCLK.
The address is automatically incremented to the next higher address after each byte of data is shifted
out allowing for a continuous stream of data. This means that the entire memory can be accessed with
a single command as long as the clock continues. The command is completed by driving /CS high.
The whole memory can be read with a single Read Data Bytes (READ) instruction. Any Read Data
Bytes (READ) instruction, while an Erase, Program or Write cycle is in progress, is rejected without
having any effects on the cycle that is in progress. Normal read mode running up to 50MHz.
Figure 7 Read Data Bytes Sequence Diagram
Figure 7
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Fast Read (0BH)
See Figure 8, the Read Data Bytes at Higher Speed (Fast Read) instruction is for quickly reading
data out. It is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in
during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each
bit being shifted out, at a Max frequency fc, during the falling edge of SCLK. The first byte addressed
can be at any location. The address is automatically incremented to the next higher address after
each byte of data is shifted out.
Figure 8 Fast Read Sequence Diagram
Figure 8
Dual Output Fast Read (3BH)
See Figure 9, the Dual Output Fast Read instruction is followed by 3-byte address (A23-A0) and a
dummy byte, each bit being latched in during the rising edge of SCLK, then the memory contents are
shifted out 2-bit per clock cycle from SI and SO. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out.
Figure 9 Dual Output Fast Read Sequence Diagram
Figure 9
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8M BIT SPI NOR FLASH Memory Series
Quad Output Fast Read (6BH)
See Figure 10, the Quad Output Fast Read instruction is followed by 3-byte address (A23-A0) and
a dummy byte, each bit being latched in during the rising edge of SCLK, then the memory contents
are shifted out 4-bit per clock cycle from IO3, IO2, IO1 and IO0. The first byte addressed can be at
any location. The address is automatically incremented to the next higher address after each byte of
data is shifted out.
Figure 10 Quad Output Fast Read Sequence Diagram
Figure 10
Dual I/O Fast Read (BBH)
See Figure 11, the Dual I/O Fast Read instruction is similar to the Dual Output Fast Read
instruction but with the capability to input the 3-byte address (A23-0) and a “Continuous Read Mode”
byte 2-bit per clock by SI and SO, each bit being latched in during the rising edge of SCLK, then the
memory contents are shifted out 2-bit per clock cycle from SI and SO. The first byte addressed can be
at any location. The address is automatically incremented to the next higher address after each byte
of data is shifted out.
Figure 11 Dual I/O Fast Read Sequence Diagram (Initial command or previous M5-4≠10)
Figure 11
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Dual I/O Fast Read with “Continuous Read Mode”
The Fast Read Dual I/O command can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in Figure 14. The
upper nibble of the (M7-4) controls the length of the next Fast Read Dual I/O command through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t
care (“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out
clock. If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Dual I/O command
(after /CS is raised and then lowered) does not require the BBH instruction code, as shown in Figure
12. This reduces the command sequence by eight clocks and allows the Read address to be
immediately entered after /CS is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal
to (1,0), the next command (after /CS is raised and then lowered) requires the first byte instruction
code, thus returning to normal operation. A “Continuous Read Mode” Reset command can also be
used to reset (M7-0) before issuing normal commands (see Continuous Read Mode Reset (FFH or
FFFFH)).
Figure 12 Dual I/O Fast Read Sequence Diagram (Previous command set M5-4 =10)
Figure 12
Quad I/O Fast Read (EBH)
See Figure 13, the Quad I/O Fast Read instruction is similar to the Dual I/O Fast Read instruction
but with the capability to input the 3-byte address (A23-0) and a “Continuous Read Mode” byte and
4-dummy clock 4-bit per clock by IO0, IO1, IO3, IO4, each bit being latched in during the rising edge
of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO0, IO1, IO2, IO3. The
first byte addressed can be at any location. The address is automatically incremented to the next
higher address after each byte of data is shifted out. The Quad Enable bit (QE) of Status Register
must be set to enable for the Quad I/O Fast read instruction.
Figure 13 Quad I/O Fast Read Sequence Diagram (Initial command or previous M5-4≠10)
Figure 13
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Quad I/O Fast Read with “Continuous Read Mode”
See Figure 14, the Fast Read Quad I/O command can further reduce instruction overhead through
setting the “Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), The upper nibble
of the (M7-4) controls the length of the next Fast Read Quad I/O command through the inclusion or
exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care (“x”).
However, the IO pins should be high-impedance prior to the falling edge of the first data out clock. If
the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O command (after /CS
is raised and then lowered) does not require the EBH instruction code, This reduces the command
sequence by eight clocks and allows the Read address to be immediately entered after /CS is
asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next command (after
/CS is raised and then lowered) requires the first byte instruction code, thus returning to normal
operation. A “Continuous Read Mode” Reset command can also be used to reset (M7-0) before
issuing normal commands (see Continuous Read Mode Reset (FFH or FFFFH)).
Figure 14 Quad I/O Fast Read Sequence Diagram (Previous command set M5-4 =10)
Figure 14
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Continuous Read Mode Reset (FFH or FFFFH)
The “Continuous Read Mode” bits are used in conjunction with “Fast Read Dual I/O” and “Fast
Read Quad I/O” Instructions to provide the highest random Flash memory access rate with minimum
SPI instruction overhead, thus allowing more efficient XIP (execute in place) with this device family.
The “Continuous Read Mode” bits M7-0 are set by the Dual/Quad I/O Read Instructions. M5-4 are
used to control whether the 8-bit SPI instruction code (BBH or EBH) is needed or not for the next
instruction. When M5-4 = (1,0), the next instruction will be treated the same as the current Dual/Quad
I/O Read instruction without needing the 8-bit instruction code; when M5-4 do not equal to (1,0), the
device returns to normal SPI instruction mode, in which all instructions can be accepted. M7-6 and
M3-0 are reserved bits for future use, either 0 or 1 values can be used.
Figure 15 the Continuous Read Mode Reset instruction (FFH or FFFFH) can be used to set M4 = 1,
thus the device will release the Continuous Read Mode and return to normal SPI operation.
To reset “Continuous Read Mode” during Quad I/O operation, only eight clocks are needed. The
instruction is “FFH”. To reset “Continuous Read Mode” during Dual I/O operation, sixteen clocks are
needed to shift in instruction “FFFFH
Figure 15 Continuous Read Mode Reset Sequence Diagram
Figure 15
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Fast Read Quad I/O with “8/16/32/64-Byte Wrap Around”
The Fast Read Quad I/O instruction can also be used to access a specific portion within a page by
issuing a “Set Burst with Wrap” (77h) instruction prior to EBh. The “Set Burst with Wrap” (77h)
instruction can either enable or disable the “Wrap Around” feature for the following EBh instructions.
When “Wrap Around” is enabled, the data being accessed can be limited to either an
8,16,32 or 64-byte section of a 256-byte page. The output data starts at the initial address specified in
the instruction, once it reaches the ending boundary of the 8/16/32/64-byte section, the output will
wrap around to the beginning boundary automatically until /CS is pulled high to
terminate the instruction.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address
and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing
multiple read instructions.
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to
enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap
around section within a page.
Similar to a Quad I/O instruction, the Set Burst with Wrap instruction is initiated by driving the /CS
pin low and then shifting the instruction code “77h” followed by 24 dummy bits and 8 “Wrap Bits”,
W7-0. Wrap bit W7 and the lower nibble W3-0 are not used.
Once W6-4 is set by a Set Burst with Wrap instruction, all the following “Fast Read Quad I/O” and
“Word Read Quad I/O” instructions will use the W6-4 setting to access the 8/16/32/64-byte section
within any page. To exit the “Wrap Around” function and return to normal read operation, another Set
Burst with Wrap instruction should be issued to set W4=1. The default value of W4 upon power on is 1.
Table 9
W6
0
0
1
1
Figure 16
W5
0
1
0
1
Set
W4 = 0
W4 =1 (DEFAULT)
Wrap Around
Wrap Length
Yes
8-byte
Yes
16-byte
Yes
32-byte
Yes
64-byte
Burst with Wrap Command Sequence
Wrap Around
No
No
No
No
Wrap Length
N/A
N/A
N/A
N/A
Figure 16
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
ID and Security Instructions
Read Manufacture ID/ Device ID (90H)
See Figure 17, the Read Manufacturer/Device ID instruction is an alternative to the Release from
Power-Down/Device ID instruction that provides both the JEDEC assigned Manufacturer ID and the
specific Device ID.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “90H” followed
by a 24-bit address (A23-A0) of 000000H. If the 24-bit address is initially set to 000001H, the Device
ID will be read first.
Figure 17 Read Manufacture ID/ Device ID Sequence Diagram
Figure 17
JEDEC ID (9FH)
The JEDEC ID instruction allows the 8-bit manufacturer identification to be read, followed by two
bytes of device identification. The device identification indicates the memory type in the first byte, and
the memory capacity of the device in the second byte. JEDEC ID instruction while an Erase or
Program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. The
JEDEC ID instruction should not be issued while the device is in Deep Power-Down Mode.
See Figure 18, he device is first selected by driving /CS to low. Then, the 8-bit instruction code for
the instruction is shifted in. This is followed by the 24-bit device identification, stored in the memory,
being shifted out on Serial Data Output, each bit being shifted out during the falling edge of Serial
Clock. The JEDEC ID instruction is terminated by driving /CS to high at any time during data output.
When /CS is driven high, the device is put in the Standby Mode. Once in the Standby Mode, the
device waits to be selected, so that it can receive, decode and execute instructions.
Figure 18 JEDEC ID Sequence Diagram
Figure 18
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8M BIT SPI NOR FLASH Memory Series
Deep Power-Down (B9H)
Although the standby current during normal operation is relatively low, standby current can be
further reduced with the Deep Power-down instruction. The lower power consumption makes the
Deep Power-down (DPD) instruction especially useful for battery powered applications (see ICC1 and
ICC2). The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as
shown in Figure 19
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Deep
Power down instruction will not be executed. After /CS is driven high, the power-down state will
entered within the time duration of tDP. While in the power-down state only the Release from Deep
Power-down / Device ID instruction, which restores the device to normal operation, will be recognized.
All other Instructions are ignored. This includes the Read Status Register instruction, which is always
available during normal operation. Ignoring all but one instruction also makes the Power Down state a
useful condition for securing maximum write protection. The device always powers-up in the normal
operation with the standby current of ICC1.
Figure 19 Deep Power-Down Sequence Diagram
Figure 19
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Release from Deep Power-Down/Read Device ID (ABH)
The Release from Power-Down or Device ID instruction is a multi-purpose instruction. It can be
used to release the device from the Power-Down state or obtain the devices electronic identification
(ID) number.
See Figure 20 , to release the device from the Power-Down state, the instruction is issued by
driving the /CS pin low, shifting the instruction code “ABH” and driving /CS high Release from
Power-Down will take the time duration of tRES1 (See AC Characteristics) before the device will
resume normal operation and other instruction are accepted. The /CS pin must remain high during the
tRES1 time duration.
When used only to obtain the Device ID while not in the Power-Down state, the instruction is
initiated by driving the /CS pin low and shifting the instruction code “ABH” followed by 3-dummy byte.
The Device ID bits are then shifted out on the falling edge of SCLK with most significant bit (MSB) first
as shown in See Figure 21 The Device ID value for the ACE25Q800G is listed in Manufacturer and
Device Identification table. The Device ID can be read continuously. The instruction is completed by
driving /CS high.
When used to release the device from the Power-Down state and obtain the Device ID, the
instruction is the same as previously described, and shown in See Figure 21, except that after /CS is
driven high it must remain high for a time duration of tRES2 (See AC Characteristics). After this time
duration the device will resume normal operation and other instruction will be accepted. If the Release
from Power-Down/Device ID instruction is issued while an Erase, Program or Write cycle is in process
(when WIP equal 1) the instruction is ignored and will not have any effects on the current cycle.
Figure 20 Release Power-Down Sequence Diagram
Figure 20
Figure 21 Release Power-Down/Read Device ID Sequence Diagram
Figure 21
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8M BIT SPI NOR FLASH Memory Series
Read Security Registers (48H)
See Figure 22, the Read Security Registers instruction is similar to Fast Read instruction. The
instruction is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in
during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each
bit being shifted out, at a Max frequency fC, during the falling edge of SCLK. The first byte addressed
can be at any location. The address is automatically incremented to the next higher address after
each byte of data is shifted out. Once the A9-A0 address reaches the last byte of the register (Byte
3FFH), it will reset to 000H, the instruction is completed by driving /CS high
Table 10
Address
A23-A16
A15-A8
A7-A0
Security Registers 1
00H
01H
Byte Address
Security Registers 2
00H
02H
Byte Address
Security Registers 3
00H
03H
Byte Address
Figure 22 Read Security Registers instruction Sequence Diagram
Figure 22
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Erase Security Registers (44H)
The ACE25Q800G provides three 256-byte Security Registers which can be erased and
programmed individually. These registers may be used by the system manufacturers to store security
and other important information separately from the main memory array.
See Figure 23, the Erase Security Registers instruction is similar to Sector/Block Erase instruction.
A Write Enable instruction must previously have been executed to set the Write Enable Latch bit.
The Erase Security Registers instruction sequence: /CS goes low sending Erase Security Registers
instruction /CS goes high. /CS must be driven high after the eighth bit of the instruction code has been
latched in otherwise the Erase Security Registers instruction is not executed. As soon as /CS is driven
high, the self-timed Erase Security Registers cycle (whose duration is tSE) is initiated. While the
Erase Security Registers cycle is in progress, the Status Register may be read to check the value of
the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Erase
Security Registers cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch bit is reset. The Security Registers Lock Bit (LB) in the Status
Register can be used to OTP protect the security registers. Once the LB bit is set to 1, the Security
Registers will be permanently locked; the Erase Security Registers instruction will be ignored.
Table 11
Address
A23-A16
A15-A8
A7-A0
Security Registers 1
00H
01H
Don’t Care
Security Registers 2
00H
02H
Don’t Care
Security Registers 3
00H
03H
Don’t Care
Figure 23, Erase Security Registers instruction Sequence Diagram
Figure 23
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Program Security Registers (42H)
See Figure 24, the Program Security Registers instruction is similar to the Page Program
instruction. It allows from 1 to 256 bytes Security Registers data to be programmed. A Write Enable
instruction must previously have been executed to set the Write Enable Latch bit before sending the
Program Security Registers instruction. The Program Security Registers instruction is entered by
driving /CS Low, followed by the instruction code (42H), three address bytes and at least one data
byte on SI. As soon as /CS is driven high, the self-timed Program Security Registers cycle (whose
duration is tPP) is initiated. While the Program Security Registers cycle is in progress, the Status
Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Program Security Registers cycle, and is 0 when it is completed. At
some unspecified time before the cycle is completed, the Write Enable
Latch bit is reset.
If the Security Registers Lock Bit (LB3/LB2/LB1) is set to 1, the Security Registers will be
permanently locked. Program Security Registers instruction will be ignored.
Table 12
Address
A23-A16
A15-A8
A7-A0
Security Registers 1
00H
01H
Byte Address
Security Registers 2
00H
02H
Byte Address
Security Registers 3
00H
03H
Byte Address
Figure 24 Program Security Registers instruction Sequence Diagram
Figure 24
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ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Program and Erase Instructions
Page Program (02H)
The Page Program instruction is for programming the memory. A Write Enable instruction must
previously have been executed to set the Write Enable Latch bit before sending the Page Program
instruction.
See Figure 25, the Page Program instruction is entered by driving /CS Low, followed by the
instruction code, three address bytes and at least one data byte on SI. If the 8 least significant
address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the current
page are programmed from the start address of the same page (from the address whose 8 least
significant bits (A7-A0) are all zero). /CS must be driven low for the entire duration of the sequence.
The Page Program instruction sequence: /CS goes low sending Page Program instruction 3-byte
address on SI at least 1 byte data on SI /CS goes high. The instruction sequence is shown in Figure16.
If more than 256 bytes are sent to the device, previously latched data are discarded and the last 256
data bytes are guaranteed to be programmed correctly within the same page. If less than 256 data
bytes are sent to device, they are correctly programmed at the requested addresses without having
any effects on the other bytes of the same page. /CS must be driven high after the eighth bit of the last
data byte has been latched in; otherwise the Page Program instruction is not executed.
As soon as /CS is driven high, the self-timed Page Program cycle (whose duration is tPP) is
initiated. While the Page Program cycle is in progress, the Status Register may be read to check the
value of the Write in Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed
Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch bit is reset.
A Page Program instruction applied to a page which is protected by the Block Protect (SEC, TB,
BP2, BP1, BP0) bits (see Table 6 & 7) is not executed.
Figure 25 Page Program Sequence Diagram
Figure 25
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8M BIT SPI NOR FLASH Memory Series
Sector Erase (20H)
The Sector Erase instruction is for erasing the all data of the chosen sector. A Write Enable instruction must
previously have been executed to set the Write Enable Latch bit. The Sector Erase instruction is entered by
driving /CS low, followed by the instruction code, and 3-address byte on SI. Any address inside the sector is a
valid address for the Sector Erase instruction. /CS must be driven low for the entire duration of the sequence.
See Figure 26, the Sector Erase instruction sequence: /CS goes low sending Sector Erase instruction
3-byte address on SI /CS goes high. The instruction sequence is shown in Figure18. /CS must be driven high
after the eighth bit of the last address byte has been latched in; otherwise the Sector Erase instruction is not
executed. As soon as /CS is driven high, the self-timed Sector Erase cycle (whose duration is tSE) is initiated.
While the Sector Erase cycle is in progress, the Status Register may be read to check the value of the Write In
Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Sector Erase cycle, and is 0 when
it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch bit is reset.
A Sector Erase instruction applied to a sector which is protected by the Block Protect (SEC, TB, BP2, BP1,
BP0) bits (see Table 6 & 7) is not executed.
Figure 26 Sector Erase Sequence Diagram
Figure 26
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32KB Block Erase (52H)
The 32KB Block Erase instruction is for erasing the all data of the chosen block. A Write Enable
instruction must previously have been executed to set the Write Enable Latch bit. The 32KB Block
Erase instruction is entered by driving /CS low, followed by the instruction code, and three address
bytes on SI. Any address inside the block is a valid address for the 32KB Block Erase instruction.
/CS must be driven low for the entire duration of the sequence.
See Figure 27, the 32KB Block Erase instruction sequence: /CS goes low sending 32KB Block
Erase instruction 3-byte address on SI /CS goes high. The instruction sequence is shown in Figure19.
/CS must be driven high after the eighth bit of the last address byte has been latched in; otherwise the
32KB Block Erase instruction is not executed. As soon as /CS is driven high, the self-timed Block
Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status
Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the Write Enable Latch bit is reset. A 32KB Block
Erase instruction applied to a block which is protected by the Block Protect (SEC, TB, BP2, BP1, BP0)
bits (see Table 6 & 7) is not executed.
Figure 27 32KB Block Erase Sequence Diagram
Figure 27
VER 1.1
33
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
64KB Block Erase (D8H)
The 64KB Block Erase instruction is for erasing the all data of the chosen block. A Write Enable
instruction must previously have been executed to set the Write Enable Latch bit. The 64KB Block
Erase instruction is entered by driving /CS low, followed by the instruction code, and three address
bytes on SI. Any address inside the block is a valid address for the 64KB Block Erase instruction.
/CS must be driven low for the entire duration of the sequence.
See Figure 28, the 64KB Block Erase instruction sequence: /CS goes low sending 64KB Block
Erase instruction 3-byte address on SI /CS goes high. The instruction sequence is shown in Figure20.
/CS must be driven high after the eighth bit of the last address byte has been latched in; otherwise the
64KB Block Erase instruction is not executed. As soon as /CS is driven high, theself-timed Block
Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status
Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the Write Enable Latch bit is reset. A 64KB Block
Erase instruction applied to a block which is protected by the Block Protect (SEC, TB, BP2, BP1, BP0)
bits (see Table 6 & 7) is not executed.
Figure 28 64KB Block Erase Sequence Diagram
Figure 28
VER 1.1
34
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Chip Erase (60/C7H)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A
Write Enable instruction must be executed before the device will accept the Chip Erase Instruction
(Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and
shifting the instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in Figure
29.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip
Erase instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction
will commence for a time duration of tCE. While the Chip Erase cycle is in progress, Chip Erase cycle is in
progress, the Read Status Register instruction may still be accessed to check the status of the WIP bit.
The WIP bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is
ready to accept other Instructions again. After the Chip Erase cycle has finished the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0. The Chip Erase instruction will not be executed
if any page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (see Table
6&7).
Figure 29 Chip Erase Sequence Diagram
Figure 29
Erase / Program Suspend (75H)
The Erase/Program Suspend instruction allows the system to interrupt a Sector or Block Erase
operation, then read from or program data to any other sector. The Erase/Program Suspend
instruction also allows the system to interrupt a Page Program operation and then read from any other
page or erase any other sector or block. The Erase/Program Suspend instruction sequence
is shown in Figure 30.
The Write Status Registers instruction (01h) and Erase instructions (20h, D8h, C7h, 60h, 44h) are
not allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If
written during the Chip Erase operation, the Erase Suspend instruction is ignored. The Write Status Registers
instruction (01h), and Program instructions (02h, 42h) are not allowed during Program Suspend. Program
Suspend is valid only during the Page Program operation.
Figure 30 Erase/Program Suspend Command Sequence
Figure 30
VER 1.1
35
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Erase / Program Resume (7AH)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block
Erase operation or the Page Program operation after an Erase/Program Suspend. The Resume
instruction “7Ah” will be accepted by the device only if the SUS bit in the Status Register equals to
1 and the WIP bit equals to 0.
After the Resume instruction is issued the SUS bit will be cleared from 1 to 0 immediately, the WIP
bit will be set from 0 to 1 within 200 ns and the Sector or Block will complete the erase operation or
the page will complete the program operation. If the SUS bit equals to 0 or the WIP bit equals to 1,
the Resume instruction “7Ah” will be ignored by the device. The Erase/Program Resume
instruction sequence is shown in Figure 31.
Figure 31 Erase/Program Resume Command Sequence
Figure 31
Reset Device Instructions
Enable Reset (7Eh) and Reset Device (99h)
Because of the small package and the limitation on the number of pins, the ACE25Q800G provides
a software Reset instruction instead of a dedicated RESET pin. Once the software Reset
instruction is accepted, any on-going internal operations will be terminated and the device will
return to its default power-on state and lose all the current volatile settings, such as Volatile Status
Register bits, Write Enable Latch (WEL) status, Program/Erase Suspend status, Continuous Read
Mode bit setting (M7-M0) and Wrap Bit setting (W6-W4).
To avoid accidental reset, both “Enable Reset (7Eh)” and “Reset (99h)” instructions must be
issued in sequence. Any other commands other than “Reset (99h)” after the “Enable Reset (7Eh)”
command will disable the “Reset Enable” state. A new sequence of “Enable Reset (7Eh)” and
“Reset (99h)” is needed to reset the device. Once the Reset command is accepted by the device,
the device will take approximately 30us to reset. During this period, no command will be accepted.
The Enable Reset (7Eh) and Reset (99h) instruction sequence is shown in Figure 32.
Data corruption may happen if there is an on-going or suspended internal Erase or Program
operation when Reset command sequence is accepted by the device. It is recommended to check
the BUSY bit and the SUS bit in Status Register before issuing the Reset command sequence.
Figure 32 Reset (7Eh) and Reset (99h) Command Sequence
Figure 32
VER 1.1
36
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Electrical Characteristics
Table 13 Absolute Maximum Ratings
PARAMETERS
SYMBOL
Supply Voltage
VCC
Voltage Applied to Any Pin
VIO
Transient Voltage on any Pin
VIOT
CONDITIONS
RANGE
UNIT
–0.5 to 4
V
Relative to Ground
–0.5 to 4
V
<20nS Transient Relative to
–2.0Vto VCC+2.0V
Ground
Storage Temperature
TSTG
Electrostatic Discharge Voltage
VESD
Human Body Model(1)
V
–65 to +150
°C
–2000 to +2000
V
Notes:
1. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms)
Operating Ranges
Table14
PARAMETER
SYMBOL
SPEC
CONDITIONS
Supply Voltage
VCC
FR = 108MHz, fR = 50MHz
Temperature Operating
TA
Commercial Industrial
UNIT
MIN
MAX
2.7
3.6
V
-40
+85
°C
Data Retention and Endurance
Table 15
Parameter
Minimum Pattern Data Retention Time
Erase/Program Endurance
Test Condition
Min
Units
150°C
10
Years
125°C
20
Years
-40 to 85°C
100K
Cycles
VER 1.1
37
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Latch Up Characteristics
Table16
Parameter
Input Voltage Respect To VSS On I/O Pins
VCC Current
Min
-1.0V
-100mA
Max
VCC+1.0V
100mA
Power-up Timing
Symbol
tVSL
tPUW
VWI
Parameter
VCC(min) To /CS Low
Time Delay From VCC(min) To Write Instruction
Write Inhibit Voltage VCC(min)
Min Max Unit
10
us
1
10
ms
1
2.5
V
Figure 33 Power-up Timing and Voltage Levels
Figure 33
VER 1.1
38
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
DC Electrical Characteristics
(T= -40℃~85℃, VCC=2.7~3.6V)
Table17
Symbol
Parameter
Test Condition
Min.
Typ
Max.
Unit.
ILI
Input Leakage Current
±2
µA
ILO
Output Leakage Current
±2
µA
13
25
µA
2
5
µA
3/4/5
3.5/5/6
mA
5/11/19
7.5/12/19.5
mA
6.5/16/30
9.5/17/33
mA
10/33/60
12/35/65
mA
ICC1
Standby Current
ICC2
Deep Power-Down Current
ICC3
Current: Read
1MHz
Current: Read
33MHz
Current: Read
50MHz
Current: Read
108MHz
/CS=VCC,
VIN=VCC or VSS
/CS=VCC,
VIN=VCC or VSS
Single/Dual/Quad
Single/Dual/Quad
Single/Dual/Quad
SCLK=0.1VCC/
0.9VCC(1)
Single/Dual/Quad
ICC4
Operating Current(Page Program)
/CS=VCC
15
mA
ICC5
Operating Current(WRSR)
/CS=VCC
5
mA
ICC6
Operating Current(Sector Erase)
/CS=VCC
20
mA
ICC7
Operating Current(Block Erase)
/CS=VCC
20
mA
ICC8
Operating Current (Chip Erase)
/CS=VCC
20
mA
VIL
Input Low Voltage
-0.5
0.2VCC
V
VIH
Input High Voltage
0.8VCC
VCC+0.4
V
VOL
Output Low Voltage
IOL =100µA
0.4
V
VOH
Output High Voltage
IOH =-100µA
VCC-0.2
V
Note:
(1) ICC3 is measured with ATE loading
VER 1.1
39
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
AC Measurement Conditions
Table18
Symbol
CL
TR, TF
VIN
IN
OUT
Parameter
Min
Tpy
Max
Unit
Load Capacitance
30
pF
Input Rise And Fall time
5
ns
Input Pause Voltage
0.2VCC to 0.8VCC
V
Input Timing Reference Voltage
0.3VCC to 0.7VCC
V
0.5VCC
V
Output Timing Reference Voltage
Figure 34 AC Measurement I/O Waveform
Figure 34
VER 1.1
40
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
AC Electrical Characteristics
Table19
Symbol
fc
fR
tCLH
tCLL
tCLCH
tCHCL
tSLCH
tCHSH
tSHCH
tCHSL
tSHSL
tSHQZ
tCLQX
tDVCH
tCHDX
tHLCH
tHHCH
tCHHL
tCHHH
tHLQZ
tHHQX
tCLQV
tWHSL
tSHWL
tDP
tRES1
tRES2
tSUS
tW
tBP1
tBP2
tPP
tSE
tBE
tCE
Parameter
Clock frequency for all instructions, except Read Data(03H)
Clock freq. Read Data instruction(03H)
Serial Clock High Time
Serial Clock Low Time
Serial Clock Rise Time (Slew Rate)
Serial Clock Fall Time (Slew Rate)
/CS Active Setup Time
/CS Active Hold Time
/CS Not Active Setup
Time
/CS Not Active Hold Time
/CS High Time（read/write）
Output
Disable Time
Output
Hold Time
Data In Setup Time
Data In Hold Time
/Hold Low Setup Time (relative to Clock)
/Hold High Setup Time (relative to Clock)
/Hold High Hold Time (relative to Clock)
/Hold Low Hold Time (relative to Clock)
/Hold Low To High-Z Output
/Hold Low To Low-Z Output
Clock Low To Output Valid
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High To Deep Power-Down Mode
/CS High To Standby Mode Without Electronic Signature
Read
/CS High To Standby Mode With Electronic Signature Read
/CS High To Next Instruction After Suspend
Write Status Register Cycle Time
Byte Program Time (First Byte) (3)
Additional Byte Program Time (After First Byte) (3)
Page Programming Time
Sector Erase Time
Block Erase Time(32K Bytes/64K Bytes)
Chip Erase Time
Min.
DC.
DC.
4
4
0.1(1)
0.1(1)
5
5
5
5
20
Typ.
Max.
108
55
0.1
Unit.
MHz
MHz
ns
ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
3
µs
1.5
2
15(2)
10
5
2.4
300
1/1.2
18
µs
µs
ms
µs
µs
ms
ms
s
s
6
0
2
2
5
5
5
5
6
6
7
20
100
10
5
2.8
0.7
60
02./0.4
7
Note:
1. Tested with clock frequency lower than 50 MHz.
2. tW can be up to 45 ms at -40℃ during the characterization of the current design. It will be improved in the future design.
3. For multiple bytes after first byte within a page, tBPn = tBP1 + tBP2 * N, where N is the number of bytes programmed.
VER 1.1
41
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Figure 35 Serial Input Timing
Figure 35
Figure 36 Output Timing
Figure 36
Figure 37 Hold Timing
Figure 37
VER 1.1
42
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Packaging information
USON 3*2-8 (0.50mm-0.50mm)
Dimensions
Symbol
A
A1
A2
A3
b
D
E
J
K
e
L
L1
Unit
Min 0.40 0.00 0.25
0.20 1.90 1.90 0.15 1.55
0.30
0.15
0.50
mm
Nom 0.4
0.30
0.25 2.00 2.00 0.20 1.60
0.35 0.01
REF
BSC
MAX 0.50 0.05 0.35
0.30 2.10 2.10 0.25 1.65
0.45
Symbol
mm
aaa
0.1
bbb
0.1
ccc
0.08
ddd
0.1
eee
0.1
VER 1.1
43
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Packaging information
USON 3*3-8 (0.75mm-0.65mm)
Dimensions
Symbol
A
A1
b
c
D
D2
e
Nd
E
E2
L
h
Unit
Min 0.70
0.25 0.18 2.90 2.40
2.90 1.45 0.30 0.20
0.65 1.95
mm
Nom 075 0.02 0.30 020 3.00 2.50
3.00 1.55 0.40 0.25
BSC BSC
MAX 0.80 0.05 0.35 0.25 3.10 2.60
3.10 1.65 0.50 0.30
VER 1.1
44
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Packaging information
USON 3*3-8 (0.45mm-0.50mm)
Dimensions
Symbol
A
A1
A2
A3
b
D
D1
e
E
E1
L
Unit
Min 0.40 0.00 0.25
0.20 2.95 1.65
2.95 2.15 0.35
0.15
0.50
mm
Nom 0.45
0.30
0.25 3.00 1.70
3.00 2.20 0.40
REF
BSC
MAX 0.50 0.05 0.35
0.30 3.05 1.75
3.05 2.25 0.45
VER 1.1
45
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Packaging information
USON 4*4-8 (0.45mm-0.80mm)
Dimensions
Symbol
A
A1
A2
A3
b
D
E
J
K
e
L
Unit
Min 0.40 0.00 0.25
0.25 3.90 3.90 2.20 2.90
0.35
0.15
0.80
mm
Nom 0.45
0.30
0.30 4.00 4.00 2.30 3.00
0.40
REF
BSC
MAX 0.50 0.05 0.35
0.35 4.10 4.10 2.40 3.10
0.45
Symbol
mm
aaa
0.1
bbb
0.1
ccc
0.08
ddd
0.07
eee
0.1
VER 1.1
46
ACE25Q800G
8M BIT SPI NOR FLASH Memory Series
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
47