ACE1106M N-Channel 60-V MOSFET Description ACE1106M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • • • Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Absolute Maximum Ratings (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 ID 110 IDM 390 IS 110 A PD 300 W Continuous Drain Current a Pulsed Drain Current T A=25°C b Continuous Source Current (Diode Conduction) a Power Dissipation a T A=25°C Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Unit V A °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Maximum Junction-to-Ambient RθJA 62.5 Maximum Junction-to-Case RθJC 0.5 °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 ACE1106M N-Channel 60-V MOSFET Packaging Type TO-220 DRAIN connected to TAB N-Channel MOSFET G D S Ordering information ACE1106M ZM + H Halogen - free Pb - free ZM:TO-220 VER 1.1 2 ACE1106M N-Channel 60-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 uA Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V Zero Gate Voltage Drain Current IDSS Gate-Source Threshold Voltage On-State Drain Current a ID(on) 1 V ±100 VDS = 48 V, VGS = 0 V 1 VDS = 48 V, VGS = 0 V, TJ = 55°C 25 VDS = 5 V, VGS = 10 V nA uA 110 A VGS = 10 V, ID = 30A 8 VGS = 4.5 V, ID = 20A 13 Drain-Source On-Resistance a rDS(on) Forward Transconductance a gfs VDS = 15 V, ID = 20 A 40 S Diode Forward Voltage a VSD IS = 55A, VGS = 0 V 1.1 V Dynamic b Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 36 Turn-On Delay Time td(on) 35 Rise Time Turn-Off Delay Time 64 VDS = 30 V, VGS = 4.5 V, ID = 20 A 28 tr VDD = 30 V, RL = 1.5 Ω , ID = 20 A, 60 td(off) VGEN = 10 V, RGEN = 6 Ω 174 tf 52 Input Capacitance Ciss 9289 Output Capacitance Coss ReverseTransfer Capacitance Crss Fall Time mΩ VDS = 15 V, VGS = 0 V, f =1 MHz nC ns pF 572 555 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. VER 1.1 3 ACE1106M N-Channel 60-V MOSFET Typical Performance Characteristics (N-Channel) ID-Drain Current (A) 1. On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage VDS - Drain-to-Source Voltage (V) 5. Output Characteristics VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage VDS-Drain-to-Source Voltage (V) 6. Capacitance VER 1.1 4 ACE1106M N-Channel 60-V MOSFET Typical Performance Characteristics Qg - Total Gate Charge (nC) 7. Gate Charge VDS Drain to Source Voltage (V) 9. Safe Operating Area TJ –Junction Temperature(°C) 8. Normalized On-Resistance Vs Junction Temperature t1 TIME (SEC) 10. Single Pulse Maximum Power Dissipation t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient VER 1.1 5 ACE1106M N-Channel 60-V MOSFET Packing Information TO-220 DIMENSIONAL REQMTS INCHES REQMTS MIN NOM MAX MIN NOM MAX E 9.70 10.15 10.54 0.382 0.400 0.415 E1 8.00 8.20 8.40 0.315 0.323 0.331 D 14.50 14.96 15.74 0.571 0.589 0.620 D1 8.64 8.78 9.65 0.340 0.346 0.380 D2 12.08 12.28 12.48 0.476 0.483 0.491 L 12.27 12.40 13.48 0.483 0.488 0.531 B 3.55 3.72 3.90 0.140 0.146 0.154 b 0.69 0.813 0.94 0.027 0.032 0.037 b2 1.17 1.27 1.45 0.046 0.050 0.057 SYMBOL e 2.54BSC 0.100BSC A 4.30 4.57 4.72 0.169 0.180 0.186 A1 1.17 1.27 1.37 0.046 0.050 0.054 A2 2.47 2.57 2.67 0.097 0.101 0.105 c 0.48 0.50 0.60 0.019 0.020 0.024 ØP 3.79 3.835 3.89 0.149 0.151 0.153 Q 2.59 2.747 2.89 0.102 0.108 0.114 VER 1.1 6 ACE1106M N-Channel 60-V MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7