ACE4613B Complementary Enhancement Mode Field Effect Transistor Description The ACE4613B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Features N-channel • VDS=30V • ID=7A P-channel • VDS=-30V • ID=-6A Absolute Maximum Ratings Parameter Symbol N-channel P-channel Unit Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current (Note 1) ID 7 -6 Pulse Drain Current (Note 2) IDM 30 -30 Total Power Dissipation (Note 1) PD 1 1 Operating and Storage Temperature Range TJ,TSTG -55 to 150 -55 to 150 A W O C Packaging Type TSSOP-8 Ordering information ACE4613B TM + H Halogen - free Pb - free TM : TSSOP-8 VER 1.1 1 ACE4613B Complementary Enhancement Mode Field Effect Transistor N-channel Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 30 33 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 1 1.5 Gate-Body Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Static Drain-Source On-Resistance RDS(ON) Forward Transconductance V 3 V VGS=±20V, VDS=0V ±100 nA VDS=24V, VGS=0V 1 uA VGS=10V, ID=7A 31 40 VGS=4.5V, ID=5A 44 50 gFS VDS=5V, ID=5A 7.3 Diode Forward Voltage VSD IS=1A, VGS=0V 0.76 1 Turn-On Delay Time Td(on) 4.5 18 Turn-Off Delay Time td(off) VDS=15V, VGS=10V RGEN=3Ω, RL=2.3Ω 19 70 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss mΩ S V ns 407 VDS=15V, VGS=0V f=1MHz 113 pF 57 P-channel Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. -30 -34 Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA V Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V -1 uA Gate Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA Forward Transconductance gFS VDS=-5V, ID=-4A 12 S Diode Forward Voltage VSD IS=-1A, VGS=0V -0.77 V Turn-On Delay Time Td(on) 8 18 Turn-Off Delay Time td(off) VDS=-15V, VGS=-10V RGEN=3Ω, RL=2.5Ω 22 70 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS=-10V, ID=-6A 35 45 VGS=-4.5V, ID=-5A 45 55 -1.5 -3 VDS=-15V, VGS=0V f=1MHz -1 mΩ V ns 950 137 pF 118 Note: 1. DUT is mounted on a 1in2 FR-4 board with 2oz. Copper in a still air environment at 25°C, the current rating is based on the 2. Repetitive rating, pulse width limited by junction temperature. DC（<10s） test conditions VER 1.1 2 ACE4613B Complementary Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.1 3 ACE4613B Complementary Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.1 4 ACE4613B Complementary Enhancement Mode Field Effect Transistor Packing Information TSSOP-8 Symbol D E b c E1 A A2 A1 e L H Θ Dimensions In Millimeters Mi Ma 2.900 4.300 0.190 0.090 6.250 3.100 4.500 0.300 0.200 6.550 1.100 1.000 0.150 0.800 0.020 0.65(BSC 0.500 0.700 0.25(TYP 1° 7° Units: mm VER 1.1 5 ACE4613B Complementary Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6