JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN) TO-92 FEA TURE z NPN silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the PNP transistor 2N3906 is Recommended z This transistor is also available in the SOT-23 case with the type designation MMBT3904 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Para meter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V 0.2 A 0.625 W IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEO VCE= 40V, IB=0 0.1 μA IEBO VEB= 5V, IC=0 0.1 μA hFE1 VCE=1V, IC=10mA 100 hFE2 VCE=1V, IC=50mA 60 hFE3 VCE=1V, IC=100mA 30 Emitter cut-off current DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.95 V Transition frequency fT VCE=20V,IC=10mA,f=100MHz Delay Time td VCC=3V,VBE=0.5V, 35 ns Rise Time tr IC=10mA,IB1=1mA 35 ns Storage Time ts VCC=3V, IC=10mA 200 ns Fall Time tf IB1=IB2=1mA 50 ns CLASSIFICATION Rank Ra nge www.cj-elec.com OF 300 MHZ hFE1 O Y G 100-200 200-300 300-400 1 D,Dec,2015 Typical Characteristics Static Characteristic 100 80 350uA DC CURRENT GAIN COLLECTOR CURRENT hFE 400uA 60 —— IC COMMON EMITTER VCE=1V 500uA 450uA IC (mA) COMMON EMITTER Ta=25℃ hFE 1000 300uA 250uA 200uA 40 150uA 20 Ta=100℃ 300 Ta=25℃ 100 30 100uA IB=50uA 0 10 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— IC Ta=25℃ 30 3 10 COLLECTOR CURRENT IC 200 100 30 —— Ic 1000 —— (mA) IC Ta=25℃ Ta=100℃ 100 3 1 200 (mA) 30 10 COLLECTOR CURRENT VBE Cob/ Cib 10 VCE=5V 100 —— IC 100 VCB/ VEB f=1MHz IE=0/IC=0 Cib Ta=25℃ (mA) Cob CAPACITANCE C 10 3 Ta=25℃ 1 1 0.3 0.4 0.6 0.8 BASE-EMMITER VOLTAGE fT 1000 —— 1.0 VBE 0.1 0.1 1.2 IC fT 100 10 10 COLLECTOR CURRENT www.cj-elec.com 30 IC —— 10 V 20 (V) Ta 600 Ta=25℃ 5 Pc 700 300 3 1 REVERSE BIAS VOLTAGE COMMON EMITTER VCE=20V 2 0.3 (V) COLLECTOR POWER DISSIPATION Pc (mW) COLLCETOR CURRENT IC (pF) Ta=100℃ 0.1 0.2 (MHz) 200 (mA) 30 TRANSITION FREQUENCY 200 100 IC β=10 β=10 1 VBEsat 3000 Ta=100℃ 10 30 10 COLLECTOR CURRENT 300 100 3 1 (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 VCE 10 500 400 300 200 100 0 70 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) C,Jan,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 D,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 D,Dec,2015