JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Value Unit Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 RӨJA Thermal Resistance, junction to Ambient 1.EMILTTER 2.BASE 3. COLLECTOR ℃ ℃/mW 357 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 6 V Collector cut-off current ICBO VCB=35V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC= 0.1mA 20 hFE(2) VCE=1V, IC=1mA 40 hFE(3) VCE=1V, IC= 10mA 80 hFE(4) VCE=1V, IC=150mA 100 hFE(5) VCE=2V, IC= 500mA 40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat)1 IC=150 mA, IB=15mA 0.4 V VCE(sat)2 IC=500 mA, IB=50mA 0.75 V VBE(sat)1 IC=150 mA, IB=15mA 0.95 V VBE(sat)2 IC=500 mA, IB=50mA 1.2 V Transition frequency fT Output Capacitance Cob Delay time td Rise time tr Storage time tS Fall time tf www.cj-elec.com 300 VCE= 10V, IC= 20mA, f=100MHz VCB=10V, IE= 0, f=100KHz VCC=30V, VBE(OFF)=2V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=-IB2= 15mA 1 250 MHz 6.5 pF 15 nS 20 nS 225 nS 30 nS D,Dec,2015 Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ 1.0mA 0.9mA 0.8mA 0.7mA IC 200 DC CURRENT GAIN 150 —— IC COMMON EMITTER VCE=1V Ta=100℃ 0.6mA COLLECTOR CURRENT hFE 1000 hFE (mA) 250 0.5mA 0.4mA 100 0.3mA 0.2mA 50 300 Ta=25℃ 100 30 IB=0.1mA 0 1 2 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) 1000 —— 10 0.1 3 VCE IC VBEsat 1.0 Ta=100℃ 10 3 Ta=25℃ 30 100 30 COLLECTOR CURRENT 300 100 1 0.3 (V) BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) 0 IC —— 600 (mA) IC 0.8 Ta=25℃ Ta=100℃ 0.6 β=10 β=10 10 0.4 1 10 3 100 30 COLLECTOR CURRENT IC VBE Cob/ Cib 100 —— 600 100 COLLECTOR CURRENT IC (mA) VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ Ta=100℃ Cib C (pF) 100 30 Ta=25℃ 10 10 Cob 3 1 0.2 0.4 0.6 0.8 BASE-EMITTER VOLTAGE fT 1000 —— VBE 1 0.1 1.0 1 0.3 (V) IC PC 750 10 3 REVERSE BIAS VOLTAGE —— V 20 (V) Ta COLLECTOR POWER DISSIPATION PC (mW) (MHz) COMMON EMITTER VCE=10V Ta=25℃ fT TRANSITION FREQUENCY 30 10 (mA) CAPACITANCE IC COLLECTOR CURRENT —— 3 COMMON EMITTER VCE=1V (mA) 600 IC 1 600 300 100 10 COLLECTOR CURRENT www.cj-elec.com 100 30 IC (mA) 625 500 375 250 125 0 0 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) D,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 D,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 D,Dec,2015