30fa01fe411b4b67f8dbb2b11dc16da4

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate MOSFETS
2N7000
MOSFET (N-Channel)
V(BR)DSS
ID
RDS(on)MAX
TO-92
[email protected] 60 V
200mA
[email protected] 1. SOURCE
2. GATE
3. DRAIN
APPLICATION
Load Switch for Portable Devices
z DC/DC Converter
FEATURE
z
High density cell design for low RDS(ON)
Voltage controlled small signal switch
z
z
Rugged and reliable
z
High saturation current capability
z
Equivalent Circuit
MARKING
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Value
Unit
VDS
60
V
Continuous Drain Current
ID
0.2
A
Power Dissipation
PD
0.625
W
RθJA
200
℃/W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 ~+150
Drain-Source Voltage
Thermal Resistance from Junction to Ambient
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Symbol
1
℃
D,Sep,2014
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage*
Symbol
Test
conditions
Min
V(BR)DSS
VGS=0 V, ID=10μA
60
V(GS)th
VDS=VGS, ID=1mA
0.8
Typ
Max
3
Unit
V
Gate-body Leakage
lGSS
VDS=0 V, VGS=±15 V
±10
nA
Zero Gate Voltage Drain Current
IDSS
VDS=60 V, VGS=0 V
1
μA
On-state Drain Current
ID(ON)
VGS=4.5 V, VDS=10 V
Drain-Source On-Resistance*
RDS(on)
Forward Trans conductance*
gfs
Drain-source on-voltage*
VDS(on)
Input Capacitance **
Ciss
Output Capacitance **
Coss
Reverse Transfer Capacitance **
Crss
Turn-on Time **
td(on)
Turn-off Time **
td(off)
75
mA
VGS=4.5V, ID=75mA
6
VGS=10V, ID=500mA
5
VDS=10 V, ID=200mA
100
Ω
ms
VGS=10V, ID=500mA
2.5
V
VGS=4.5V, ID=75mA
0.45
V
60
VDS=25V, VGS=0V, f=1MHz
25
pF
5
VDD=15 V, RL=30 Ω
ID=500mA,VGEN=10 V
RG=25 Ω
10
10
ns
*Pulse test
**These parameters have no way to verify.
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2
D,Sep,2014
Typical Characteristics
Output Characteristics
Transfer Characteristics
1.8
1.0
VGS=10V
Ta=25℃
Pulsed
9V
8V
7V
1.5
6V
0.8
(A)
0.9
4V
0.6
ID
DRAIN CURRENT
ID
1.2
0.6
DRAIN CURRENT
(A)
5V
0.4
0.2
VGS=3V
0.3
0.0
0.0
0
2
4
6
DRAIN TO SOURCE VOLTAGE
RDS(ON)
VDS
8
0
(V)
2
4
6
GATE TO SOURCE VOLTAGE
VGS
8
(V)
RDS(ON) —— VGS
—— ID
6
4
Ta=25℃
Pulsed
Ta=25℃
Pulsed
5
( Ω)
( Ω)
3
2
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
RDS(ON)
4
VGS= 4.5V
VGS=10V
1
3
2
ID=50mA
1
ID=500mA
0
0.0
0
0.2
0.4
0.6
DRAIN CURRENT
ID
0.8
0
1.0
(A)
4
8
12
GATE TO SOURCE VOLTAGE
16
VGS
20
(V)
IS —— VSD
1
SOURCE CURRENT
IS (A)
Ta=25℃
Pulsed
0.1
0.01
1E-3
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
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1.0
1.2
VSD (V)
3
D,Sep,2014
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Symbol
A
A1
b
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
Min.
Max.
3.400
3.600
1.150
1.350
0.380
0.550
0.410
0.510
4.400
4.600
3.430
4.400
4.600
1.270 TYP.
2.440
2.640
14.100
14.500
1.600
0.000
0.380
Dimensions In Inches
Min.
Max.
0.134
0.142
0.045
0.053
0.015
0.022
0.016
0.020
0.173
0.181
0.135
0.173
0.181
0.050 TYP.
0.096
0.104
0.555
0.571
0.063
0.000
0.015
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