37adf4f62a9d5c7d95ade3307908b44c

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encap sulate MOSFETS
2N7002X
V(BR)DSS
60 V
MOSFET( N-Channel )
ID
RDS(on)MAX
SOT-89-3L
[email protected] [email protected] 115mA
1.GATE
11
2
2 3
3
2. DRAIN
3. SOURCE
APPLICATION
Load Switch for Portable Devices
z DC/DC Converter
FEA TURES
z High density cell design for low RDS(on)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
z
Equivalent Circuit
MARKING
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
60
V
VGS
ID
Gate -Source Voltage
Drain Current
20
115
V
mA
PD
Power Dissipation
500
mW
TJ
Junction Temperature
150
℃
TSTG
Storage Temperature
-55~+150
℃
RθJA
Thermal Resistance from Junction to Ambient
www.cj-elec.com
1
250
℃/W
G,Apr,2015
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test
conditions
Min
Drain-source breakdown voltage
V(BR)DSS
VGS=0V,ID=250µA
60
Gate-threshold voltage*
V(GS)th
VDS=VGS, ID=250µA
1
lGSS
VDS=0V, VGS= ± 20 V
Gate-body leakage
Zero gate voltage drain current
IDSS
Drain-source on-resistance*
RDS(on)
Forward tranconductance*
g fs
Drain-source on-voltage
VDS(on)
Diode forward voltage*
VSD
Turn-on time **
td(on)
Turn-off time **
td(off)
Input capacitance**
Ciss
Output capacitance **
Coss
Reverse transfer capacitance **
Crss
VDS=60V, VGS=0V
Typ
Max
2.5
nA
80
nA
5
VGS=5V, ID=50mA
7
VDD=25V,RL=50 Ω ,ID=500mA,
VGEN=10V,RG=25 Ω
80
0.5
0.05
0.55
V
± 80
VGS=10V, ID=500mA
VDS=10V, ID=200mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
IS=115mA,VGS=0V
Unit
500
3.75
0.375
1.2
20
40
Ω
ms
V
V
V
ns
50
VDS=25V, VGS=0V,f=1MHz
25
pF
5
* Pulse Test: Pulse width ≤300µs,duty cycle≤2%.
** These parameters have no way to verify.
www.cj-elec.com
2
G,Apr,2015
Typical Characteristics
Transfer Characteristics
Output Characteristics
1.0
1.4
Ta=25℃ VGS=10V,9V,8V,7V,6V
Ta=25℃
VGS=5V
Pulsed
Pulsed
1.2
(A)
ID
0.6
0.8
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
0.8
1.0
VGS=4V
0.6
0.4
0.4
0.2
VGS=3V
0.2
0.0
0.0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
VDS
0
5
RDS(ON) —— ID
RDS(ON) ——
3
4
6
VGS
(V)
VGS
6
Ta=25℃
Pulsed
Pulsed
( Ω)
Ta=25℃
RDS(ON)
( Ω)
2
ON-RESISTANCE
RDS(ON)
ON-RESISTANCE
2
GATE TO SOURCE VOLTAGE
(V)
VGS=5V
1
VGS=10V
0
0.0
4
ID=500mA
2
ID=50mA
0
0.2
0.4
0.6
DRAIN CURRENT
0.8
ID
1.0
0
6
GATE TO SOURCE VOLTAGE
(A)
12
VGS
18
(V)
IS —— VSD
2
Ta=25℃
SOURCE CURRENT
IS (A)
1
Pulsed
0.3
0.1
0.03
0.01
3E-3
1E-3
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
1.2
1.4
VSD (V)
3 G,Apr,2015
SOT-89-3L Package Outline Dimensions
Dimensions In Millimeters
Max
Min
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF.
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
0.091
0.102
0.155
0.167
0.060 TYP.
0.118 TYP.
0.035
0.047
SOT-89-3L Suggested Pad Layout
www.cj-elec.com
4
G,Apr,2015
SOT-89-3L Tape and Reel
www.cj-elec.com
5
G,Apr,2015