1a75dcda9bd415b068fc7a67048e4247

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-126 Plastic-Encapsulate Transistors
3DD13002
TRANSISTOR (NPN)
TO-126
· power switching applications
1.BASE
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Value
Unit
Collector -Base Voltage
600
V
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
1
A
PC
Collector Power Dissipation
1.25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
VCBO
VCEO
VEBO
Parameter
2.COLLECTOR
3.EMITTER
℃
ELECTRICAL CHARACTERISTICS (Ta=25 ℃unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA,IE=0
600
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA,IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA,IC=0
ICBO
VCB= 600V,IE=0
100
µA
ICEO
VCB= 400V,IE=0
100
µA
IEBO
VEB= 7V,IC=0
100
µA
hFE1
VCE= 10 V, IC= 200mA
9
hFE2
VCE= 10 V, IC= 0.25mA
5
Collector cut-off current
Emitter cut-off current
Dc current gain
V
6
40
Collector-emitter saturation voltage
VCE(sat)
IC=200mA, IB= 40mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=200mA, IB= 40mA
1.1
V
Transition frequency
fT
Fall time
tf
Storage time
ts
VCE=10V, IC=100mA
f =1MHz
5
MHz
IC=1A, IB1=-IB2=0.2A
VCC=100V
0.5
µs
2.5
µs
CLASSIFICATION OF hFE1
Range
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9-15
15-20
20-25
1
25-30
30-35
35-40
D,Oct,2014
Typical Characteristics
Typical Characteristics
3DD13002
Static Characteristic
COMMON
EMITTER
Ta=25℃
200
——
IC
10mA
Ta=100℃
9mA
DC CURRENT GAIN hFE
COLLECTOR CURRENT IC (mA)
hFE
100
250
8mA
150
7mA
6mA
5mA
100
4mA
Ta=25℃
10
3mA
50
COMMON EMITTER
VCE= 10V
2mA
IB=1mA
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VCEsat
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
1000
——
IC
Ta=25℃
β=5
100
COLLECTOR CURREMT
IC
——
10
100
fT
10
1
COMMON EMITTER
VCE=10V
0.1
0.0
β=5
5
0.6
0.9
Ta=25℃
100
COLLECTOR CURRENT
Cob/Cib
——
VCB/VEB
Ta=25 ℃
Cib
Cob
——
IC
200
(mA)
Ta
1.25
1.00
0.75
0.50
0.25
0.00
1
REVERSE VOLTAGE
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PC
1.50
COLLECTOR POWER DISSIPATION
PC (W)
CAPACITANCE C (pF)
1
0.1
IC
10
1.2
100
10
(mA)
1
0.3
f=1MHz
IE=0/IC=0
1000
——
IC
COMMON EMITTER
VCE=10V
BASE-EMMITER VOLTAGE VBE (V)
5000
1000
COLLECTOR CURREMT
T =2
5℃
a
10
IC
Ta=100 ℃
(mA)
100
1000
(mA)
Ta=25℃
0.1
VBE
T =1
00℃
a
COLLECTOR CURRENT IC (mA)
1000
——
1
1000
IC
100
IC
TRANSITION FREQUENCY fT (MHz)
10
10
VBEsat
10
100
5
1
COLLECTOR CURRENT
Ta=100 ℃
10
1
0.1
10
VCE (V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
0
10
V
0
20
25
50
75
AMBIENT TEMPERATURE
(V)
2
100
Ta
125
150
(℃ )
D,Oct,2014
TO-126 Package Outline Dimensions
Symbol
A
A1
b
b1
c
D
E
e
e1
h
L
L1
P
Φ
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Dimensions In Millimeters
Min
Max
2.500
2.900
1.100
1.500
0.660
0.860
1.170
1.370
0.450
0.600
7.400
7.800
10.600
11.000
2.290 TYP
4.480
4.680
0.000
0.300
15.300
15.700
2.100
2.300
3.900
4.100
3.000
3.200
3
Dimensions In Inches
Min
Max
0.098
0.114
0.043
0.059
0.026
0.034
0.046
0.054
0.018
0.024
0.291
0.307
0.417
0.433
0.090 TYP
0.176
0.184
0.000
0.012
0.602
0.618
0.083
0.091
0.154
0.161
0.118
0.126
D,Oct,2014