52c396de0cf08413d2af788ba05a6411

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×3 -6L-C Plastic-Encapsulate MOSFETS
CJCD2005
Dual N-Channel MOSFET
DFNWB2×3-6L-C
V(BR)DSS
ID
RDS(on)MAX
[email protected] V
20V
14mΩ @4.5V
[email protected]
8A
19 [email protected]
[email protected]
DESCRIPTION
The CJCD2005 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
Equivalent Circuit
MARKING:
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
8
A
Pulsed Drain Current
IDM *
30
A
Thermal Resistance from Junction to Ambient
RθJA
125
℃/W
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
TL
260
℃
*Repetitive rating:Pluse width limited by junction temperature.
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C,May,2015
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 Я unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =16V,VGS = 0V
10
µA
Gate-body leakage current
IGSS
VGS =±10V, VDS = 0V
±10
µA
VGS(th)
VDS =VGS, ID =250µA
1
V
VGS =10V, ID =8A
13
mΩ
VGS =4.5V, ID =5A
14
mΩ
VGS =3.8V, ID =5A
15.5
mΩ
VGS =2.5V, ID =4A
19
mΩ
VGS =1.8V, ID =3A
27
mΩ
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
RDS(on)
Forward tranconductance (note 1)
gFS
VDS =5V, ID =8A
Diode forward voltage(note 1)
VSD
IS=1A, VGS = 0V
20
V
0.5
S
36
1
V
DYNAMIC PARAMETERS (note 2)
Input Capacitance
Ciss
1800
pF
Output Capacitance
Coss
230
pF
Reverse Transfer Capacitance
Crss
200
pF
Total gate charge
Qg
17.9
nC
Gate-source charge
Qgs
1.5
nC
Gate-drain charge
Qgd
4.7
nC
td(on)
2.5
ns
VDS =10V,VGS =0V,f =1MHz
VDS =10V,VGS =4.5V,ID =8A
SWITCHING PARAMETERS(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
VGS=10V,VDD=10V,
7.2
ns
td(off)
RL=1.2Ω,RGEN=3Ω
49
ns
10.8
ns
tf
Notes :
1.
Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.
2.
Guaranteed by design, not subject to production testing.
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C,May,2015
Typical Characteristics
Transfer Characteristics
Output Characteristics
25
10
Pulsed
VDS=16V
VGS=10V、3.0V、2V
Pulsed
20
ID
15
6
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
(A)
8
VGS=1.5V
10
5
4
Ta=100℃
Ta=25℃
2
VGS=1.2V
0
0
2
4
6
DRAIN TO SOURCE VOLTAGE
0.4
0.2
(V)
0.6
0.8
1.0
1.2
GATE TO SOURCE VOLTAGE
ID
RDS(ON) ——
40
VDS
0
0.0
10
8
1.4
VGS
RDS(ON)—— VGS
100
Ta=25℃
Ta=25℃
(mΩ)
30
RDS(ON)
VGS=1.8V
25
20
ON-RESISTANCE
(mΩ)
RDS(ON)
ON-RESISTANCE
Pulsed
ID=8A
Pulsed
35
1.6
(V)
VGS=2.5V
15
10
VGS=10V
80
60
40
Ta=100℃
20
5
Ta=25℃
0
0
1
2
3
4
5
6
DRAIN CURRENT
IS ——
ID
7
8
0
VSD
6
8
10
VGS
12
(V)
Threshold Voltage
750
Ta=25℃
700
Pulsed
VTH
(mV)
1
0.1
THRESHOLD VOLTAGE
IS (A)
4
GATE TO SOURCE VOLTAGE
(A)
10
SOURCE CURRENT
2
Ta=100℃
Ta=25℃
0.01
1E-3
650
600
ID=250uA
550
500
450
400
1E-4
0.0
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
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1.0
350
25
1.2
50
75
JUNCTION TEMPERATURE
VSD (V)
3
100
TJ
125
(℃ )
C,May,2015
C
Symbol
A
A1
A3
D
E
D1
E1
k
b
e
L
Dimensions In Millimeters
Min.
Max.
0.700
0.800
0.000
0.050
0.203REF.
1.950
2.050
2.950
3.050
1.400
1.600
1.600
1.800
0.200MIN.
0.200
0.300
0.500TYP.
0.300
0.400
Dimensions In Inches
Min.
Max.
0.028
0.031
0.000
0.002
0.008REF.
0.077
0.081
0.116
0.120
0.063
0.055
0.063
0.071
0.008MIN.
0.008
0.012
0.020TYP.
0.012
0.016
C
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DFNWB2X3-6L Tape and Reel
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5
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