JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8810 V(BR)DSS Dual N-Channel MOSFET ID RDS(on)MAX SOT-23-6L 20mΩ@10 V 20V 22mΩ @4.5V 24 mΩ@3.8V 7A 26mΩ @2.5V 35mΩ@1.8V DESCRIPTION The CJL8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 7 A Pulsed Drain Current IDM * 30 A Thermal Resistance from Junction to Ambient RθJA ** 208.3 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ Continuous Drain Current *Repetitive rating：Pluse width limited by junction temperature. Surface mounted on FR4 board using 1 square inch pad size,1oz single-side copper. ** www.cj-elec.com 1 H,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 Я unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±8V, VDS = 0V ±10 µA 0.77 1 V VGS =10V, ID =7A 14 20 mΩ VGS =4.5V, ID =6.6A 16 22 mΩ VGS =3.8V, ID =6A 17 24 mΩ VGS =2.5V, ID =5.5A 20 26 mΩ VGS =1.8V, ID =5A 28 35 mΩ Gate threshold voltage (note 1) Drain-source on-resistance (note 1) VGS(th) RDS(on) VDS =VGS, ID =250µA Forward tranconductance (note 1) gFS VDS =5V, ID =7A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V 20 0.4 V 9 S 1 V DYNAMIC PARAMETERS (note 2) 1150 pF 185 pF Crss 145 pF Total gate charge Qg 15 nC Gate-source charge Qgs 0.8 nC Gate-drain charge Qgd 3.2 nC td(on) 6 ns VGS=5V,VDD=10V, 13 ns RL=1.35Ω,RGEN=3Ω 52 ns 16 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =7A SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 H,Aug,2015 7\SLFDO&KDUDFWHULVWLFV Transfer Characteristics Output Characteristics 20 22 2.2V Pulsed VDS=5V 20 Pulsed DRAIN CURRENT DRAIN CURRENT 1.8V 12 8 15 ID (A) 16 ID (A) 2.0V 1.5V 10 Ta=100℃ 5 Ta=25℃ 4 VGS=1.2V 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 80 5 VDS 0 6 0 1 (V) 2 3 GATE TO SOURCE VOLTAGE ID RDS(ON) 80 —— VGS (V) VGS Ta=25℃ Ta=25℃ Pulsed (mΩ) 40 ON-RESISTANCE ON-RESISTANCE 60 RDS(ON) 60 RDS(ON) (mΩ) Pulsed VGS=2V VGS=10V 20 40 ID=3A 20 0 0 0 4 8 12 DRAIN CURRENT ID 16 0 20 2 4 6 GATE TO SOURCE VOLTAGE (A) 10 (V) IS —— VSD Threshold Voltage 10 0.80 8 VGS Ta=25℃ IS (A) 0.75 SOURCE CURRENT THRESHOLD VOLTAGE VTH (V) Pulsed 0.70 ID=250uA 0.65 1 0.1 0.60 0.55 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 0.01 0.4 125 (℃ ) 0.6 0.8 SOURCE TO DRAIN VOLTAGE 3 1.0 1.2 VSD (V) H,Aug,2015 SOT-23-6L Package Outline Dimensions Symbol A A1 A2 b c D E1 E e e1 L θ Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° SOT-23-6L Suggested Pad Layout www.cj-elec.com 4 H,Aug,2015 SOT-23-6L Tape and Reel www.cj-elec.com 5 H,Aug,2015