28ddb17b74ac4c3c1b405eafa9de9431

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL8820
Dual N-Channel MOSFET
V(BR)DSS
ID
RDS(on)MAX
SOT-23-6L
[email protected] V
20V
24mΩ @4.5V
28 [email protected]
7A
32mΩ @2.5V
[email protected]
DESCRIPTION
The CJL8820 uses advanced trench technology to provide excellent
RDS(ON) and low gate charge. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,facilitated by its
common-drain configuration.
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
7
A
Pulsed Drain Current(note1)
IDM *
25
A
Thermal Resistance from Junction to Ambient
RθJA
125
℃/W
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
TL
260
℃
Continuous Drain Current
*Repetitive rating:Pluse width limited by junction temperature.
www.cj-elec.com
1
F,May,2015
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 Я unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =16V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±10V, VDS = 0V
VGS(th)
VDS =VGS, ID =250µA
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
RDS(on)
20
V
1
µA
±10
µA
1.1
V
VGS =10V, ID =7A
21
mΩ
VGS =4.5V, ID =6.6A
24
mΩ
VGS =3.8V, ID =6A
28
mΩ
VGS =2.5V, ID =5.5A
32
mΩ
VGS =1.8V, ID =2A
50
mΩ
Forward tranconductance (note 1)
gFS
VDS =5V, ID =7A
Diode forward voltage(note 1)
VSD
IS=1A, VGS = 0V
0.5
9
S
1
V
DYNAMIC PARAMETERS (note 2)
Input Capacitance
Ciss
650
pF
Output Capacitance
Coss
140
pF
Reverse Transfer Capacitance
Crss
60
pF
Total gate charge
Qg
8
nC
Gate-source charge
Qgs
2.5
nC
Gate-drain charge
Qgd
3
nC
td(on)
0.5
ns
VDS =10V,VGS =0V,f =1MHz
VDS =10V,VGS =4.5V,ID =6A
SWITCHING PARAMETERS(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
VGS=5V,VDD=10V,
1
ns
td(off)
RL=1.5Ω,RGEN=3Ω
12
ns
4
ns
tf
Notes :
1.
Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.
2.
Guaranteed by design, not subject to production testing.
www.cj-elec.com
2
F,May,2015
7\SLFDO&KDUDFWHULVWLFV
Transfer Characteristics
Output Characteristics
20
22
2.2V
Pulsed
VDS=5V
20
Pulsed
DRAIN CURRENT
DRAIN CURRENT
1.8V
12
8
15
ID
(A)
16
ID
(A)
2.0V
1.5V
10
Ta=100℃
5
Ta=25℃
4
VGS=1.2V
0
0
1
2
3
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
80
5
4
VDS
0
6
0
1
(V)
2
3
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
80
——
VGS
(V)
VGS
Ta=25℃
Ta=25℃
Pulsed
(mΩ)
40
ON-RESISTANCE
ON-RESISTANCE
60
RDS(ON)
60
RDS(ON)
(mΩ)
Pulsed
VGS=2V
VGS=10V
20
40
ID=3A
20
0
0
0
4
8
12
DRAIN CURRENT
ID
16
0
20
2
4
6
GATE TO SOURCE VOLTAGE
(A)
10
(V)
IS —— VSD
Threshold Voltage
10
0.80
8
VGS
Ta=25℃
IS (A)
0.75
SOURCE CURRENT
THRESHOLD VOLTAGE
VTH
(V)
Pulsed
0.70
ID=250uA
0.65
1
0.1
0.60
0.55
25
50
75
AMBIENT TEMPERATURE
www.cj-elec.com
100
Ta
0.01
0.4
125
(℃ )
0.6
0.8
SOURCE TO DRAIN VOLTAGE
3
1.0
1.2
VSD (V)
F,May,2015
SOT-23-6L Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
θ
Dimensions In Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
SOT-23-6L Suggested Pad Layout
www.cj-elec.com
4
F,May,2015
SOT-23-6L Tape and Reel
www.cj-elec.com
5
F,Mar,2015