JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BCX38 TRANSISTOR (NPN) 1.EMITTER FEATURES z High DC Current Gain 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 625 mW Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Test conditions Min Typ Max Unit IC= 0.01mA,IE=0 80 V IC=10mA,IB=0 60 V IE=0.01mA,IC=0 10 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=8V,IC=0 0.1 μA IC=800mA,IB=8mA 1.25 V IC=800mA, VCE=5V 1.8 V VCE=5V, IC=100mA hFE(1)* DC current gain Base-emitter voltage 500 BCX38B 2000 BCX38C 5000 VCE=5V, IC=500mA hFE(2) Collector-emitter saturation voltage BCX38A * VCE(sat) VBE * * BCX38A 1000 BCX38B 4000 BCX38C 10000 *Pulse test www.cj-elec.com 1 B,Oct,2014 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.173 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 2 B,Oct,2014 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP3 B,Oct,2014