JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BST52 TRANSISTOR (NPN) 1. BASE FEATURES z Low Voltage z High Current z Integrated Diode and Resistor 2. COLLECTOR 3. EMITTER APPLICATIONS z Industrial Switching Applications: Print Hammer, Solenoid, Relay and Lamp Driving MARKING:AS3 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 80 V IC Collector Current 500 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W RθJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO Test conditions Min Typ Max Unit IC=100µA,IE=0 90 V 80 V Collector-emitter sustain voltage VCES VBE=0,IC=100µA Collector cut-off current ICES VBE=0, VCE=80V 50 nA Emitter cut-off current IEBO VEB=4V,IC=0 50 nA DC current gain hFE VCE=10V, IC=150mA 1000 VCE=10V, IC=500mA 2000 Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=0.5mA 1.3 V Base-emitter saturation voltage VBE(sat) IC=500mA,IB=0.5mA 1.9 V Transition frequency fT VCE=5V,IC=500mA, f=100MHz 200 MHz A,Nov,2010