JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors TO-251-3L MJD112 TRANSISTOR (NPN) 1. BASE FEATURES Complementary Darlington Power Transistors Dpak for Surface Mount Applications 2. COLLECTOR y 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 1 W RθJC Thermal resistance, junction to case 6.25 ℃/W RθJA Thermal resistance, junction to Ambient 71.4 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage IC=1mA,IE 0 V= (BR)CBO 100 V Collector-emitter breakdown voltage V(BR)CEO = IC =30mA,IB 0 100 V Emitter-base breakdown voltage V = IE=5mA,IC 0 (BR)EBO 5 V Collector cut-off current ICBO = VCB=100V,IE 0 20 µA Collector-emitter cut-off current = ICEO VCE=50V,IE 0 20 µA 2 mA Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance www.cj-elec.com = IEBO VEB=5V,IC 0 hFE(1) = VCE=3V,IC 500mA 500 hFE(2) = VCE=3V,IC 2A 1000 h= VCE=3V,IC 4A FE(3) 200 = VCE(sat)1 IC=2A,IB 8mA 12000 2 V V = IC=4A,IB 40mA CE(sat)2 3 V = VBE VCE=3V,IC 2A 2.8 V fT Cob VCE=10V,I =C 0.75A,f = 1MHz V= = CB=10V,I E 0,f 0.1MHz 1 25 MHz 100 pF D,Oct,2014 Typical Characteristics Typical Characteristics Static Characteristic 4000 0.6mA DC CURRENT GAIN hFE 0.5mA 0.4mA 2000 0.3mA 1000 2 3 100 Ta=25℃ 10 COMMON EMITTER VCE= 3V 4 1 —— 5 6 1 100 1000 COLLECTOR CURRENT IC VCEsat 10 Ta=25℃ Ta=100 ℃ —— IC IC Ta=25℃ 1 Ta=100 ℃ 0.1 COLLECTOR CURRENT Cob/Cib 300 —— IC β=100 0.01 2000 1000 (mA) VCB/VEB 1000 COLLECTOR CURRENT IC (mA) Ta=25 ℃ 100 CAPACITANCE CT Cob 1 10 REVERSE VOLTAGE fT 80 V 100 10 0.0 20 —— IC (mA) VBE COMMON EMITTER VCE=3V 0.5 (V) 1.0 1.5 2.0 BASE-EMMITER VOLTAGE VBE (V) IC —— IC 2000 Cib 4000 1000 COLLECTOR CURRENT f=1MHz IE=0/IC=0 0.1 100 30 T =2 5℃ a 100 2000 (mA) β=250 0.1 30 10 10 VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) VCEsat 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) Ta=100℃ 1 1 COLLECTOR-EMITTER VOLTAGE (pF) IC IB=0.2mA 0 0 PC 1.5 COLLECTOR POWER DISSIPATION PC (W) COMMON EMITTER VCE= 10V TRANSITION FREQUENCY fT (MHz) 1000 —— T =1 00℃ a COLLECTOR CURRENT IC (mA) 0.9mA 0.8mA 0.7mA 3000 hFE 10000 1mA COMMON EMITTER Ta=25℃ MJD112 Ta=25℃ 60 40 —— Ta 1.0 0.5 20 0.0 0 100 200 300 400 500 COLLECTOR CURRENT www.cj-elec.com 600 IC 700 0 800 25 50 75 100 AMBIENT TEMPERATURE (mA) 2 125 Ta 150 (℃ ) D,Oct,2014 TO-251-3L Package Outline Dimensions Symbol A A1 B b b1 c c1 D D1 E e e1 L www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.400 1.050 1.350 1.350 1.650 0.500 0.700 0.700 0.900 0.430 0.580 0.430 0.580 6.350 6.650 5.200 5.400 5.400 5.700 2.300 TYP. 4.500 4.700 7.500 7.900 3 Dimensions In Inches Min. Max. 0.087 0.094 0.042 0.054 0.053 0.065 0.020 0.028 0.028 0.035 0.017 0.023 0.017 0.023 0.250 0.262 0.205 0.213 0.213 0.224 0.091 TYP. 0.177 0.185 0.295 0.311 D,Oct,2014