JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD122 TRANSISTOR（NPN） TO-252-2L FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR 3.EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 8 A PC Collector Dissipation 1.5 W TJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO Ic=1mA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO Ic=30mA,IB=0 100 V Emitter-base breakdown voltage V(BR)EBO IE=3mA,IC=0 5 V Collector cut-off current ICBO VCB=100V,IE=0 10 µA Collector-emitter cut-off current ICEO VCE=50V,IE=0 10 µA Emitter cut-off current IEBO VEB=5V,IC=0 2 mA hFE(2) VCE=4V,IC=4A 1000 hFE(3) VCE=4V,IC=8A 100 DC current gain Collector-emitter saturation voltage VCE(sat)（1） IC=4A,IB=16mA 2 V VCE(sat)（2） IC=8A,IB=80mA 4 V 4.5 V VBE(sat) IC=8A,IB=80mA Base-emitter voltage* VBE VCE=4V,IC=4A Collector output capacitance Cob Base-emitter saturation voltage www.cj-elec.com 12000 VCB=10V,IE=0,f=0.1MHz 1 2.8 V 200 pF C,Oct,2014 Typical Characteristics Typical Characterisitics MJD122 hFE —— IC Static Characteristic 100000 5 0.52mA COMMON EMITTER VCE=4V 0.48mA 0.44mA 4 0.4mA 0.36mA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) COMMON EMITTER Ta=25℃ 0.32mA 3 0.28mA 0.24mA 2 0.2mA Ta=100℃ 10000 Ta=25℃ 1000 1 IB=0.16mA 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VCEsat 2.0 —— VCE 100 0.1 5 IC VCEsat 2.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1.6 Ta=100℃ 1.2 Ta=25℃ 0.8 1 1.6 Ta=100℃ 1.2 Ta=25℃ 0.8 8 1 (A) COLLECTOR CURRENT IC IC (A) —— VBE 8 COMMON EMITTER VCE=4V β=100 COLLECTOR CURRENT IC (A) 1.8 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) (A) β=100 —— IC VBEsat 2.0 IC IC —— IC 0.4 0.1 8 COLLECTOR CURRENT 8 COLLECTOR CURRENT β=250 0.4 0.1 1 (V) 1.6 Ta=25℃ 1.4 Ta=100℃ 1.2 1.0 0.1 1 1000 Cob/ Cib IC 1 Ta=25℃ 0.1 1.0 8 COLLECTOR CURRENT Ta=100℃ 1.2 (A) 1.4 1.6 1.8 2.0 BASE-EMMITER VOLTAGE VBE (V) —— VCB/ VEB Pc 2.0 —— Ta f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (W) CAPACITANCE C (pF) Ta=25℃ Cib 100 Cob 10 0.1 1.0 0.5 0.0 1 REVERSE VOLTAGE www.cj-elec.com 1.5 10 V 0 20 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) C,Oct,2014 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.380 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF. 3 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF. C,Oct,2014 To-252(4R)-2L Tape and Reel www.cj-elec.com 4 C,Oct,2014