128acf3f003b6821402732531c27bf33

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-I Power Management Transistors-MOSFET
CJMNT31
V(BR)DSS/VR
PNP Power Transistor with N-MOSFET
ID/IC
RDS(on)MAX
[email protected]
[email protected]
[email protected]
[email protected] /
20V
-30V
DFNWB2×2-6L-I
0.69A -2A
FEATURES
APPLICATIONS
z Charging circuit
z Other power management in portable equipments
z Ultra low collector-to-emitter saturation voltage
z High DC current gain
z Small package DFNWB2x2-6L-I
Equivalent circuit
MARKING: 31
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
PNP Transistor
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-6
V
Collector Current-Continuous(Note1)
-3
A
IC
Collector Current-Continuous(Note2)
-2
A
Collector Current-Pulse(Note3)
-6
A
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±6
V
Drain Current -Continuous(Note1)
0.8
A
Drain Current -Continuous(Note2)
0.69
A
1.4
A
0.7
W
ICM
N-MOSFET
ID
IDM
Drain Current - Pulse(Note3)
Power Dissipation, Temperature and Thermal Resistance
PD
PC
RθJA
Tj
Tstg
TL
Power Dissipation
2.5
W
Thermal Resistance from Junction to Ambient
179
℃/W
Junction Temperature
150
℃
Storage Temperature
-55~+150
℃
260
℃
Power Dissipation (Tc=25℃ ,Note1)
Lead Temperature
1G,May,2015
ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
PNP Transistor
Collector-base breakdown voltage
V(BR)CBO
IC=-1mA,IE=0
-30
V
Collector-emitter breakdown
V(BR)CEO
IC=-10mA,IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
-6
V
Collector cut-off current
ICBO
VCB=-30V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-2V, IC=-1A
100
300
Collector-emitter saturation voltage
VCE(sat)
IC=-2A,IB=-200mA
-0.2
-0.4
V
Base-emitter saturation voltage
VBE(sat)
IC=-2A,IB=-200mA
-1
-1.5
V
Base-emitter voltage
VBE(on)
VCE=-2V, IC=-500mA
-0.7
-1
V
N-MOSFET
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR)DSS
VGS =0V, ID=250µA
Zero gate voltage drain current
IDSS
VDS =20V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS =±5V, VDS = 0V
±5
µA
VGS(th)
VDS =VGS, ID =250µA
1
V
VGS =4.5V, ID =0.55A
360
mΩ
VGS =2.5V, ID =0.45A
410
mΩ
VGS =1.8V, ID =0.35A
480
mΩ
VGS =1.5V, ID =0.1A
1.3
Ω
1
V
Gate threshold voltage
Drain-source on-resistance
Diode forward voltage
RDS(on)
VSD
IS=0.35A, VGS = 0V
20
V
0.45
0.5
DYNAMIC PARAMETERS (note 4)
Input Capacitance
Ciss
50
pF
Output Capacitance
Coss
13
pF
Reverse Transfer Capacitance
Crss
8
pF
td(on)
22
ns
80
ns
700
ns
650
ns
VDS =10V,VGS =0V,f =1MHz
SWITCHING PARAMETERS (note 4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
tr
td(off)
Turn-off fall time
VGS=4.5V,VDS=10V,
RL=10Ω,RGEN=6Ω, ID=0.5A
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =10V,VGS =4.5V,
ID =0.6A
1.15
nC
0.15
nC
0.23
nC
Note:
1、 Surface mounted on FR-4 board using 1 square inch pad size, 1oz copper
2、 Surface mounted on FR-4 board using minimum pad size, 1oz copper
3、 Pulse test: pulse width =300μs, duty cycle≤ 2%
4、 These parameters have no way to verify.
2G,May,2015
PNP Transistor Typical Characteristics
PNP Transistor
Static Characteristic
2000
COMMON
EMITTER
Ta=25℃
1600
hFE
-3.5mA
1200
-3mA
1000
-2.5mA
800
-2mA
600
-1.5mA
400
400
Ta=100℃
350
300
Ta=25℃
250
200
-1mA
150
COMMON EMITTER
VCE= 2V
IB=-0.5mA
0
100
-0
-2
-4
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
-12
IC
Ta=25℃
-0.6
Ta=100 ℃
-0.4
-0.2
β=10
-100
-10
COLLECTOR CURREMT
PC
1200
——
VCEsat
-1000
IC
IC
——
(mA)
IC
-100
Ta=100 ℃
Ta=25℃
-10
β=10
-1
-3000
-10
-100
COLLECTOR CURREMT
(mA)
Ta
500
Cob/Cib
——
-1000
IC
VCB/VEB
f=1MHz
IE=0/IC=0
(pF)
400
Ta=25 ℃
100
Cob
C
CAPACITANCE
600
-3000
(mA)
Cib
1000
800
-3000
-1000
-1
-0.0
-1
-100
-10
COLLECTOR CURRENT
-1000
-1.0
-0.8
-1
VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-1.2
COLLECTOR POWER DISSIPATION
PC (mW)
IC
450
-4mA
1400
200
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
——
-5mA
-4.5mA
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
1800
hFE
500
10
200
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
1
-0.1
-1
REVERSE VOLTAGE
-10
V
-20
(V)
3G,May,2015
N-MOSFET Typical Characteristics
N -channel Characteristics
Output Characteristics
5
Transfer Characteristics
500
Ta=25℃
VGS=5.5V
Pulsed
VDS=16V
Pulsed
VGS=4.5V
4
400
(mA)
ID
3
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
VGS=3.5V
VGS=2.5V
2
1
300
Ta=100℃
200
Ta=25℃
100
VGS=1.5V
0
0.0
0.5
1.0
1.5
2.0
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
600
2.5
VDS
0
0.0
3.0
0.5
(V)
1.0
1.5
2.0
2.5
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
Ta=25℃
——
VGS
3.0
(V)
VGS
440
Pulsed
(mΩ)
RDS(ON)
VGS=1.8V
ID=600mA
400
380
400
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(mΩ)
420
500
VGS=2.5V
300
VGS=4.5V
340
Ta=100℃
Pulsed
320
Ta=25℃
300
200
100
360
Pulsed
200
300
400
DRAIN CURRENT
ID
500
280
1.5
600
IS —— VSD
500
2.5
2.0
3.0
3.5
4.0
GATE TO SOURCE VOLTAGE
(mA)
VGS
4.5
5.0
(V)
Threshold Voltage
1.00
0.95
VTH
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (mA)
(V)
100
Ta=100℃
10
Pulsed
Ta=25℃
Pulsed
1
0.90
0.85
0.80
ID=250uA
0.75
0.70
0.65
0.60
0.55
0.1
0.0
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
1.0
VSD (V)
1.2
0.50
25
50
75
JUNCTION TEMPERATURE
100
TJ
125
(℃ )
4G,May,2015
I
N1
Symbol
A
A1
A3
D
E
D1
E1
D2
E2
e1
e2
k
b
e
L
Dimensions In Millimeters
Max.
Min.
0.700
0.800
0.000
0.050
0.203REF.
1.924
2.076
1.924
2.076
0.850
1.050
0.700
0.900
0.200
0.400
0.700
0.900
0.650TYP.
0.325TYP
0.200MIN.
0.250
0.350
0.650TYP.
0.300
0.400
Dimensions In Inches
Min.
Max.
0.028
0.032
0.000
0.002
0.008REF.
0.076
0.082
0.076
0.082
0.033
0.041
0.028
0.035
0.008
0.016
0.028
0.035
0.026TYP.
0.013TYP
0.008MIN.
0.010
0.014
0.026TYP.
0.012
0.016
I
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5
G,May,2015
DFNWB2X2-6L Tape and Reel
www.cj-elec.com
6
G,May,2015