JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×2-6L-U Power Management Transistors- MOSFET CJMNT32 PNP Power Transistor with N-MOSFET V(BR)DSS/VR ID/IC RDS(on)MAX DFNWB2×2-6L-U 600mΩ@4.5V 20V 650mΩ@2.5V -32V 700mΩ@1.8V / 0.8A D C -1.5A FEATURE z Ultra low collector-to-emitter saturation voltage z High DC current gain z Small package DFNWB2×2-6L-U APPLICATION z Charging circuit z Other power management in portable equipment Equivalent circuit MARKING C 6 1 E G 5 2 S 4 B 3 D ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit PNP Transistor VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -6 V Collector Current-Continuous(Note1) -1.5 A Collector Current-Continuous(Note2) -0.6 A Collector Current-Pulse(Note3) -4 A VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±5 V Continuous Drain Current (note 1) 0.8 A Collector Current-Continuous(Note2) 0.69 A Collector Current-Pulse(Note3) 1.4 A IC ICM N-MOSFET ID IDM Power Dissipation, Temperature and Thermal Resistance PD PowerDissipation 0.7 W PC Power Dissipation (Tc=25℃ ,Note1) 2.5 W RθJA Thermal Resistance from Junction to Ambient Tj Junction Temperature Tstg Storage Te mperature TL Lead Temperature 178.6 150 ℃/W ℃ -55~+150 ℃ 260 ℃ 1 C,May,2015 ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit PNP Transistor IC=-1mA,IE=0 -32 V(BR)CEO IC=-10mA,IB=0 -32 V V(BR)EBO IE=-100uA,IC=0 -6 V Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown Emitter-base breakdown voltage V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 uA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 uA DC current gain hFE VCE=-2V,IC=-0.5A Collecor-emitter saturation voltage VCE(sat) IC=-0.5A,IB=-50mA 100 -0.35 300 V Base-emitter saturation voltage VBE(sat) IC=-0.5A,IB=-50mA -1.5 V Base-emitter voltage VBE(on) VCE=-2V,IC=-500mA -1.1 V V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 100 nA Gate-body leakage current IGSS VGS =±5V, VDS = 0V ±1 uA VGS(th) VDS =VGS, ID =250µA N-MOSFET STATIC PARAMETERS Drain-source breakdown voltage Gate threshold voltage (note 3) Drain-source on-resistance(note 3) Diode forward voltage (note 3) RDS(on) VSD 20 V 1.1 V VGS =4.5V, ID =0.55A 600 mΩ VGS =2.5V, ID =0.5A 650 mΩ VGS =1.8V, ID =0.35A 700 mΩ 1.1 V IS=0.35A, VGS = 0V 0.44 0.5 DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 61 VDS =10V,VGS =0V,f =100KHz 17 pF pF 10 pF 33 ns 102 ns 790 ns 439 ns 1.15 nC 0.15 nC 0.23 nC SWITCHING PARAMETERS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) tf Total Gate Charge Qg Gate-Source Chage Qgs Gage-Drain Charge Qgd VGEN=4.5V,VDD=10V, ID=500mA,RGEN=6Ω RL=10Ω VDS=10V,VGS=4.5V ID=0.6A Notes : 1.Surface mounted on FR4 board using 1 square inch pad size,1oz copper. 2.Surface mounted on FR4 board using the minimum pad size,1oz copper. 3. Pulse test : Pulse width=300μs, duty cycle≤2%. 4. These parameters have no way to verify. www.cj-elec.com 2 C,May,2015 Typical Characteristics PNP Transistor Static Characteristic -0.60 COMMON EMITTER Ta=25℃ -3.2mA -0.50 -2.8mA -0.45 -2.4mA -0.40 -2mA -0.35 -1.6mA -0.30 -0.25 -1.2mA -0.20 -800uA -0.15 —— IC Ta=100℃ DC CURRENT GAIN hFE -3.6mA -4mA -0.55 COLLECTOR CURRENT IC (A) hFE 1000 300 Ta=25℃ 100 30 -0.10 IB=-400uA -0.05 -0.00 -0.0 -1.0 -0.5 -1.5 -2.0 COLLECTOR-EMITTER VOLTAGE VCEsat -1000 —— -2.5 -1 -3.0 -10 (V) VCE IC VBEsat -2000 -1000 -100 COLLECTOR CURRENT IC (mA) IC —— -300 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VCE=-2V 10 -1000 Ta=100℃ -100 Ta=25℃ -30 -10 Ta=25℃ Ta=100℃ -300 -3 β=10 -1 -1 -3 -10 -100 -30 COLLECTOR CURRENT VBE -1500 IC -300 β=10 -100 -1000 -1500 -1 -3 -30 -10 -100 COLLECTOR CURRENT (mA) —— IC Cob/ Cib 100 IC -1000 -1500 -300 (mA) —— VCB/ VEB -1000 Ta=100℃ -100 Ta=25℃ -30 -10 30 Cob 10 3 f=1MHz IE=0/IC=0 -3 -1 -200 Ta=25℃ VCE=-2V -400 -800 -600 BASE-EMMITER VOLTAGE fT 1000 TRANSITION FREQUENCY fT (MHz) CAPACITANCE C (pF) COLLCETOR CURRENT IC (mA) Cib -300 —— -1000 VBE -1200 1 -0.1 -0.3 -1 REVERSE VOLTAGE (mV) -10 -3 V -20 (V) IC 300 100 30 VCE=-10V Ta=25℃ 10 -1 -3 -10 COLLECTOR CURRENT www.cj-elec.com -30 IC -100 (mA) 3 C,May,2015 Typical Characteristics N -channel Characteristics Output Characteristics 5 Transfer Characteristics 500 Ta=25℃ 5.5V VDS=16V Pulsed Pulsed 4.5V 4 400 (mA) ID 3 DRAIN CURRENT DRAIN CURRENT ID (A) 3.5V 2.5V 2 1 300 Ta=100℃ 200 Ta=25℃ 100 VGS=1.5V 0 0.0 0.5 1.0 1.5 2.0 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 600 VDS 0 0.0 3.0 2.5 (V) 0.5 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE ID RDS(ON) 500 —— 2.5 VGS VGS Ta=25℃ Ta=25℃ Pulsed Pulsed VGS=1.8V 300 RDS(ON) RDS(ON) 400 ON-RESISTANCE (mΩ) (mΩ) 500 3.0 (V) ON-RESISTANCE VGS=2.5V VGS=4.5V 200 400 ID=600mA 300 100 0 100 200 200 400 600 DRAIN CURRENT ID 1 800 IS —— VSD 500 3 4 VGS 5 (V) Threshold Voltage 0.85 0.80 THRESHOLD VOLTAGE VTH IS (mA) (V) 100 SOURCE CURRENT 2 GATE TO SOURCE VOLTAGE (mA) Ta=100℃ 10 Pulsed Ta=25℃ Pulsed 1 0.1 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1.0 0.75 ID=250uA 0.70 0.65 0.60 25 1.2 VSD (V) 50 75 JUNCTION TEMPERATURE 4 100 TJ 125 (℃ ) C,May,2015 www.cj-elec.com N3 N4 N1 N6 5 C,May,2015 DFNWB2X2-6L Tape and Reel www.cj-elec.com 6 C,May,2015