b384b414a6260391d16bb76a27d195d6

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-U Power Management Transistors- MOSFET
CJMNT32-W
PNP Power Transistor with N-MOSFET
V(BR)DSS/VCEO
ID/IC
RDS(on)MAX
DFNWB2×2-6L-U
[email protected]
20V
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-30V
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/
0.8A D
C
-1.5A
FEATURE
z Ultra low collector-to-emitter saturation voltage
z High DC current gain
z Small package DFNWB2×2-6L-U
APPLICATION
z Charging circuit
z Other power management in portable equipment
Equivalent circuit
MARKING
C
6
1
E
G
5
2
S
4
B
3
D
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
PNP Transistor
VCBO
Collector-Base Voltage
-32
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-6
V
Collector Current-Continuous(Note1)
-1.5
A
Collector Current-Continuous(Note2)
-0.6
A
Collector Current-Pulse(Note3)
-4
A
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±5
V
Continuous Drain Current (note 1)
0.8
A
Collector Current-Continuous(Note2)
0.69
A
Collector Current-Pulse(Note3)
1.4
A
IC
ICM
N-MOSFET
ID
IDM
Power Dissipation, Temperature and Thermal Resistance
PD
PowerDissipation
0.7
W
PC
Power Dissipation (Tc=25℃ ,Note1)
2.5
W
RθJA
Thermal Resistance from Junction to Ambient
Tj
Junction Temperature
Tstg
Storage Te mperature
TL
Lead Temperature
178.6
150
℃/W
℃
-55~+150
℃
260
℃
1 A-3Jan6
ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
PNP Transistor
IC=-1mA,IE=0
-32
V(BR)CEO
IC=-10mA,IB=0
-30
V
V(BR)EBO
IE=-100uA,IC=0
-6
V
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown
Emitter-base breakdown voltage
V
Collector cut-off current
ICBO
VCB=-30V,IE=0
-0.1
uA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
uA
DC current gain
40
100
hFE
VCE=-2V,IC=-0.5A
Collecor-emitter saturation voltage
VCE(sat)
IC=-0.5A,IB=-50mA
-0.35
V
Base-emitter saturation voltage
VBE(sat)
IC=-0.5A,IB=-50mA
-1.5
V
Base-emitter voltage
VBE(on)
VCE=-2V,IC=-500mA
-1.1
V
V(BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =16V,VGS = 0V
100
nA
Gate-body leakage current
IGSS
VGS =±5V, VDS = 0V
±1
uA
VGS(th)
VDS =VGS, ID =250µA
N-MOSFET
STATIC PARAMETERS
Drain-source breakdown voltage
Gate threshold voltage (note 3)
Drain-source on-resistance(note 3)
Diode forward voltage (note 3)
RDS(on)
VSD
20
V
1.1
V
VGS =4.5V, ID =0.55A
600
mΩ
VGS =2.5V, ID =0.5A
650
mΩ
VGS =1.8V, ID =0.35A
700
mΩ
1.1
V
IS=0.35A, VGS = 0V
0.44
0.5
DYNAMIC PARAMETERS (note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
61
VDS =10V,VGS =0V,f =100KHz
17
pF
pF
10
pF
33
ns
102
ns
790
ns
439
ns
1.15
nC
0.15
nC
0.23
nC
SWITCHING PARAMETERS (note 4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
tr
td(off)
tf
Total Gate Charge
Qg
Gate-Source Chage
Qgs
Gage-Drain Charge
Qgd
VGEN=4.5V,VDD=10V,
ID=500mA,RGEN=6Ω
RL=10Ω
VDS=10V,VGS=4.5V
ID=0.6A
Notes :
1.Surface mounted on FR4 board using 1 square inch pad size,1oz copper.
2.Surface mounted on FR4 board using the minimum pad size,1oz copper.
3. Pulse test : Pulse width=300μs, duty cycle≤2%.
4. These parameters have no way to verify.
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2
A-3,Jan,2016
Typical Characteristics
N -channel Characteristics
Output Characteristics
5
Ta=25℃
Transfer Characteristics
500
5.5V
VDS=16V
Pulsed
Pulsed
4.5V
4
400
(mA)
ID
3
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
3.5V
2.5V
2
1
300
Ta=100℃
200
Ta=25℃
100
VGS=1.5V
0
0.0
0.5
1.0
1.5
2.0
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
600
2.5
VDS
0
0.0
3.0
(V)
0.5
1.0
1.5
2.0
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
500
——
2.5
VGS
VGS
Ta=25℃
Ta=25℃
Pulsed
Pulsed
VGS=1.8V
300
RDS(ON)
RDS(ON)
400
ON-RESISTANCE
(mΩ)
(mΩ)
500
3.0
(V)
ON-RESISTANCE
VGS=2.5V
VGS=4.5V
200
400
ID=600mA
300
100
0
100
200
200
400
600
DRAIN CURRENT
ID
1
800
IS —— VSD
500
3
4
(V)
5
(V)
0.80
THRESHOLD VOLTAGE
VTH
IS (mA)
VGS
Threshold Voltage
0.85
100
SOURCE CURRENT
2
GATE TO SOURCE VOLTAGE
(mA)
Ta=100℃
10
Pulsed
Ta=25℃
Pulsed
1
0.1
0.0
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
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1.0
0.75
ID=250uA
0.70
0.65
0.60
25
1.2
VSD (V)
50
75
JUNCTION TEMPERATURE
3
100
TJ
125
(℃ )
A-3,Jan,2016
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N3
N4
N1
N6
4
A-3,Jan,2016
DFNWB2X2-6L Tape and Reel
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5
A-3,Jan,2016