JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×2-6L-U Power Management Transistors- MOSFET CJMNT32-W PNP Power Transistor with N-MOSFET V(BR)DSS/VCEO ID/IC RDS(on)MAX DFNWB2×2-6L-U 600mΩ@4.5V 20V 650mΩ@2.5V -30V 700mΩ@1.8V / 0.8A D C -1.5A FEATURE z Ultra low collector-to-emitter saturation voltage z High DC current gain z Small package DFNWB2×2-6L-U APPLICATION z Charging circuit z Other power management in portable equipment Equivalent circuit MARKING C 6 1 E G 5 2 S 4 B 3 D ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit PNP Transistor VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V Collector Current-Continuous(Note1) -1.5 A Collector Current-Continuous(Note2) -0.6 A Collector Current-Pulse(Note3) -4 A VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±5 V Continuous Drain Current (note 1) 0.8 A Collector Current-Continuous(Note2) 0.69 A Collector Current-Pulse(Note3) 1.4 A IC ICM N-MOSFET ID IDM Power Dissipation, Temperature and Thermal Resistance PD PowerDissipation 0.7 W PC Power Dissipation (Tc=25℃ ,Note1) 2.5 W RθJA Thermal Resistance from Junction to Ambient Tj Junction Temperature Tstg Storage Te mperature TL Lead Temperature 178.6 150 ℃/W ℃ -55~+150 ℃ 260 ℃ 1 A-3Jan6 ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit PNP Transistor IC=-1mA,IE=0 -32 V(BR)CEO IC=-10mA,IB=0 -30 V V(BR)EBO IE=-100uA,IC=0 -6 V Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown Emitter-base breakdown voltage V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 uA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 uA DC current gain 40 100 hFE VCE=-2V,IC=-0.5A Collecor-emitter saturation voltage VCE(sat) IC=-0.5A,IB=-50mA -0.35 V Base-emitter saturation voltage VBE(sat) IC=-0.5A,IB=-50mA -1.5 V Base-emitter voltage VBE(on) VCE=-2V,IC=-500mA -1.1 V V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 100 nA Gate-body leakage current IGSS VGS =±5V, VDS = 0V ±1 uA VGS(th) VDS =VGS, ID =250µA N-MOSFET STATIC PARAMETERS Drain-source breakdown voltage Gate threshold voltage (note 3) Drain-source on-resistance(note 3) Diode forward voltage (note 3) RDS(on) VSD 20 V 1.1 V VGS =4.5V, ID =0.55A 600 mΩ VGS =2.5V, ID =0.5A 650 mΩ VGS =1.8V, ID =0.35A 700 mΩ 1.1 V IS=0.35A, VGS = 0V 0.44 0.5 DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 61 VDS =10V,VGS =0V,f =100KHz 17 pF pF 10 pF 33 ns 102 ns 790 ns 439 ns 1.15 nC 0.15 nC 0.23 nC SWITCHING PARAMETERS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) tf Total Gate Charge Qg Gate-Source Chage Qgs Gage-Drain Charge Qgd VGEN=4.5V,VDD=10V, ID=500mA,RGEN=6Ω RL=10Ω VDS=10V,VGS=4.5V ID=0.6A Notes : 1.Surface mounted on FR4 board using 1 square inch pad size,1oz copper. 2.Surface mounted on FR4 board using the minimum pad size,1oz copper. 3. Pulse test : Pulse width=300μs, duty cycle≤2%. 4. These parameters have no way to verify. www.cj-elec.com 2 A-3,Jan,2016 Typical Characteristics N -channel Characteristics Output Characteristics 5 Ta=25℃ Transfer Characteristics 500 5.5V VDS=16V Pulsed Pulsed 4.5V 4 400 (mA) ID 3 DRAIN CURRENT DRAIN CURRENT ID (A) 3.5V 2.5V 2 1 300 Ta=100℃ 200 Ta=25℃ 100 VGS=1.5V 0 0.0 0.5 1.0 1.5 2.0 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 600 2.5 VDS 0 0.0 3.0 (V) 0.5 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE ID RDS(ON) 500 —— 2.5 VGS VGS Ta=25℃ Ta=25℃ Pulsed Pulsed VGS=1.8V 300 RDS(ON) RDS(ON) 400 ON-RESISTANCE (mΩ) (mΩ) 500 3.0 (V) ON-RESISTANCE VGS=2.5V VGS=4.5V 200 400 ID=600mA 300 100 0 100 200 200 400 600 DRAIN CURRENT ID 1 800 IS —— VSD 500 3 4 (V) 5 (V) 0.80 THRESHOLD VOLTAGE VTH IS (mA) VGS Threshold Voltage 0.85 100 SOURCE CURRENT 2 GATE TO SOURCE VOLTAGE (mA) Ta=100℃ 10 Pulsed Ta=25℃ Pulsed 1 0.1 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1.0 0.75 ID=250uA 0.70 0.65 0.60 25 1.2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) A-3,Jan,2016 www.cj-elec.com N3 N4 N1 N6 4 A-3,Jan,2016 DFNWB2X2-6L Tape and Reel www.cj-elec.com 5 A-3,Jan,2016