JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×2-8L-G Plastic-Encapsulate Transistors-MOSFETS CJZM718 N-ch MOSFET and PNP Transistor V(BR)DSS/BVCEO ID/IC RDS(on)MAX DFNWB3×2-8L-G 0.7Ω@4.5V 20V 0.85Ω@2.5V -25V 0.5A -3A / FEATURE APPLICATION Charging circuit High DC current gain Low Threshold Small package DFNWB3x2-8L-G Including a CJP718 transistor and a CJ1012 MOSFET independently in a package Other power management in portable equipments Equivalent Circuit MARKING: front back MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit PNP Transistor VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -7.5 V Collector Current -3 A VDS Drain-Source Voltage 20 V VGS IC N-MOSFET Gate-Source Voltage ±6 V ID Drain Current -Continuous 0.5 A IDM Drain Current - Pulse 2 A 1 W Thermal Resistance from Junction to Ambient (note1) 175 ℃/W Thermal Resistance from Junction to Ambient (note2) 110 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ TL Lead Temperature 260 ℃ Power Dissipation, Temperature and Thermal Resistance PD RθJA www.cj-elec.com Power Dissipation 1 B,May,2015 MOSFET ELECTRICAL CHARACTERISTICS PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO IC=-0.1mA, IE=0 -25 V Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA, IC=0 -7.5 V Collector cut-off current ICBO VCB=-20V, IE=0 -25 nA Emitter cut-off current IEBO VEB=-6V, IC=0 -25 nA IC=-0.1A, IB=-10mA -30 mV IC=-1A, IB=-20mA -220 mV IC=-1.5A, IB=-50mA -250 mV IC=-2.5A, IB=-150mA -350 mV DC current gain Collector-emitter saturation voltage hFE * VCE(sat) * Test conditions Min VCE=-2V, IC=-0.01A 300 VCE=-2V, IC=-0.1A 300 VCE=-2V, IC=-2A 150 VCE=-2V, IC=-6A 15 Typ Max Unit IC=-3.5A, IB=-350mA -380 mV VBE(sat) * IC=-3.5A, IB=-350mA -1.075 V Base-emitter voltage VBE(on) * VCE=-2V, IC=-3.5A -0.95 V Transition frequency fT Base-emitter saturation voltage VCE=-10V, IC=-50mA, f=100MHz 150 MHz N-ch MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=250µA Zero gate voltage drain current IDSS VDS =16V, VGS = 0V 0.1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 1.2 V Drain-source on-resistance RDS(on) VGS =4.5V, ID =0.6A 0.7 Ω VGS =2.5V, ID =0.5A 0.85 Ω Forward tranconductance Diode forward voltage gfs VDS =10V, ID =0.4A VSD * IS=0.15A, VGS = 0V 20 V 0.45 0.5 S 1.2 V DYNAMIC PARAMETERS (note 3) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 100 pF 16 pF Crss 12 pF td(on) 5 ns VDD=10V, VGEN=4.5V, RG=10Ω, 5 ns RL=47Ω, ID=0.2A 25 ns VDS =16V, VGS =0V, f =1MHz SWITCHING PARAMETERS (note 3) Turn-on delay time Turn-on rise time Turn-off delay time tr td(off) tf 11 ns Total Gate Charge Qg 750 nC Gate-Source Charge Qgs 75 nC Gate-Drain Charge Qgd 225 nC Turn-off fall time VDS =10V, VGS =4.5V, ID =0.25A Note: 1. When mounted on a minimum pad. 2. When mounted on 1 in2 of 2oz copper board. 3. These parameters have no way to verify. * Pulse test: pulse width≤300μs, duty cycle≤ 2% www.cj-elec.com 2 B,May,2015 7\SLFDO&KDUDFWHULVWLFV PNP Transistor 3000 -0.30 -810uA (A) VCE= -2V COMMON EMITTER Ta=25℃ -900uA 1000 IC -0.25 DC CURRENT GAIN -630uA -540uA -0.20 o Ta=100 C hFE -720uA COLLECTOR CURRENT IC hFE —— Static Characteristic -0.35 -450uA -0.15 -360uA -270uA -0.10 o Ta=25 C 100 -180uA -0.05 IB=-90uA -0.00 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE 10 -0.01 -6 -0.1 (V) VCE IC —— VBE VBEsat —— IC (A) IC -1.4 -6 -6 -1 COLLECTOR CURRENT β=10 VCE=-2V BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -1.2 COLLECTOR CURRENT IC (A) -1 o -0.1 Ta=100 C o Ta=25 C -1.0 Ta=25℃ -0.8 -0.6 -0.01 Ta=100℃ -0.4 -1E-3 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMITTER VOLTAGE VCEsat —— -1.2 -0.2 -1E-3 -1.4 VBE(V) -0.1 IC -3 VCEsat —— -6 -1 COLLECTOR CURRENT -3 IC (A) IC β=50 -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -0.01 -0.1 β=50 -0.01 β=10 -1 Ta=100℃ -0.1 Ta=25℃ Ta=25℃ -1E-3 -1E-3 -0.01 -0.1 COLLECTOR CURRENT www.cj-elec.com -1 IC -0.01 -1E-3 -6 -0.01 -0.1 COLLECTOR CURRENT (A) 3 -1 IC -6 (A) B,May,2015 7\SLFDO&KDUDFWHULVWLFV PNP Transistor fT 300 —— Cob / Cib IC VCB / VEB —— 1000 o Ta=25 C 250 (pF) Cib C 200 CAPACITANCE TRANSITION FREQUENCY fT (MHz) f=1MHz IE=0 / IC=0 150 100 50 100 Cob VCE=-10V o Ta=25 C 0 -0 -20 -40 -60 COLLECTOR CURRENT Pc COLLECTOR POWER DISSIPATION Pc (W) 1.2 —— -80 IC 10 -0.1 -100 (mA) -1 REVERSE BIAS VOLTAGE -10 V (V) Ta 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 4 B,May,2015 7\SLFDO&KDUDFWHULVWLFV N -channel Characteristics Output Characteristics 5 Ta=25℃ Transfer Characteristics 500 5.5V VDS=16V Pulsed Pulsed 4.5V 4 400 (mA) ID 3 DRAIN CURRENT DRAIN CURRENT ID (A) 3.5V 2.5V 2 1 300 Ta=100℃ 200 Ta=25℃ 100 VGS=1.5V 0 0.0 0.5 1.0 2.0 1.5 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 600 2.5 VDS 0 0.0 3.0 0.5 1.0 (V) 1.5 2.0 GATE TO SOURCE VOLTAGE ID RDS(ON) 500 —— 2.5 VGS 3.0 (V) VGS Ta=25℃ Ta=25℃ Pulsed Pulsed 450 300 RDS(ON) RDS(ON) 400 ON-RESISTANCE (mΩ) (mΩ) 500 200 ON-RESISTANCE VGS=2.5V VGS=4.5V 350 ID=0.6A 300 250 100 0 100 200 200 300 400 500 DRAIN CURRENT 500 400 600 ID 700 0 800 2 4 6 8 GATE TO SOURCE VOLTAGE (mA) IS —— VSD VGS 10 (V) Threshold Voltage 1.00 Ta=25℃ Pulsed 0.95 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (mA) (V) 100 10 1 0.90 ID=250uA 0.85 0.80 0.75 0.1 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1.0 0.70 25 1.2 VSD (V) 50 75 JUNCTION TEMPERATURE 5 100 TJ 125 (℃ ) B,May,2015 DFNWB3X2-8L-G Package Outline Dimensions Symbol Dimensions In Millimeters Max. Min. Dimensions In Inches Min. Max. A A1 A3 D E D1 E1 D2 b e k L 0.700 0.800 0.000 0.050 0.203REF. 2.900 3.100 1.900 2.100 0.300 0.500 0.700 0.900 1.700 1.900 0.250 0.350 0.650TYP. 0.200MIN. 0.224 0.376 0.028 0.031 0.000 0.002 0.008REF. 0.114 0.122 0.075 0.083 0.012 0.020 0.028 0.035 0.067 0.075 0.010 0.014 0.026TYP. 0.008MIN. 0.009 0.015 DFNWB3X2-8L-G www.cj-elec.com 6 B,May,2015 DFNWB3X2-8L Tape and Reel www.cj-elec.com 7 B,May,2015