3f4a19e1c3523efb1af590299693fe43

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-8L-G Plastic-Encapsulate Transistors-MOSFETS
CJZM718
N-ch MOSFET and PNP Transistor
V(BR)DSS/BVCEO
ID/IC
RDS(on)MAX
DFNWB3×2-8L-G
[email protected]
20V
[email protected]
-25V
0.5A -3A
/
FEATURE




APPLICATION
 Charging circuit
High DC current gain
Low Threshold
Small package DFNWB3x2-8L-G
Including a CJP718 transistor and a CJ1012
MOSFET independently in a package
 Other power management in portable equipments
Equivalent Circuit
MARKING:
front
back
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
PNP Transistor
VCBO
Collector-Base Voltage
-25
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-7.5
V
Collector Current
-3
A
VDS
Drain-Source Voltage
20
V
VGS
IC
N-MOSFET
Gate-Source Voltage
±6
V
ID
Drain Current -Continuous
0.5
A
IDM
Drain Current - Pulse
2
A
1
W
Thermal Resistance from Junction to Ambient (note1)
175
℃/W
Thermal Resistance from Junction to Ambient (note2)
110
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
TL
Lead Temperature
260
℃
Power Dissipation, Temperature and Thermal Resistance
PD
RθJA
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Power Dissipation
1
B,May,2015
MOSFET ELECTRICAL CHARACTERISTICS
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
IC=-0.1mA, IE=0
-25
V
Collector-emitter breakdown voltage
*
V(BR)CEO
IC=-10mA, IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.1mA, IC=0
-7.5
V
Collector cut-off current
ICBO
VCB=-20V, IE=0
-25
nA
Emitter cut-off current
IEBO
VEB=-6V, IC=0
-25
nA
IC=-0.1A, IB=-10mA
-30
mV
IC=-1A, IB=-20mA
-220
mV
IC=-1.5A, IB=-50mA
-250
mV
IC=-2.5A, IB=-150mA
-350
mV
DC current gain
Collector-emitter saturation voltage
hFE
*
VCE(sat)
*
Test
conditions
Min
VCE=-2V, IC=-0.01A
300
VCE=-2V, IC=-0.1A
300
VCE=-2V, IC=-2A
150
VCE=-2V, IC=-6A
15
Typ
Max
Unit
IC=-3.5A, IB=-350mA
-380
mV
VBE(sat)
*
IC=-3.5A, IB=-350mA
-1.075
V
Base-emitter voltage
VBE(on)
*
VCE=-2V, IC=-3.5A
-0.95
V
Transition frequency
fT
Base-emitter saturation voltage
VCE=-10V, IC=-50mA, f=100MHz
150
MHz
N-ch MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR)DSS
VGS =0V, ID=250µA
Zero gate voltage drain current
IDSS
VDS =16V, VGS = 0V
0.1
µA
Gate-body leakage current
IGSS
VGS =±4.5V, VDS = 0V
±1
µA
Gate threshold voltage
VGS(th)
VDS =VGS, ID =250µA
1.2
V
Drain-source on-resistance
RDS(on)
VGS =4.5V, ID =0.6A
0.7
Ω
VGS =2.5V, ID =0.5A
0.85
Ω
Forward tranconductance
Diode forward voltage
gfs
VDS =10V, ID =0.4A
VSD *
IS=0.15A, VGS = 0V
20
V
0.45
0.5
S
1.2
V
DYNAMIC PARAMETERS (note 3)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
100
pF
16
pF
Crss
12
pF
td(on)
5
ns
VDD=10V, VGEN=4.5V, RG=10Ω,
5
ns
RL=47Ω, ID=0.2A
25
ns
VDS =16V, VGS =0V, f =1MHz
SWITCHING PARAMETERS (note 3)
Turn-on delay time
Turn-on rise time
Turn-off delay time
tr
td(off)
tf
11
ns
Total Gate Charge
Qg
750
nC
Gate-Source Charge
Qgs
75
nC
Gate-Drain Charge
Qgd
225
nC
Turn-off fall time
VDS =10V, VGS =4.5V,
ID =0.25A
Note:
1. When mounted on a minimum pad.
2. When mounted on 1 in2 of 2oz copper board.
3. These parameters have no way to verify.
* Pulse test: pulse width≤300μs, duty cycle≤ 2%
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2
B,May,2015
7\SLFDO&KDUDFWHULVWLFV
PNP Transistor
3000
-0.30
-810uA
(A)
VCE= -2V
COMMON
EMITTER
Ta=25℃
-900uA
1000
IC
-0.25
DC CURRENT GAIN
-630uA
-540uA
-0.20
o
Ta=100 C
hFE
-720uA
COLLECTOR CURRENT
IC
hFE ——
Static Characteristic
-0.35
-450uA
-0.15
-360uA
-270uA
-0.10
o
Ta=25 C
100
-180uA
-0.05
IB=-90uA
-0.00
-0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE
10
-0.01
-6
-0.1
(V)
VCE
IC —— VBE
VBEsat ——
IC
(A)
IC
-1.4
-6
-6
-1
COLLECTOR CURRENT
β=10
VCE=-2V
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
-1.2
COLLECTOR CURRENT
IC (A)
-1
o
-0.1
Ta=100 C
o
Ta=25 C
-1.0
Ta=25℃
-0.8
-0.6
-0.01
Ta=100℃
-0.4
-1E-3
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
BASE-EMITTER VOLTAGE
VCEsat ——
-1.2
-0.2
-1E-3
-1.4
VBE(V)
-0.1
IC
-3
VCEsat ——
-6
-1
COLLECTOR CURRENT
-3
IC
(A)
IC
β=50
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
-0.01
-0.1
β=50
-0.01
β=10
-1
Ta=100℃
-0.1
Ta=25℃
Ta=25℃
-1E-3
-1E-3
-0.01
-0.1
COLLECTOR CURRENT
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-1
IC
-0.01
-1E-3
-6
-0.01
-0.1
COLLECTOR CURRENT
(A)
3
-1
IC
-6
(A)
B,May,2015
7\SLFDO&KDUDFWHULVWLFV
PNP Transistor
fT
300
——
Cob / Cib
IC
VCB / VEB
——
1000
o
Ta=25 C
250
(pF)
Cib
C
200
CAPACITANCE
TRANSITION FREQUENCY
fT
(MHz)
f=1MHz
IE=0 / IC=0
150
100
50
100
Cob
VCE=-10V
o
Ta=25 C
0
-0
-20
-40
-60
COLLECTOR CURRENT
Pc
COLLECTOR POWER DISSIPATION
Pc (W)
1.2
——
-80
IC
10
-0.1
-100
(mA)
-1
REVERSE BIAS VOLTAGE
-10
V
(V)
Ta
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
150
(℃ )
4
B,May,2015
7\SLFDO&KDUDFWHULVWLFV
N -channel Characteristics
Output Characteristics
5
Ta=25℃
Transfer Characteristics
500
5.5V
VDS=16V
Pulsed
Pulsed
4.5V
4
400
(mA)
ID
3
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
3.5V
2.5V
2
1
300
Ta=100℃
200
Ta=25℃
100
VGS=1.5V
0
0.0
0.5
1.0
2.0
1.5
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
600
2.5
VDS
0
0.0
3.0
0.5
1.0
(V)
1.5
2.0
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
500
——
2.5
VGS
3.0
(V)
VGS
Ta=25℃
Ta=25℃
Pulsed
Pulsed
450
300
RDS(ON)
RDS(ON)
400
ON-RESISTANCE
(mΩ)
(mΩ)
500
200
ON-RESISTANCE
VGS=2.5V
VGS=4.5V
350
ID=0.6A
300
250
100
0
100
200
200
300
400
500
DRAIN CURRENT
500
400
600
ID
700
0
800
2
4
6
8
GATE TO SOURCE VOLTAGE
(mA)
IS —— VSD
VGS
10
(V)
Threshold Voltage
1.00
Ta=25℃
Pulsed
0.95
VTH
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (mA)
(V)
100
10
1
0.90
ID=250uA
0.85
0.80
0.75
0.1
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
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1.0
0.70
25
1.2
VSD (V)
50
75
JUNCTION TEMPERATURE
5
100
TJ
125
(℃ )
B,May,2015
DFNWB3X2-8L-G Package Outline Dimensions
Symbol
Dimensions In Millimeters
Max.
Min.
Dimensions In Inches
Min.
Max.
A
A1
A3
D
E
D1
E1
D2
b
e
k
L
0.700
0.800
0.000
0.050
0.203REF.
2.900
3.100
1.900
2.100
0.300
0.500
0.700
0.900
1.700
1.900
0.250
0.350
0.650TYP.
0.200MIN.
0.224
0.376
0.028
0.031
0.000
0.002
0.008REF.
0.114
0.122
0.075
0.083
0.012
0.020
0.028
0.035
0.067
0.075
0.010
0.014
0.026TYP.
0.008MIN.
0.009
0.015
DFNWB3X2-8L-G
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6
B,May,2015
DFNWB3X2-8L Tape and Reel
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7
B,May,2015