JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is Recommended z This transistor is also available in the SOT-23 case with the type designation MMBT3906 1.EMITTER 2.BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = -10μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V,IE=0 -0.1 μA Collector cut-off current ICEX VCE= -30 V,VBE(off)=-3V -50 nA IEBO VEB= -5 V , -0.1 μA hFE1 VCE=-1 V, IC= -10mA 100 hFE2 VCE=-1 V, IC= -50mA 60 hFE3 VCE=-1 V, IC= -100mA 30 Emitter cut-off current DC current gain IC=0 400 Collector-emitter saturation voltage VCE(sat) IC= -50mA, IB= -5mA -0.4 V Base-emitter saturation voltage VBE(sat) IC= -50mA, IB= -5mA -0.95 V VCE=-20V, IC= -10mA 250 MHz Transition frequency fT Delay Time td VCC=-3V,VBE=-0.5V, 35 ns Rise Time tr IC=-10mA,IB1=-1mA 35 ns Storage Time ts VCC=-3V,Ic=-10mA 225 ns Fall Time tf IB1=IB2=-1mA 75 ns f = 100MHz CLASSIFICATION OF hFE1 Rank Range www.cj-elec.com O Y G 100-200 200-300 300-400 1 D,Dec,2015 Typical Characteristics Static Characteristic (mA) -100 COMMON EMITTER VCE=-1V 300 hFE IC DC CURRENT GAIN -250uA -60 -200uA -150uA -40 -100uA -20 IC Ta=100℃ -300uA COLLECTOR CURRENT —— COMMON EMITTER Ta=25℃ -350uA -80 hFE 1000 -500uA -450uA -400uA Ta=25℃ 100 30 IB=-50uA -0 10 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCEsat -1000 —— VCE -10 -3 -1 (V) -10 IC VBEsat -1200 -100 -30 COLLECTOR CURRENT IC —— -200 (mA) IC BASE-EMMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) β=10 -300 Ta=100℃ -100 Ta=25℃ -30 -1000 Ta=25℃ -800 Ta=100℃ -600 β=10 -10 -400 -1 -10 -3 COLLECTOR CURRENT IC -100 -100 -30 —— IC -1 -200 -3 (mA) -30 -10 COLLECTOR CURRENT VBE Cob/ Cib 10 —— IC (mA) VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ (pF) Ta=100℃ CAPACITANCE -3 Ta=25℃ -1 3 Cob -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 BASE-EMITTER VOLTAGE fT 1000 —— -1.0 VBE 1 -0.1 -1.2 IC COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 300 100 -3 -10 COLLECTOR CURRENT www.cj-elec.com PC 750 -30 IC -10 -3 REVERSE BIAS VOLTAGE COMMON EMITTER VCE=-20V -1 -1 -0.3 (V) fT TRANSITION FREQUENCY Cib C (mA) -10 COLLECTOR CURRENT IC COMMON EMITTER VCE=-5V -30 -200 -100 —— V -20 (V) Ta 625 500 375 250 125 0 -100 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) D,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 D,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 D,Dec,2015